Method for preparing GaN/conductive substrate composite material by magnetron sputtering method and application of GaN/conductive substrate composite material on lithium ion battery

A composite material and magnetron sputtering technology, applied in battery electrodes, secondary batteries, circuits, etc., can solve problems that have not been reported

Inactive Publication Date: 2016-06-01
CHINA THREE GORGES UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, at present, there is no report on i

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  • Method for preparing GaN/conductive substrate composite material by magnetron sputtering method and application of GaN/conductive substrate composite material on lithium ion battery
  • Method for preparing GaN/conductive substrate composite material by magnetron sputtering method and application of GaN/conductive substrate composite material on lithium ion battery
  • Method for preparing GaN/conductive substrate composite material by magnetron sputtering method and application of GaN/conductive substrate composite material on lithium ion battery

Examples

Experimental program
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Example Embodiment

[0019] Example 1

[0020] The GaN target with a purity of 99.99% and the copper foil are respectively placed in the sputtering chamber, the distance between the target and the substrate D=7cm; the cavity is evacuated to V≥1×10 -7 Torr and heat the substrate to 600°C; use magnetron sputtering to bombard the target to deposit and grow GaN on the metal substrate. Reactive gas N 2 Flow rate F=20sccm, working pressure P=100mTorr; sputtering power W=200w, deposition time 120mins. The prepared sample was characterized by SEM, figure 1 It can be seen that the sample is nanoparticles with an average size of about 40nm. The material obtained in Example 1 was made into a button battery according to the following method: the prepared GaN / Cu was cut into a disc with a diameter of 14 mm, and vacuum dried at 120° C. for 12 h. Lithium metal sheet is used as the counter electrode, Celgard membrane is used as the separator, and LiPF is dissolved 6 (1mol / L) EC+DEC (volume ratio 1:1) solution is th...

Example Embodiment

[0021] Example 2

[0022] The GaN target with a purity of 99.99% and the foamed nickel are respectively placed in the sputtering chamber, the distance between the target and the substrate D=7cm; the chamber is evacuated to V≥1×10 -7 Torr and heat the substrate to 600°C; use magnetron sputtering to bombard the target to deposit and grow GaN on the metal substrate. Reactive gas N 2 Flow rate F=20sccm, working pressure P=100mTorr; sputtering power W=200w, deposition time 80mins. The material obtained in Example 2 was prepared into a button battery according to the steps in Example 1 and its electrochemical performance was studied. Such as image 3 As shown, the first charge and discharge capacities of the GaN prepared in Example 2 as the negative electrode of the lithium ion battery are 888 and 980 mAh / g, respectively.

Example Embodiment

[0023] Example 3

[0024] Place the GaN target with a purity of 99.99% and the foamed copper with pre-deposited graphene in the sputtering chamber. The distance between the target and the substrate is D=7cm; the chamber is evacuated to V≥1×10 -7 Torr and heat the substrate to 600°C; use magnetron sputtering to bombard the target to deposit and grow GaN on the metal substrate. Reactive gas N 2 Flow rate F=20sccm, working pressure P=100mTorr; sputtering power W=200w, deposition time 30mins. The material obtained in Example 2 was prepared into a button battery according to the steps in Example 1 and its electrochemical performance was studied. Such as image 3 As shown, the first charge and discharge capacities of the GaN prepared in Example 2 as the negative electrode of a lithium ion battery are 913 and 955 mAh / g, respectively.

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Abstract

The invention relates to a method for preparing a GaN/conductive substrate composite material by a magnetron sputtering method. The composite material is GaN; the specific preparation method comprises the steps of putting a GaN target material with the purity of 99.99% and a metal substrate into a sputtering cavity separately, wherein the distance D from the target material to the substrate is 7cm; performing vacuum pumping to the cavity, wherein V is greater than or equal to 1*10<-7>Torr; heating the substrate, and keeping the temperature at 25-700 DEG C; and performing target material bombardment through magnetron sputtering, and growing GaN on the metal substrate in a depositing manner. The prepared GaN directly grows on the conductive substrate, and is tightly combined with the substrate; the GaN in the prepared sample is uniform nanoparticles with average dimensions of 40nm; and the prepared GaN can be used as a lithium ion battery negative electrode material, and has a relatively high charge-discharge capacity and a relatively low charge-discharge platform.

Description

Technical field [0001] The invention relates to a method for preparing a GaN / conductive matrix composite material by a magnetron sputtering method, which is applied to a lithium ion battery, and belongs to the field of energy storage materials and electrochemical power supplies. technical background [0002] With the increasingly serious energy crisis and environmental pollution, the development and utilization of renewable energy is particularly urgent. However, renewable energy sources such as solar energy, wind energy, and tidal energy have the disadvantages of discontinuity and instability. How to improve the utilization efficiency of these energy sources is particularly important. Lithium-ion battery has significant advantages such as high working voltage, large specific energy, and environmental friendliness, and it is a rational energy storage device. At present, lithium-ion batteries have been widely used in portable electronic devices such as mobile phones and laptop co...

Claims

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Application Information

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IPC IPC(8): H01M4/36H01M4/58H01M4/136H01M4/1397H01M4/04H01M10/0525
CPCH01M4/0426H01M4/136H01M4/1397H01M4/366H01M4/58H01M10/0525H01M2004/027Y02E60/10
Inventor 倪世兵黄鹏
Owner CHINA THREE GORGES UNIV
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