Method for preparing GaN/conductive substrate composite material by magnetron sputtering method and application of GaN/conductive substrate composite material on lithium ion battery

A composite material and magnetron sputtering technology, applied in battery electrodes, secondary batteries, circuits, etc., can solve problems that have not been reported

Inactive Publication Date: 2016-06-01

CHINA THREE GORGES UNIV

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Abstract

The invention relates to a method for preparing a GaN/conductive substrate composite material by a magnetron sputtering method. The composite material is GaN; the specific preparation method comprises the steps of putting a GaN target material with the purity of 99.99% and a metal substrate into a sputtering cavity separately, wherein the distance D from the target material to the substrate is 7cm; performing vacuum pumping to the cavity, wherein V is greater than or equal to 1*10<-7>Torr; heating the substrate, and keeping the temperature at 25-700 DEG C; and performing target material bombardment through magnetron sputtering, and growing GaN on the metal substrate in a depositing manner. The prepared GaN directly grows on the conductive substrate, and is tightly combined with the substrate; the GaN in the prepared sample is uniform nanoparticles with average dimensions of 40nm; and the prepared GaN can be used as a lithium ion battery negative electrode material, and has a relatively high charge-discharge capacity and a relatively low charge-discharge platform.

Application Domain

Negative electrodesSecondary cells +1

Technology Topic

Metal substrateLithium electrode +8

Image

Examples

Experimental program(3)

Example Embodiment

[0019] Example 1

[0020] The GaN target with a purity of 99.99% and the copper foil are respectively placed in the sputtering chamber, the distance between the target and the substrate D=7cm; the cavity is evacuated to V≥1×10 -7 Torr and heat the substrate to 600°C; use magnetron sputtering to bombard the target to deposit and grow GaN on the metal substrate. Reactive gas N 2 Flow rate F=20sccm, working pressure P=100mTorr; sputtering power W=200w, deposition time 120mins. The prepared sample was characterized by SEM, figure 1 It can be seen that the sample is nanoparticles with an average size of about 40nm. The material obtained in Example 1 was made into a button battery according to the following method: the prepared GaN/Cu was cut into a disc with a diameter of 14 mm, and vacuum dried at 120° C. for 12 h. Lithium metal sheet is used as the counter electrode, Celgard membrane is used as the separator, and LiPF is dissolved 6 (1mol/L) EC+DEC (volume ratio 1:1) solution is the electrolyte, assembled into CR2025 battery in a glove box protected by argon. After the battery is assembled, let it stand for 8 hours, and then use the CT2001A battery test system for constant current charge and discharge test, the test voltage is 3 ~ 0.02V. figure 2 It shows that the first charge and discharge capacity of the GaN prepared in Example 1 as the negative electrode of a lithium ion battery are 913 and 1070 mAh/g, the discharge platform is mainly between 0.75V and 0.02V, and the charge platform is mainly between 0.2V and 1.2V.

Example Embodiment

[0021] Example 2

[0022] The GaN target with a purity of 99.99% and the foamed nickel are respectively placed in the sputtering chamber, the distance between the target and the substrate D=7cm; the chamber is evacuated to V≥1×10 -7 Torr and heat the substrate to 600°C; use magnetron sputtering to bombard the target to deposit and grow GaN on the metal substrate. Reactive gas N 2 Flow rate F=20sccm, working pressure P=100mTorr; sputtering power W=200w, deposition time 80mins. The material obtained in Example 2 was prepared into a button battery according to the steps in Example 1 and its electrochemical performance was studied. Such as image 3 As shown, the first charge and discharge capacities of the GaN prepared in Example 2 as the negative electrode of the lithium ion battery are 888 and 980 mAh/g, respectively.

Example Embodiment

[0023] Example 3

[0024] Place the GaN target with a purity of 99.99% and the foamed copper with pre-deposited graphene in the sputtering chamber. The distance between the target and the substrate is D=7cm; the chamber is evacuated to V≥1×10 -7 Torr and heat the substrate to 600°C; use magnetron sputtering to bombard the target to deposit and grow GaN on the metal substrate. Reactive gas N 2 Flow rate F=20sccm, working pressure P=100mTorr; sputtering power W=200w, deposition time 30mins. The material obtained in Example 2 was prepared into a button battery according to the steps in Example 1 and its electrochemical performance was studied. Such as image 3 As shown, the first charge and discharge capacities of the GaN prepared in Example 2 as the negative electrode of a lithium ion battery are 913 and 955 mAh/g, respectively.

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Description & Claims & Application Information

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