Method and device for filling of vertical through hole

Abstract

The invention discloses a method and device for filling of a vertical through hole. The device comprises a metal liquid jetting device and a filling working zone, and is characterized in that a crucible is of a cylindrical structure with the center line as an axis and connected with the upper portion of a cavity through a crucible support connected with a three-dimensional motion controller, and cavity temperature controllers for maintaining the temperature of the cavity are further arranged on the two sides of the middle portion of the cavity; and the filling working zone comprises a substrate used for receiving even liquid drops or stead flow liquid lines jetted out from the metal liquid jetting device and a substrate bearing part used for containing the substrate. The invention further discloses the method for filling of the vertical through hole through the above device. According to the method and device, as the metal liquid jetting device is cooperated with a working table of the filling working zone, uniform liquid drops can be formed, the frequency is controllable, the stead flow liquid lines can also be formed, metallization filling of the vertical through hole is achieved, the size accuracy is high, the porosity is low, the filling efficiency is high, the cost is low, the process is simple, and automatic production can be achieved.

Description

technical field [0001] The invention relates to the technical field of three-dimensional integration of electronic packaging, in particular to a method and device for filling vertical through holes. Background technique [0002] At present, with the continuous pursuit of high frequency, high speed, multi-function, high performance and small size of electronic devices, electronic packaging technology is required to achieve higher integration density and smaller package size. development in three dimensions. One of the core technologies of three-dimensional packaging is Through Silicon Via (TSV) technology, which realizes three-dimensional vertical interconnection between chips or between chips and substrates by forming through holes in the semiconductor substrate that penetrate the upper and lower surfaces and are metallized. To make up for the limitation of two-dimensional wiring of traditional semiconductor chips. This interconnection method has the advantages of high sta...

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Problems solved by technology

The advantage of electroplating hole filling mainly based on electroplating copper is that copper has good conductivity, but the disadvantage is that electroplating requires a good seed layer, long electroplating time and complicated process, and it is difficult to achieve holes with a diameter of less than 5 microns for electroplating filling; the main material is tungsten The chemical vapor deposition of chemical vapor deposition can realize the filling of small pores, but the disadvantages are complex process, long time and high cost; conductive adhesive can simplify the filling process, but the conductivity and thermal stability are very poor, and it is difficult to fill micropores; intermetallic compounds are used Filling is formed by the method of brazing reaction between low-melting-point solder and high-melting-point metal layer. The advantage is to reduce the complexity of the process and the production cost, but the disadvantage is that the required brazing reaction time is long, the production efficiency is low, and the intermetallic compound formed Voids are generated due to volume shrinkage, and it is easy to react with the residual metal layer to form holes in the subsequent service process, which brings uncertain reliability problems; the method of filling the through holes with molten low-melting solder by capillary action is fast , the advantage of low cost, the disadvantage is that it is easy to form voids or underfilling, and it is difficult to fill micropores with large aspect ratio

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