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Ru coating of packaging heat dissipation Mo substrate for power semiconductor and preparing method of Ru coating

A technology for power semiconductors and coatings, which is applied in the field of packaging heat dissipation Mo substrate Ru coatings for power semiconductors and its preparation. It can solve the problems of poor corrosion resistance and low bonding force of the film base, and achieve surface roughness improvement. Effect

Inactive Publication Date: 2016-06-15
江苏时代华宜电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The invention overcomes the disadvantages of the existing electroplating Ru coating, such as low film-base binding force and poor corrosion resistance, has high production efficiency, and has high film-base binding force and excellent corrosion resistance.

Method used

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  • Ru coating of packaging heat dissipation Mo substrate for power semiconductor and preparing method of Ru coating
  • Ru coating of packaging heat dissipation Mo substrate for power semiconductor and preparing method of Ru coating
  • Ru coating of packaging heat dissipation Mo substrate for power semiconductor and preparing method of Ru coating

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preparation example Construction

[0019] The invention provides a Ru coating for encapsulating and heat-dissipating Mo substrates for power semiconductors with higher film-base bonding force and corrosion resistance and a preparation method thereof. The preparation method is: using magnetron sputtering method to deposit Ru coating on the power semiconductor packaging heat dissipation Mo substrate, the Ru target is installed on the sputtering gun; when depositing, the vacuum degree is -4 Pa, start the arc with argon, the distance between the Ru target and the Mo substrate is fixed at 7.8cm, the sputtering pressure is fixed at 0.3Pa, the sputtering time is 120min, the Ru target sputtering power is 120W, obtained by changing the negative bias voltage during the preparation process For Ru thin films with different negative bias voltages, the base negative bias voltage is 0-200V.

[0020] When the negative bias voltage is 100V, the surface roughness of the Ru coating is the lowest, and the film-substrate adhesion an...

Embodiment 1

[0023] The main experimental parameters of this embodiment are Ru target power 120W, negative bias voltage 0V. At this time, the deposition rate of the coating is about 12nm / min, which is composed of hexagonal Ru phase. The average grain size of the coating is 26nm, the surface roughness is 0.932nm, the film-substrate binding force is 10.3N, and the pitting potential in 3.5% NaCl solution is 0.2235V.

Embodiment 2

[0025] The main experimental parameters of this embodiment are Ru target power 120W and negative bias voltage 100V. At this time, the deposition rate of the coating is about 10nm / min, which is composed of hexagonal Ru phase. The average grain size of the coating is 20nm, the surface roughness of the coating is 0.639nm, the film-substrate binding force is 14.1N, and the pitting potential in 3.5% NaCl solution is 0.7438V.

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Abstract

The invention discloses a Ru coating of a packaging heat dissipation Mo substrate for a power semiconductor and a preparing method of the Ru coating. The Ru coating is deposited on the packaging heat dissipation Mo substrate for the power semiconductor through a magnetron sputtering method; during deposition, the vacuum degree is superior to 6.0*10<-4> Pa, arcing is conducted through argon, the sputtering pressure is fixed to be 0.3 Pa, the sputtering time is 120 min, and the Ru target power is 120 W; and Ru films different in negative bias are obtained by changing negative biases in the preparing process. The Ru coating prepared through the method has the beneficial effects of being small in grain size, high in density, few in defect, high in film-substrate bonding force, excellent in corrosion resistance and the like. The lowest surface roughness of the Ru coating is 0.639 nm, the maximum film-substrate bonding force is 14.1 N, and the highest corrosive pitting potential difference is 0.7438 V.

Description

technical field [0001] The invention belongs to the technical field of corrosion-resistant coatings, and relates to a coating and a preparation method thereof, in particular to a Ru coating for encapsulating heat-dissipating Mo substrates for power semiconductors with relatively high film-base bonding force and corrosion resistance and its preparation. method. Background technique [0002] Power semiconductor devices are the core converter components for power generation, power distribution, power transmission, power consumption, and energy storage. They can accurately and efficiently control and transform current, voltage, power, and frequency, and are used for power distribution, power conversion, and power control. Play the role of energy saving and environmental protection, widely used in iron and steel smelting, motor drive, high-power power supply, power transmission and distribution, rail transit, machinery manufacturing, electric welding machine, chemical industry, n...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/16
CPCC23C14/35C23C14/165
Inventor 陈敏郭丽萍许俊华
Owner 江苏时代华宜电子科技有限公司