High-permittivity microwave dielectric ceramic material and preparation method thereof

A microwave dielectric ceramic and high-dielectric technology, which is applied in the field of high-dielectric Ca-Li-Nd-Ti-based microwave dielectric ceramic materials and its preparation, can solve the problems of restricting large-scale applications and the frequency temperature coefficient cannot meet actual needs, and achieve The effect of performance improvement, reduction of resonant frequency temperature coefficient, and stable performance

Inactive Publication Date: 2016-06-22
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, Ca 0.35 Li 0.25 Nd 0.35 TiO 3 The quality factor is small and the frequency temperature coefficient is large, which cannot meet the actual needs
More importantly, the above CaO-Li 2 O-Ln 2 o 3 -TiO 2 Both systems need to press samples under isostatic pressing conditions, which also limits their large-scale application in the modern electronics industry

Method used

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  • High-permittivity microwave dielectric ceramic material and preparation method thereof
  • High-permittivity microwave dielectric ceramic material and preparation method thereof
  • High-permittivity microwave dielectric ceramic material and preparation method thereof

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Embodiment

[0035] A high dielectric and low loss microwave dielectric ceramic material substituted by a B position, the general chemical formula is (Ca 0.35 Li 0.25 Nd 0.35 )(Ti 1-x D. x )O 3 , where 0.01≤x≤0.05, the composition of D is VW, V represents Ta with a valence state higher than tetravalent, W represents a valence state lower than tetravalent and the average ionic radius is close to Ti 4+ Single or multiple elements of V and W are substituted simultaneously or individually. When substituted alone, W is one of Al, Ga, Mg, Zn, Ni, or D is directly Ta. When VW is substituted at the same time, if W is one of Al and Ga, then the molar ratio V:W=1:1, if W is one of Mg, Zn, Ni, then the molar ratio V:W= 2:1.

[0036] The crystal phase of the microwave dielectric ceramic material is an orthorhombic perovskite structure. The relative permittivity ε of the microwave dielectric ceramic material r Between 120 and 140, the Q×f value is between 2700 and 4000GHz, and the resonant fre...

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Abstract

The invention provides a high-permittivity microwave dielectric ceramic material. The material has the material chemical formula (Ca0.35Li0.25Nd0.35)(Ti1-xDx)O3, wherein x is larger than or equal to 0.01 and smaller than or equal to 0.05, the composition of D is VW, V represents Ta with the valence state higher than 4, W represents one or more elements with the valence state lower than four and the average ion radius close to Ti4+, and V and W can be substituted at the same time or independently. The invention further provides a preparation method of the high-permittivity microwave dielectric ceramic material. The method includes the steps of material mixing, ball grinding, drying, screening, pre-sintering, granulating, compression molding forming and sintering. The prepared material has a high dielectric constant, a high Q*f value and an adjustable frequency and temperature coefficient. Volatile toxic metal such as Pb and Cd is not contained in the formula, performance is stable, application requirements of modern microwave devices can be met, the raw materials can be sufficiently supplied in China, the price is relatively low, and low cost of high-performance microwave ceramic is made possible.

Description

technical field [0001] The invention belongs to the technical field of electronic information functional materials and devices, and specifically relates to a high-dielectric Ca-Li-Nd-Ti-based microwave dielectric ceramic material with adjustable frequency temperature coefficient and a preparation method thereof, which can be used for making modern mobile communication and Microwave components such as dielectric resonators, dielectric filters, dielectric substrates, and dielectric antennas in Internet of Things technology. Background technique [0002] At present, information technology is developing rapidly in the direction of high frequency, high power, integration, and multi-function, and with the rapid development of modern mobile communication technology and Internet of Things technology, high-frequency microwave There are extensive and important applications in systems such as sensing Internet of Things radio frequency technology. Among them, radio frequency identifica...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/46C04B35/622C04B35/64
CPCC04B35/46C04B35/622C04B35/64C04B2235/3203C04B2235/3208C04B2235/3217C04B2235/3231C04B2235/3251C04B2235/3286C04B2235/725
Inventor 唐斌方梓烜孙成礼钟朝位张树人
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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