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Preparation method of organic electroluminescence device

An electroluminescence device and luminescence technology, which is applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of sunlight loss, device luminous efficiency reduction, high light absorption rate, etc.

Active Publication Date: 2016-06-29
湖州佳灏信息技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In traditional light-emitting devices, the material of the hole injection layer is usually metal oxide (such as molybdenum oxide), but at this time the material selection range of the hole injection layer is narrow, and at the same time, the metal oxide has a high absorbance in the visible light range. , resulting in loss of sunlight, and the metal oxide is an inorganic substance, which is quite different from the organic material of the hole transport layer. The compatibility between the two is poor on the contact interface. Hole loss and device luminous efficiency reduction

Method used

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  • Preparation method of organic electroluminescence device
  • Preparation method of organic electroluminescence device
  • Preparation method of organic electroluminescence device

Examples

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Effect test

Embodiment 1

[0065] An organic electroluminescent device, the preparation method comprising the following steps:

[0066] (1) First, the size is 2 × 2cm 2 The ITO glass was cleaned by ultrasonic cleaning with detergent and deionized water for 15min in turn to remove organic pollutants on the surface. The thickness of the ITO layer of the ITO glass was 180nm;

[0067] The hole injection layer was prepared by spin coating on the ITO glass, and the specific operation was as follows: according to Re 2 O 7 : AIBA: ZnO: polytetrafluoroethylene (PTFE): water in a weight ratio of 30: 15: 1: 2: 100, the Re 2 O 7 , AIBA, ZnO, and polytetrafluoroethylene (PTFE) are added to water and mixed evenly to obtain a mixture. The particle size of ZnO is 50 nm, and the polytetrafluoroethylene (PTFE) is a DuPont product, model TE3885; on ITO glass at 4000 rpm The mixture was spin-coated at a rate of 10 s, and then dried at 100° C. for 25 min to obtain a hole injection layer with a thickness of 80 nm;

[00...

Embodiment 2

[0078] An organic electroluminescent device, the preparation method comprising the following steps:

[0079] (1) First, the size is 2 × 2cm 2 The AZO glass was cleaned with detergent and deionized water by ultrasonic cleaning for 15min in turn to remove organic pollutants on the surface. The thickness of the AZO layer of the AZO glass was 80nm;

[0080] The hole injection layer was prepared by spin coating on AZO glass. The specific operation was as follows: according to ReO 2 : AIBI: ZnO: polytetrafluoroethylene (PTFE): ethanol in a weight ratio of 10: 2: 0.5: 0.5: 100, the ReO 2 , AIBI, ZnO and polytetrafluoroethylene (PTFE) are added to ethanol and mixed uniformly to obtain a mixture, the particle size of ZnO is 20nm, and the polytetrafluoroethylene (PTFE) is a DuPont product, model TE3885; on AZO glass at 500rpm The mixture was spin-coated at a speed of 5 s, and then dried at 200 °C for 10 min to obtain a hole injection layer with a thickness of 100 nm;

[0081] (2) The...

Embodiment 3

[0090] An organic electroluminescent device, the preparation method comprising the following steps:

[0091] (1) First, the size is 2 × 2cm 2 The IZO glass was cleaned by ultrasonic cleaning with detergent and deionized water for 15min in turn to remove organic pollutants on the surface. The thickness of the IZO layer of the IZO glass was 100nm;

[0092] The hole injection layer was prepared by spin coating on the IZO glass. The specific operation was as follows: according to Re 2 O 3 The weight ratio of: V30: ZnO: polytetrafluoroethylene (PTFE): isopropanol is 60: 20: 10: 5: 100, the Re 2 O 3 , V30, ZnO and polytetrafluoroethylene (PTFE) are added to isopropanol and mixed evenly to obtain a mixture, the particle size of ZnO is 200nm, and the polytetrafluoroethylene (PTFE) is a DuPont product, the model is TE3885;

[0093] The mixture was spin-coated at a speed of 6000 rpm on IZO glass for 30 s, and then dried at 50° C. for 30 min to obtain a hole injection layer with a th...

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Abstract

The invention provides a preparation method of an organic electroluminescence device. The method is characterized by comprising the following operation steps: cleaning a conductive anode substrate, and carrying out spin coating on the conductive anode substrate to prepare a hole injection layer. The specific preparation method comprises the following steps: adding a rhenium oxide, azo materials, a zinc oxide and polytetrafluoroethylene to a solvent, mixing the rhenium oxide, the azo materials, the zinc oxide and the polytetrafluoroethylene evenly to obtain a mixture; carrying out spin coating of the mixture on the conductive anode substrate and drying the mixture at 50-200 DEG C for 10-30 minutes to obtain a hole injection layer, wherein the hole injection layer has a nano network structure and the aperture of the nano network structure is 100-150nm; and sequentially preparing a hole transport layer, a luminous layer, an electron transport layer, an electron injection layer and a cathode on the hole injection layer through evaporation, thereby obtaining the organic electroluminescence device.

Description

technical field [0001] The invention relates to the field of organic electroluminescence, in particular to an organic electroluminescence device and a preparation method thereof. Background technique [0002] In 1987, C.W.Tang and Van Slyke of EastmanKodak Company in the United States reported a breakthrough in organic electroluminescence research, using ultra-thin film technology to prepare high-brightness, high-efficiency double-layer organic electroluminescence devices (OLED). In this two-layer device, the brightness reaches 1000cd / m at 10V 2 , its luminous efficiency is 1.51lm / W, and its lifespan is greater than 100 hours. [0003] The light-emitting principle of OLED is based on the fact that under the action of an external electric field, electrons are injected from the cathode to the lowest unoccupied molecular orbital (LUMO) of the organic matter, while holes are injected from the anode to the highest occupied orbital (HOMO) of the organic matter. The light-emittin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56H01L51/50
CPCH10K50/17H10K71/00
Inventor 不公告发明人
Owner 湖州佳灏信息技术有限公司
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