A manufacturing process for eliminating crystal defects of aluminum electrodes

Abstract

The invention relates to a manufacturing process for eliminating crystal defects of an aluminum electrode, comprising forming an oxide layer on the surface of the aluminum electrode; covering a cover layer on the surface of the aluminum electrode, and the cover layer is covered on the oxide layer, Wherein the masking layer is preset with an opening in the desired pattern shape; exposing the aluminum electrode covered with the masking layer to decompose the part of the oxide layer exposed from the opening until the desired pattern is exposed Shaped aluminum electrodes, and remove the cover layer; the first active gas is plasma-treated, and passed through the openings to the surface of the aluminum electrodes with preset pattern shapes to form a moisture-proof protective layer. A manufacturing process for eliminating crystal defects of aluminum electrodes in the present invention uses light to decompose oxides on the surface of aluminum electrodes, avoids the introduction of high molecular compounds containing fluorine elements, and then eliminates the formation of crystal defects from the source, and improves the quality of aluminum electrodes. quality, optimizing the manufacturing process of aluminum electrodes in the prior art.

Description

technical field [0001] The invention relates to the technical field of aluminum electrode manufacturing technology, in particular to a manufacturing technology for eliminating crystal defects of aluminum electrodes. Background technique [0002] In the prior art, in the dry etching passivation process of the aluminum electrode, a dielectric layer is basically grown on the aluminum electrode, and then an opening of a specific shape is etched on the surface of the aluminum electrode by dry etching, and exposed aluminum electrodes. Since the polymer compound containing fluorine element remains on the aluminum electrode during the dry etching process, it is still impossible to avoid the corrosion of the aluminum electrode by the residual fluorine in the overtime environment, resulting in the formation of crystal defects. Contents of the invention [0003] The technical problem to be solved by the present invention is to aim at the deficiencies of the above-mentioned prior art...

AI Technical Summary

Problems solved by technology

Since the polymer compound containing fluorine element remains on the aluminum electrode during the dry etching process, it is impossible to avoid the corrosion of the aluminum electrode by the residual fluorine in the overtime environment, resulting in the formation of crystal defects.

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