Method for preparing nitrogen-doped graphene quantum point by using reflux process

A graphene quantum dot and nitrogen doping technology is applied to the preparation of nitrogen-doped graphene quantum dots, and a simple reflow process is used to prepare nitrogen-doped graphene quantum dots. High cost and other problems, to achieve the effect of simple preparation process, good application prospect and good water solubility

Inactive Publication Date: 2016-08-03
YUNNAN NORMAL UNIV
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Problems solved by technology

However, at present, there are still a series of technical problems in the mass production of graphene quantum dots, such as high cost, cumbersome process, and low yield.

Method used

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  • Method for preparing nitrogen-doped graphene quantum point by using reflux process
  • Method for preparing nitrogen-doped graphene quantum point by using reflux process
  • Method for preparing nitrogen-doped graphene quantum point by using reflux process

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Embodiment Construction

[0018] Add 0.8 grams of acetylene black, 70 milliliters of deionized water, and 28 milliliters of concentrated nitric acid (68% by weight) to the three-necked round-bottomed flask in sequence, so that the volume of the reaction solution is about 100 milliliters, and the reaction solution is mixed evenly. Install the backflow device to ensure that the interface is tight and the whole device is stable. Set the temperature of the heating mantle to 90°C, heat the reaction solution to a slight boil and keep it for 3-20 hours, and when the color of the solution starts to change, it means that graphene quantum dots are formed. After the reaction, the reaction liquid was cooled to room temperature, and the pH value of the reaction liquid was adjusted to neutral with sodium hydroxide solution. The reaction solution was filtered, and the filtered solution was dialyzed in deionized water for 10 minutes (dialysis bag cut-off molecular weight: 1000), and nitrogen-doped graphene quantum dot...

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Abstract

The invention provides a method for preparing a nitrogen-doped graphene quantum point by using a reflux process. The method comprises the following steps: 1) adding acetylene black, concentrated nitric acid and deionized water in a certain ration into a reflux device, setting the temperature of a heating sleeve to be 90 to 100 DEG C and allowing a reaction solution to maintain slightly boiling for 3 to 20 h; and 2) after completion of a reflux reaction, cooling the reaction solution to room temperature, adjusting the pH value of the reaction solution with a sodium hydroxide solution until the reaction solution is neutral, carrying out separation and purification with a dialysis bag in deionized water and collecting the nitrogen-doped graphene quantum point. The method provided by the invention can easily prepare the nitrogen-doped graphene quantum point, is low in economic cost and simple in preparation technology and can realize preparation and doping of the graphene quantum point at the same time.

Description

technical field [0001] The invention relates to a method for preparing nitrogen-doped graphene quantum dots, in particular to a method for preparing nitrogen-doped graphene quantum dots using acetylene black and concentrated nitric acid as raw materials, using an efficient and simple reflux process, which belongs to the preparation of nanomaterials technology field. Background technique [0002] In recent years, graphene quantum dots, as a new type of carbon material, have attracted extensive research interest due to their unique properties. Compared with graphene, graphene quantum dots have stronger quantum confinement effects and boundary effects. In addition, graphene quantum dots also have non-toxicity, good water solubility, stable photoluminescent properties, and good biophase properties. Capacitance, high mobility, adjustable bandgap and other properties make it have good application prospects in optoelectronic devices, sensors, and biological imaging. [0003] The ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/65C01B31/04
Inventor 李学铭唐利斌施光辉胡志华
Owner YUNNAN NORMAL UNIV
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