Supercharge Your Innovation With Domain-Expert AI Agents!

A metal oxide gas-sensing base material and its preparation method

A technology for sensing substrates and oxides, which is used in the analysis of materials, material analysis by electromagnetic means, instruments, etc. It can solve the problems of high working temperature, poor selectivity, baseline resistance drift, etc., and achieve good stability.

Active Publication Date: 2018-11-20
泰州市龙泽环境科技有限公司
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, nano-metal oxide gas sensors have attracted extensive attention due to their advantages of low power consumption and high performance, but they also have different disadvantages, such as poor selectivity, high operating temperature, slow response recovery rate, and baseline resistance drift. and other shortcomings

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] A metal oxide gas-sensing base material, prepared from the following components in parts by weight: 5 parts of iron powder, 5 parts of tellurium powder, 1 part of nano-silicon dioxide, 10 parts of silicon wafer, N,N-dimethyl 20 parts of methyl formamide, 20 parts of hydrofluoric acid, 0.1 part of butyl hydroxyanisole, 1 part of calcium oxide, 1 part of sodium hydroxide, 20 parts of absolute ethanol, 15 parts of sulfuric acid, 5 parts of hydrogen peroxide, 20 parts of acetone , 30 parts of deionized water.

[0022] The preparation method of the above-mentioned metal oxide gas-sensitive sensing matrix material is as follows: first mix sulfuric acid and hydrogen peroxide evenly, put the silicon chip into it and ultrasonically clean it for 30 minutes; mix and dissolve sodium hydroxide with 20 parts of deionized water, and Put the silicon wafer in it for ultrasonic cleaning for 5 minutes; mix 10 parts of hydrofluoric acid and the remaining deionized water, put the silicon wa...

Embodiment 2

[0024] A metal oxide gas-sensing base material, which is prepared from the following components in parts by weight: 6 parts of iron powder, 6 parts of tellurium powder, 1.2 parts of nano-silicon dioxide, 12 parts of silicon wafer, N,N-dimethyl 22 parts of methyl formamide, 22 parts of hydrofluoric acid, 0.15 parts of butylated hydroxyanisole, 1.3 parts of calcium oxide, 1.2 parts of sodium hydroxide, 22 parts of absolute ethanol, 20 parts of sulfuric acid, 6 parts of hydrogen peroxide, and 22 parts of acetone , 35 parts of deionized water.

[0025] The preparation method of the above-mentioned metal oxide gas-sensitive sensing base material is as follows: first mix sulfuric acid and hydrogen peroxide evenly, put the silicon chip into it and ultrasonically clean it for 35 minutes; mix and dissolve sodium hydroxide with 20 parts of deionized water, and Put the silicon wafer in it for ultrasonic cleaning for 6 minutes; mix 15 parts of hydrofluoric acid and the remaining deionized...

Embodiment 3

[0027] A metal oxide gas-sensing substrate material, prepared from the following components in parts by weight: 7.5 parts of iron powder, 7.5 parts of tellurium powder, 1.5 parts of nano-silicon dioxide, 15 parts of silicon wafer, N,N-dimethyl 25 parts of methyl formamide, 25 parts of hydrofluoric acid, 0.2 parts of butylated hydroxyanisole, 1.5 parts of calcium oxide, 1.5 parts of sodium hydroxide, 25 parts of absolute ethanol, 22 parts of sulfuric acid, 7.5 parts of hydrogen peroxide, and 25 parts of acetone , 40 parts of deionized water.

[0028] The preparation method of the above-mentioned metal oxide gas-sensitive sensing base material is as follows: first mix sulfuric acid and hydrogen peroxide evenly, put the silicon chip into it and ultrasonically clean it for 35 minutes; mix and dissolve sodium hydroxide with 20 parts of deionized water, and Put the silicon wafer in it for ultrasonic cleaning for 7.5 minutes; mix 15 parts of hydrofluoric acid and the remaining deioni...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
porosityaaaaaaaaaa
Login to View More

Abstract

The invention provides a metal oxide gas-sensitive sensing substrate material and a preparation method thereof. The metal oxide gas-sensitive sensing substrate material is prepared by the following steps: firstly, mixing sulfuric acid and hydrogen peroxide evenly, and carrying out ultrasonic cleaning of a silicon slice; mixing sodium hydroxide and deionized water and dissolving, and carrying out ultrasonic cleaning of the silicon slice; mixing hydrofluoric acid and deionized water evenly, and carrying out ultrasonic cleaning of the silicon slice; putting the silicon slice into acetone, and carrying out ultrasonic cleaning; then putting the silicon slice into absolute ethyl alcohol, and carrying out ultrasonic cleaning; next mixing hydrofluoric acid and N,N-dimethylformamide evenly, pouring the mixture into a corrosion tank, inserting the silicon slice into the corrosion tank, and corroding; and finally mixing and dispersing an iron powder, a tellurium powder, nano silica, butylated hydroxyanisole and calcium oxide evenly, flatly laying the mixture in a crucible, inserting two ceramic slices with the height of 2 mm, placing the porous silicon slice on the ceramic slices, sealing the crucible, putting the crucible into a muffle furnace, and calcining. The sensitivity of the metal oxide gas-sensitive sensing substrate material is increased along with increase of the gas concentration; and the sensitivity is high, and the reutilization stability is good.

Description

technical field [0001] The invention relates to the field of materials, in particular to a metal oxide gas-sensing sensing matrix material and a preparation method thereof. Background technique [0002] With the rapid development of the economy, people's living standards have also been greatly improved. At the same time, our living environment has also been seriously damaged, especially our atmospheric environment. Toxic and harmful gases are constantly being emitted. Nitrogen Oxide is one of the more serious ones. It can cause respiratory diseases in humans, aggravate conditions such as asthma and heart disease, and even cause death. Therefore, in order to effectively detect the gas environment in which we live, it is necessary to research and develop a gas sensor that can detect nitrogen oxides effectively and in time. A gas sensor is a device or device that can convert the measured gas concentration and composition into an available output signal according to certain ru...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/00
CPCG01N27/00
Inventor 姚振红
Owner 泰州市龙泽环境科技有限公司
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com