Ion source with evaporator

Abstract

The invention relates to an ion source with an evaporator; the ion source may have the evaporator, and uses the following one or more modes to reduce temperature difference in the evaporator; firstly, at least one heat insulator is arranged by partial a container and far away from a special heat source, wherein the container of the evaporator is heated by the special heat source; secondly, at least one heat insulator is arranged around the heater, wherein the container is arranged in the evaporator and heated by the heater; thirdly, at least one radiation shield is arranged so as to allow heat energy the pass the housing and a channel unit, wherein an arc chamber is connected with the housing through the channel unit in a machinery manner. The heat insulator can reduce heat energy loss, and the temperature difference in the evaporator is reduced; in addition, a hollow diffuser with a plurality of open pores is used for adding conductivity and reducing evaporated material condensation.

Description

technical field [0001] The present invention relates to an ion source, and more particularly to an ion source having a vaporizer that uses thermal insulators to reduce heat loss and / or uses a radiation shield with high thermal conductivity to conduct heat, Allows for more uniform temperature distribution within the evaporator, also particularly pertaining to an ion source having an evaporator that uses a hollow diffuser with a plurality of openings to convey evaporated material from a container within the evaporator to arc chamber. Background technique [0002] Ion implantation is a necessary but expensive process for modern device manufacturing technologies, such as semiconductor device manufacturing or flat panel manufacturing technology. Ion implantation is primarily used to dope-introduce chemically active species into a workpiece of semiconductor material, such as typically silicon. In most cases there is no other process that can replace ion implantation. There is a...

AI Technical Summary

Problems solved by technology

[0011] Second, due to practical operational constraints, the temperature of the arc chamber may fluctuate even though the plasma temperature within the arc chamber 16 is not dynamically adjusted to provide ions with different energies / density

Therefore, the thermal energy transferred from the arc chamber 16 to the container 12 is inevitably unstable.

In addition, the heat provided by the heater 14 may also be unstable or uneven due to practical operating constraints.

Therefore, the material evaporation process in the evaporator 10 and the flow rate of the evaporated material from the evaporator 10 to the arc chamber 16 are often unstable, which inevitably affects the plasma in the arc chamber 16.

[0012] Third, evaporated material may condense on the transport path from container 12 to arc chamber 16 because both ends of channel member 13 may be indirectly heated by a heat source, such as arc chamber 16 and heater 14.

[0013] Fourth, the heat dissipated from the container 12 is usually uneven, and even somewhat uncontrollable, because of the limitations of the actual structure of the container 12, the shell 11 and other parts of the evaporator 10

Therefore, not only the evaporation rate of the material in the container 12 decreases due to heat dissipation, but also the evaporation rate of the material in the container 12 is not uniform.

Therefore, the function of the evaporator 10 is attenuated due to the actual heat dissipation

[0014] Fifth, the distribution of the material to be evaporated in the container 12 may also be uneven, especially the relative geometric relationship between the distribution of the stored material and the channel element 13

Therefore, the production of evaporated material in the gaseous state may also be non-uniform

[0015] Sixth, the use of an evaporator inevitably increases the cost and complexity of the ion source, especially when some parts of the evaporator can also be replaced when using different materials

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