Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Pressure sensing imaging array, device and method of making the same

An imaging array and sensing technology, applied in the measurement of the property force of piezoelectric devices, and the measurement of force by measuring the change of optical properties of materials when they are stressed, can solve the problem of large number of pixels, complex electrode layout, device Problems such as large self-heating, to achieve the effect of simplifying device processing steps, improving stability and reliability, and reducing manufacturing costs

Active Publication Date: 2019-12-10
BEIJING INST OF NANOENERGY & NANOSYST
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention aims to realize a large-area, high-resolution, real-time dynamic pressure sensing array, and overcome the problems of complex electrode layout, large number of pixels, and large self-heating of devices.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Pressure sensing imaging array, device and method of making the same
  • Pressure sensing imaging array, device and method of making the same
  • Pressure sensing imaging array, device and method of making the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0068] This embodiment is a multi-quantum well type pressure sensing imaging array and a manufacturing method thereof. Follow the steps below in sequence:

[0069] S1. On the double-polished (0001) surface sapphire substrate, the n-type GaN conductive layer and 5 In 0.18 Ga 0.82 The N / GaN quantum well light absorption layer and the p-type GaN conductive layer are prepared to obtain a GaN-based photoinduced blue light material substrate.

[0070] S2. Using ultraviolet lithography means to make a dot matrix pattern on the GaN-based photo-induced blue light material substrate, the density of which is 1×10 5 mm -2 .

[0071] S3. Depositing a Ni metal thin film on the GaN-based photoluminescent blue light material substrate with a lattice pattern, and then performing a metal lift-off treatment to obtain a large-area and ordered Ni metal lattice array.

[0072] S4. Using the Ni metal lattice array as a mask layer, perform top-down dry etching on the GaN-based photoluminescent m...

Embodiment 2

[0077] This embodiment is a heterojunction pressure sensing imaging array and a manufacturing method thereof. Follow the steps below in sequence:

[0078] S1. Sequential epitaxial growth of n-type Al on double-polished (0001) sapphire substrates 0.6 Ga 0.4 N conductive layer, GaN light absorbing layer and p-type Al 0.1 Ga 0.9 An N conductive layer is prepared to obtain a GaN-based photoinduced ultraviolet light material substrate.

[0079] S2. Using ultraviolet lithography means to make dot matrix patterns on the GaN-based photoinduced ultraviolet material substrate, the density of which is 1×10 3mm -2 .

[0080] S3. Depositing a Ni metal thin film on the GaN-based photo-ultraviolet material substrate with a lattice pattern, and then performing a metal lift-off treatment to obtain a large-area and ordered Ni metal lattice array.

[0081] S4. Using the Ni metal lattice array as a mask layer, dry-etch the GaN-based photo-ultraviolet material substrate from top to bottom, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a pressure sensing imaging array adopting an all-optical mode and based on photoluminescence principles, a device and a manufacturing method of the pressure sensing imaging array and the device. The pressure sensing imaging array comprises a substrate (L1) and a cylindrical light-emitting array formed thereon. The cylindrical light-emitting array is formed by a plurality of cylindrical light-emitting units distributed in order. Each cylindrical light-emitting unit comprises a lower conductive layer (L2), a light absorption layer (L3) and an upper conductive layer (L4) which are stacked from bottom to top. The band gap energy of the light absorption layer (L3) is less than that of the lower conductive layer (L2), so that the light absorption layer (L3) can absorb photons of externally incident stimulating light from one side of the substrate (L1). The device also comprises a stimulating light source (D1) and an imaging sensing element (D3). The pressure sensing imaging array avoids the device self-heating problem and pixel number limitation, and can achieve large-area, high-resolution and real-time dynamic pressure sensing imaging. Meanwhile, the manufacturing method is simple and easy and is low in cost.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronics, in particular to a pressure sensing imaging array, equipment and a manufacturing method thereof, aiming at real-time sensing and precise positioning of the size and spatial distribution of pressure or deformation by using light-emitting array imaging. Background technique [0002] With the continuous development of artificial intelligence and sensing technology, the demand for perception of human and external environment is becoming stronger and stronger. It is very important to establish a good interaction and intelligent sensing between the two. In human perception, bionic research on touch is still immature, and the demand for it is increasingly urgent. The main forms of existing pressure / tactile sensors are piezoresistive, capacitive, and piezoelectric, etc. Most of them convert pressure / tactile signals into electrical signals (such as changes in physical quantities such as resist...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01L1/16G01L1/24
Inventor 翟俊宜彭铭曾
Owner BEIJING INST OF NANOENERGY & NANOSYST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com