Low-temperature sintering thick film paste applied to PI films and preparation method of low-temperature sintering thick film paste

A low-temperature sintering and thick-film slurry technology, which is applied in the direction of conductive materials dispersed in non-conductive inorganic materials, cable/conductor manufacturing, electrical components, etc., can solve the problems of short sintering time, good solderability, low sintering temperature, etc. problems, no cracks and pinholes, short sintering time, and high heating intensity

Inactive Publication Date: 2016-08-17
DONGGUAN COREHELM ELECTRONICS MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] There are various circuit paste products in the prior art; however, for the existing circuit paste products, it is difficult to have

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Embodiment 1, a low-temperature sintered thick film slurry applied to PI film, including the following materials by weight, specifically:

[0041] Binder phase 20%

[0042] Organic Vehicle 25%

[0043] Lanthanum oxide or yttrium oxide 5%

[0044] High-purity nano-silver powder 60%;

[0045] Among them, the binder phase is low-temperature sintered glass powder, the particle size of low-temperature sintered glass powder is 500 nm-800 nm, the melting temperature of low-temperature sintered glass powder is less than 400 ° C, and the low-temperature sintered glass powder is composed of Bi 2 o 3 , SiO 2 、Al 2 o 3 Composed of three materials, Bi in the low-temperature sintered glass powder 2 o 3 , SiO 2 、Al 2 o 3 The weight parts of three kinds of materials are successively 25%, 50%, 25%;

[0046] The organic vehicle consists of a solvent mixture, a thickener, a thixotropic agent, and a defoamer. The parts by weight of the four materials in the organic vehicle, the...

Embodiment 2

[0058] Embodiment 2, a low-temperature sintered thick film slurry applied to PI film, including the following materials by weight, specifically:

[0059] Binder phase 13%

[0060] Organic Vehicle 15%

[0061] Lanthanum oxide or yttrium oxide 2%

[0062] High-purity nano-silver powder 70%;

[0063] Among them, the binder phase is low-temperature sintered glass powder, the particle size of low-temperature sintered glass powder is 500 nm-800 nm, the melting temperature of low-temperature sintered glass powder is less than 400 ° C, and the low-temperature sintered glass powder is composed of Bi 2 o 3 , SiO 2 、Al 2 o 3 Composed of three materials, Bi in the low-temperature sintered glass powder 2 o 3 , SiO 2 、Al 2 o 3 The weight parts of three kinds of materials are successively 30%, 40%, 30%;

[0064] The organic vehicle is composed of a solvent mixture, a thickener, a thixotropic agent, and a defoamer. The weight parts of the solvent mixture, a thickener, a thixotropi...

Embodiment 3

[0076] Embodiment 3, a low-temperature sintered thick film slurry applied to PI film, including the following materials by weight, specifically:

[0077] Binder phase 30%

[0078] Organic Vehicle 19%

[0079] Lanthanum oxide or yttrium oxide 1%

[0080] High-purity nano-silver powder 50%;

[0081] Among them, the binder phase is low-temperature sintered glass powder, the particle size of low-temperature sintered glass powder is 500 nm-800 nm, the melting temperature of low-temperature sintered glass powder is less than 400 ° C, and the low-temperature sintered glass powder is composed of Bi 2 o 3 , SiO 2 、Al 2 o 3 Composed of three materials, Bi in low temperature sintered glass powder 2 o 3 , SiO 2 、Al 2 o 3 The weight parts of three kinds of materials are successively 40%, 50%, 10%;

[0082] The organic vehicle is composed of solvent mixture, thickener, thixotropic agent, and defoamer, and the weight parts of solvent mixture, thickener, thixotropic agent, and defoa...

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Abstract

The invention discloses a low-temperature sintering thick film paste applied to PI films and a preparation method of low-temperature sintering thick film paste. The thick film paste is prepared from a bonding phase, an organic carrier, lanthanum oxide or yttrium oxide and high-purity nano-silver powder. The bonding phase is prepared from Bi2O3, SiO2 and Al2O3, the organic carrier is prepared from a solvent mixture, a thickening agent, a thixotropic agent and a defoaming agent, and the solvent mixture is prepared by mixing a solvent and PVB. The thick film paste has the advantages of being low in sintering temperature and resistance value, short in sintering time, large in adhesion force and good in weldability. The preparation method includes the steps that firstly, the bonding phase is prepared; secondly, the organic carrier is prepared; thirdly, the bonding phase, the organic carrier, the high-purity nano-silver powder and lanthanum oxide or yttrium oxide are mixed and ground, and the thick film paste is obtained after screening. The thick film paste can be effectively produced and prepared with the preparation method.

Description

technical field [0001] The invention relates to the technical field of electronic materials, in particular to a low-temperature sintered thick-film slurry applied to PI films and a preparation method thereof. Background technique [0002] Circuit paste is the basic material for the manufacture of thick film components. It is a paste made of solid powder and organic solvents that are uniformly mixed by three-roll rolling (reminiscent of toothpaste, paint, etc.); among them, according to different uses, Circuit paste can be divided into dielectric paste, resistance paste and conductor paste: according to different substrate types, circuit paste can be divided into ceramic substrate, polymer substrate, glass substrate, metal insulating substrate circuit According to different sintering temperatures, circuit paste can be divided into high temperature, medium and low temperature drying circuit paste; according to different uses, circuit paste can be divided into general circuit p...

Claims

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Application Information

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IPC IPC(8): H01B1/22H01B1/16H01B13/00
CPCH01B1/16H01B1/22H01B13/00
Inventor 张念柏苏冠贤
Owner DONGGUAN COREHELM ELECTRONICS MATERIAL TECH CO LTD
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