Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of preparation method of copper-zinc-tin-sulfur nanocrystal of hexagonal wurtzite structure

A hexagonal wurtzite, copper-zinc-tin-sulfur technology, applied in nanotechnology, nanotechnology, chemical instruments and methods, etc., can solve problems such as use, environmental pollution, waste of resources, etc., and achieve low cost, easy promotion, and small size. Effect

Inactive Publication Date: 2017-06-06
HEFEI UNIV OF TECH
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The present invention provides a method for preparing CZTS nanocrystals with a hexagonal wurtzite structure in order to avoid the shortcomings of the above-mentioned prior art. problems, but also to avoid the use of organic solvents in the preparation process, resulting in environmental pollution and waste of resources

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of preparation method of copper-zinc-tin-sulfur nanocrystal of hexagonal wurtzite structure
  • A kind of preparation method of copper-zinc-tin-sulfur nanocrystal of hexagonal wurtzite structure
  • A kind of preparation method of copper-zinc-tin-sulfur nanocrystal of hexagonal wurtzite structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] In this example, hexagonal wurtzite structure copper-zinc-tin-sulfur nanocrystals were prepared according to the following steps:

[0029] a. Take 0.375mmol Cu 2 O nanocubic particles were dispersed in 10 mL of deionized water to form Cu 2 O nano cubic particle dispersion;

[0030] b. Dissolve 5mL of SnCl with a concentration of 0.075M 4 The solution was added dropwise to 10mL of 0.3M Na 2 In the aqueous solution of S, stir to form a colorless and transparent solution B;

[0031] c, the Cu obtained in step a 2 The O nanocubic particle dispersion liquid adds in the solution B that step b obtains, and adding 5mL concentration is 0.075M Zn(NO 3 ) 2 solution, adjust the pH value to 7, and stir for 10 minutes to obtain a mixed solution;

[0032] d. Add the mixed solution into the reaction kettle and react at 190°C for 24 hours; after cooling the reaction kettle to room temperature, centrifuge to obtain the precipitate, wash it with absolute ethanol for several times a...

Embodiment 2

[0039] Na in test step b 2 The effect of the amount of S on the purity of the product, this example prepares the hexagonal wurtzite structure CZTS nanocrystals according to the same method as in Example 1, the difference is only that the Na in step b 2 The amount of S solution was changed to 10mL, 0.15M.

[0040] The X-ray diffraction pattern of the obtained sample is as Image 6 As shown, it can be seen from the figure that there are many impurity peaks (marked with an asterisk in the figure).

Embodiment 3

[0042] In order to test the effect of the pH value on the crystal phase of the product in step c, this example prepared hexagonal wurtzite structure CZTS nanocrystals according to the same method as in Example 1, the only difference being that the pH value in step c was adjusted to 7 and 8 in sequence , 9, 10, 11, 12.

[0043] The X-ray diffraction pattern of each sample obtained is as follows Figure 7 As shown, it can be seen from the figure that as the pH value decreases, the product gradually transforms from a tetragonal kesterite structure to a hexagonal wurtzite structure.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a preparation method of a hexagonal wurtzite structure copper-zinc-tin-sulfur nano-crystal. The preparation method is characterized in that copper-source nano-particles serve as raw materials, a tin source, a sulfur source and a zinc source are added, the pH is adjusted, a reaction is conducted in a reaction still for 24 h at the temperature of 150-190 DEG C, and then the hexagonal wurtzite structure copper-zinc-tin-sulfur nano-crystal is obtained. According to the preparation method of the hexagonal wurtzite structure copper-zinc-tin-sulfur nano-crystal, reaction conditions are mild, high-temperature treatment is not needed, cost is low, a vacuum environment is not needed, an organic solvent is not used, environment friendliness is achieved, and popularization is easy. The obtained product is of a hexagonal wurtzite structure, and the selection range of a copper-zinc-tin-sulfur solar cell light absorption layer material is widened.

Description

technical field [0001] The invention relates to a hexagonal wurtzite structure copper-zinc-tin-sulfur (Cu 2 ZnSnS 4 , the English abbreviation is CZTS) the preparation method of nanocrystal, belongs to the technical field of nanometer material. Background technique [0002] Copper zinc tin sulfur (Cu 2 ZnSnS 4 , the English abbreviation is CZTS) is a kind of photovoltaic semiconductor material with broad application prospects, has the characteristics of direct bandgap (1.5eV), high light absorption coefficient, low cost, environment-friendly, etc. The conversion efficiency has reached 12.6%. At present, the preparation of CZTS mostly adopts vacuum technology, which requires the use of expensive high-vacuum equipment with high cost and large investment. Therefore, low-cost non-vacuum technology for preparing CZTS photovoltaic materials (such as solution method preparation) is more favored by people. However, most of the existing solution methods for preparing CZTS use o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C01G19/00B82Y30/00
CPCC01G19/006C01P2002/04C01P2002/72C01P2002/82C01P2002/85C01P2004/64
Inventor 许俊孙怡文胡正乔
Owner HEFEI UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products