36results about How to "Affect shape" patented technology

The invention discloses a pneumatic flat pressing machine for sticking a carton box and belongs to the field of carton box formation machines. The pneumatic flat pressing machine comprises a pneumatic pressing bed, a first support, a second support, a cross beam and a flat pressing mechanism, wherein the first support and the second support are arranged vertical to the working plane of the pneumatic pressing bed, the cross beam is fixedly connected between the first support and the second support, and the flat pressing mechanism is arranged on the cross beam; the flat pressing mechanism comprises an air cylinder, a mounting plate, a self-adaption inclining device, a press plate and a pneumatic system; the air cylinder is fixedly arranged on the mounting plate and is connected with the cross beam through the self-adaption inclining device; a piston rod of the air cylinder is connected with the press plate through the cross beam; the air cylinder is connected with the pneumatic system and controls the lifting of the air cylinder through a control valve arranged on the outer wall of the pneumatic pressing bed. According to the pneumatic flat pressing machine disclosed by the invention, the problem that the pressure of a sticking part of the carton box is uneven is modified; the flatly pressed carton box is firm in sticking and is flat; the position of the flat pressing mechanism is adjustable, and the press plate is rotatable, so that the use of the flat pressing machine is convenient, the applicability of the flat pressing machine is improved, the structure is simple, the operation is convenient, the cost is low, and the use effect is remarkable.

The invention relates to double-layer emulsified liquid drop, a medicine carrying micro-sphere, a method for preparing the same and a device for preparing the double-layer emulsified liquid drop. The device comprises primary micro-channels and secondary micro-channels which are serially connected with one another. The primary micro-channels are cross-shaped micro-channels, T-shaped micro-channels, Y-shaped micro-channels or co-flowing micro-channels; the secondary micro-channels include type-A micro-channels or type-B micro-channels. Single-layer emulsified liquid drop is formed by internal-phase fluid and intermediate-phase fluid in the primary micro-channels, and the double-layer emulsified liquid drop is formed by the single-layer emulsified liquid drop, catalyst or curing agent solution and continuous-phase fluid at outlets of the secondary micro-channels. The double-layer emulsified liquid drop, the medicine carrying micro-sphere, the method and the device have the advantage that the device for preparing the double-layer emulsified liquid drop is simple in structure and flexible in adjustment, the particle sizes and the internal and external layer thicknesses of the emulsified liquid drop and the medicine carrying micro-sphere are easy to flexibly control, the double-layer emulsified liquid drop and the medicine carrying micro-sphere are low in preparation cost, the particle sizes of the double-layer emulsified liquid drop can be controlled, and the double-layer emulsified liquid drop is wide in particle size adjustable range.

The invention discloses a waterproof treatment method for a mobile terminal and the mobile terminal. The method comprises the following steps: fully jointing an LCD (Liquid Crystal Display) module and a touch screen; sticking protective films to the outer surface of a shell and the outer surface of the LCD module to prevent coating by waterproof coatings; vacuumizing all components of the mobile terminal, and coating waterproof coatings onto the surfaces of all components; jointing a backlight module to the LCD module by adopting a double faced adhesive tape, and removing the protective films; assembling all components into the mobile terminal. The LCD module and the touch screen are jointed fully, and a layer of waterproof coating is coated on the outer layer of each component of the mobile terminal to allow the components to be isolated from water or current-conducting liquid, so that failures of circuits caused by short circuit are prevented, and waterproofness is realized.

The invention discloses a preparation method of a nano material-based bionic bone scaffold. The preparation method comprises following steps: a negative die is prepared via fused deposition modeling; dissolved biomaterial PLGA is mixed with nano-grade beta-TCP powder, and an obtained mixture is mixed uniformly using a vibration grinder; an obtained slurry is injected into the negative die via negative pressure method, and the negative die is delivered into a freeze dryer for freeze drying; and the negative die is removed so as to obtain the nano material-based bionic cone scaffold. The nano material-based bionic cone scaffold is capable of satisfying requirements on scaffold materials, structures, and strength; controllable adjustment on appearance and porosity is realized; customized manufacturing of scaffolds implanted at bone defect parts is realized; success rate of complex bone defect treatment in clinic is increased effectively; and application prospect in clinic is promising.

The invention discloses a preparation method of a nest-shaped nitrogen-doped negative electrode porous carbon material, belonging to the field of carbon-based supercapacitors. The preparation method comprises the following preparation steps: 1) mixing a phenolic compound, a formaldehyde solution and an inorganic acid solution; 2) heating the mixed solution for a reaction to prepare a reaction solution; 3) centrifuging the reaction solution to obtain a precipitate; 4) drying the precipitate to obtain a precursor; and 5) carbonizing the precursor, a nitrogen source and an activating agent in aninert gas atmosphere, and carrying out washing and drying to obtain the nest-shaped nitrogen-doped negative electrode porous carbon material. According to the invention, hydrothermal polymerization and a carbonization reaction are combined, so simple preparation of the nest-shaped nitrogen-doped negative electrode porous carbon material is realized; the preparation method is simple, Al2O3 or SiO2and the like do not need to be used as a template, and the preparation method is suitable for industrial large-scale production; and the prepared material is high in specific surface area, has a hierarchical porous structure, and presents high specific capacity and good rate capability under a nitrogen doping condition.

A bearing assembly for rotatably supporting a shaft member. The bearing assembly has an inner ring having an inner surface sized to receive the shaft member therein. A first fastener threadedly engages a first fastener aperture formed in the inner ring such that a distal end of the first fastener engages the shaft member to selectively retain the inner ring to the shaft member for rotation therewith. A first groove extends along the inner surface of the inner ring and is aligned with the first fastener aperture formed in the inner ring. The first groove is sized to permit clearance between a burr or other obstruction formed on an exterior surface of the shaft member.

The invention relates to the technical field of nanometer core-shell materials, in particular to a nanometer hollow titanium dioxide microsphere with low reflection index and high catalysis activity and a preparation method thereof. The preparation method comprises the following steps of leading special functional monomer-zwitter ion reactive emulsifier SM-JR-1, so as to prepare a cationic polystyrene emulsion; then, diluting the cationic polystyrene emulsion by a solvent, adding a titanium source and a chelating agent to generate hydrolysis reaction, and coating titanium dioxide to the surface of the cationic polystyrene microsphere, so as to obtain the nanometer core-shell titanium dioxide microsphere with controllable particle size and shell thickness; furthermore, preparing the nanometer hollow titanium dioxide microsphere. The preparation method has the advantages that the nanometer core-shell titanium dioxide microsphere with controllable particle size and shell thickness can bedirectly obtained by a one-step method, so that the preparation steps are greatly simplified; the technical problem of influence on the shape of the nanometer core-shell titanium dioxide microsphere due to easiness in sticking and deformation of the polystyrene microsphere in the drying process is solved.

The invention relates to the technical field of semiconductors, in particular to a photoetching machine alignment mark manufacturing method and a wafer, the photoetching machine alignment mark manufacturing method comprises the following steps: providing a first photoetching plate, forming a first pattern and a second pattern on the first photoetching plate, respectively forming a first alignment mark and a second alignment mark in the exposure area of the wafer through the first pattern and the second pattern; providing a second photoetching plate, forming a third pattern and a fourth pattern on the second photoetching plate, forming a fourth alignment mark on which the second alignment mark is overlaid through the fourth pattern, and covering the first alignment mark through the third pattern; and providing a third photoetching plate, forming a fifth pattern on the third photoetching plate, and forming a third alignment mark on which the first alignment mark is overlaid through the fifth pattern. According to the manufacturing method of the alignment mark of the photoetching machine, the alignment precision and the yield of the alignment mark can be improved.

The invention provides a preparation method of a metal interconnection structure. The method comprises that a lower dielectric layer with an interconnection line is provided; an etching terminal detection layer rich in nitrogen, a porous interlayer dielectric layer, a low K buffer layer and a metal hard mask layer are formed on the lower dielectric layer successively; a photoresist layer with an open-mounted pattern is formed on the metal hard mask layer, and the cross sectional width of an opening is greater than that of the interconnection line; the metal hard mask layer and the low K bufferlayer are etched to form an opening structure; femto second laser etching is carried out on the porous interlayer dielectric layer by taking the opening structure as a mask; during detection, when the etching terminal detection layer rich in nitrogen is reached by etching, third etching is carried out, and a nitrogen reduction gas is input in the etching process; after that the interconnection line in the lower portion is exposed, nitrogen is input continuously to over etching the lower dielectric layer further and form an opening structure; and a barrier layer, a crystal seed layer and a metal layer are formed successively in the opening structure, and the metal interconnection structure is formed.

The invention discloses a preparation method of a hexagonal wurtzite structure copper-zinc-tin-sulfur nano-crystal. The preparation method is characterized in that copper-source nano-particles serve as raw materials, a tin source, a sulfur source and a zinc source are added, the pH is adjusted, a reaction is conducted in a reaction still for 24 h at the temperature of 150-190 DEG C, and then the hexagonal wurtzite structure copper-zinc-tin-sulfur nano-crystal is obtained. According to the preparation method of the hexagonal wurtzite structure copper-zinc-tin-sulfur nano-crystal, reaction conditions are mild, high-temperature treatment is not needed, cost is low, a vacuum environment is not needed, an organic solvent is not used, environment friendliness is achieved, and popularization is easy. The obtained product is of a hexagonal wurtzite structure, and the selection range of a copper-zinc-tin-sulfur solar cell light absorption layer material is widened.

The invention relates to a preparation method of a semiconductor interconnection structure. The preparation method includes: providing a lower medium layer with interconnection lines; forming a nitrogen-rich etch stop detection layer, an interlaminar dielectric layer, a low-K buffer layer and a metal hard mask layer in sequence; forming a lithography glue layer with an opening pattern on the metalhard mask layer, and subjecting the lower metal hard mask layer to first etching by taking the opening patter of lithography glue as a mask; after the opening is formed in the metal hard mask layer,subjecting the lower structure to second etching, wherein the second etching adopts oxygen plasma etching of second source power, and the second source power is greater than first source power; when the nitrogen-rich etch stop detection layer is etched, adopting a nitrogen plasma for third etching and inletting hydrogen reduction gas during etching; after the lower interconnection lines are exposed, continuously inletting nitrogen till the opening structure in the interlaminar dielectric layer is obtained.

The invention discloses a method for making Japanese pepper pickled bamboo shoots. The method comprises the following steps: (1) cutting bamboo shoots into pieces of 0.5-2cm in thickness, treating for3-6 minutes with high-pressure steam, and refrigerating at 0-5 DEG C for later use; (2) preparing Japanese pepper soup, controlling the temperature of the Japanese pepper soup to 0-2 DEG C, and soaking the bamboo shoot pieces refrigerated in the step (1) into the Japanese pepper soup for 24-72 hours, wherein the Japanese pepper soup comprises the following components in parts by weight: 40-70 parts of anise, 300-500g of ginger, 80-120 parts of Chinese prickly ash, 10-30 parts of pepper, 30-70 parts of rhizoma kaempferiae, 150-250 parts of garlic, 20-40 parts of fennel, 240-300 parts of chicken essence, 2000-2500 parts of edible salt, 6000-7000 parts of wild Japanese pepper and 40000-60000 parts of water; and (3) taking out the bamboo shoot pieces soaked in the step (2), and performing sealing packaging in the presence of nitrogen at minus 1 DEG C to 2 DEG C, thereby obtaining the Japanese pepper pickled bamboo shoots. By adopting the method, the crispiness and the stability of the bamboo shoot pieces can be ensured, the preservation time is prolonged, the food security is ensured due to a brittleness-keeping agent, meanwhile fermentation is not implemented with zymophyte or aged brine, process procedures are simplified, and the operation controllability is improved.

The invention provides a novel double-beam laser composite laser powder filling welding method which comprises the following steps that 110, the welding purpose is obtained, and filling powder and protective gas are determined according to the type of a welding material and the welding requirement; 120, a preliminary test is performed, process parameters of the two beams of laser are preliminarilyset, an optimal liquid micro-forging area is determined by using a visual tracking system and a temperature sensing system, and the process parameters of the two beams of laser are optimized to update the process parameters; and 130, the novel double-beam laser composite laser powder filling welding is completed according to the related parameters optimized by the preliminary test. Under the action of micro-forging laser on a welding area in a molten state, the number of air holes in a weld joint is restrained, columnar crystals are converted into isometric crystals, the structure is finer, the morphology and the size of a primary phase and an eutectic structure are affected, the dendritic crystal arm distance is shortened, the chemical component nonuniformity of a molten pool area is reduced, and the weld joint structure and the mechanical property are improved.

The invention discloses a metal oxide-graphene quantum dot composite material, a preparation method and application thereof. The preparation method of the composite material comprises the steps that synthesized graphene quantum dots are added into water to form a dispersion solution, then a soluble metal salt and an oxidizing agent are added, and after the soluble metal salt is dissolved, a hydrothermal reaction is conducted to obtain the metal oxide-graphene quantum dot composite material. According to the invention, graphene quantum dots are used as a modifier to modify a metal oxide to form an MOx-GQDs composite material, so that the inherent low electron conductivity of the metal oxide is improved, the dissolution of the metal oxide in the charging and discharging process of the aqueous polyvalent metal ion battery is inhibited, and excellent cycle stability is shown; and the preparation method is simple, and a universal and efficient method is provided for material structure optimization.

The invention discloses a high-activity aluminum oxide loaded platinum catalyst, a preparation method and application thereof, and belongs to the field of catalytic reaction engineering. According to the technical scheme, an aluminum oxide carrier is pretreated by adopting dielectric barrier discharge organic plasma to obtain an aluminum oxide carrier grafted with an organic group; and platinum is loaded on the pretreated aluminum oxide carrier by an impregnation method to obtain the high-activity aluminum oxide-loaded platinum catalyst. According to the invention, a green and environment-friendly dielectric barrier discharge low-temperature plasma method is used for preparing the high-activity aluminum oxide loaded platinum catalyst, the prepared catalyst has good catalytic activity on catalytic dehydrogenation reaction in the dibenzyl toluene hydrogen storage process, the hydrogen storage efficiency can be effectively improved, and the catalyst is popularized and applied to preparation of liquid organic hydrogen storage carriers and has good economic benefits.

The invention discloses a packaging flat knitting machine for quickly folding webbing. The machine structurally comprises a control box, a machine body and a webbing folding device, the control box isprovided with an electrical box, a control panel and a hand wheel, the machine body is provided with a bottom support, a motor and a shell, and the webbing folding device is provided with a main shaft, a supporting rod, a bottom plate, a top plate and a webbing clamping groove. The packaging flat knitting machine has the beneficial effects that a webbing can be fixed through a rotating plate in the webbing clamping groove, the top plate and the bottom plate can be fastened through mutual matching of a clamping plate and a groove, the webbing is fixed between the top plate and the bottom platefor webbing winding, the webbing is prevented from turning over in the rotating process due to the stop of the top plate and the bottom plate, the problem that creases are produced on the webbing andaffect the webbing appearance is avoided, and meanwhile space is saved.

The invention discloses a preparation method and products of Bi12TiO20 micro-spheres. The preparation method comprises the following steps: by using a titanium oxyhydroxide precipitate which is obtained by hydrolyzing tetrabutyl titanate by virtue of an ammonia-water solution as a titanium source, fully dispersing the titanium oxyhydroxide precipitate in an ammonium bismuth citrate aqueous solution; then, adding a certain potassium hydroxide as a mineralizer; fully stirring and oscillating; transferring to a reaction kettle; sealing; and carrying out hydrothermal treatment at 150-300 DEG C for 6-48 hours to finally obtain the Bi12TiO20 micro-spheres with the diameters of 2-4 mu m, wherein each micro-sphere is self-assembled by smaller nano-particles. According to the preparation method of the Bi12TiO20 micro-spheres, by using the ammonium bismuth citrate as a bismuth source for the first time, the Bi12TiO20 micro-spheres which are self-assembled by the nano-particles by means of precise regulation of reaction conditions without additionally adding a surface modifier. The preparation method disclosed by the invention is simple and controllable in preparation process.

The invention relates to the technical field of nano-core-shell materials, in particular to a nano-hollow titanium dioxide microsphere with low refractive index and high catalytic activity and a preparation method thereof. ‑JR‑1 prepares a cationic polystyrene emulsion; then dilutes the cationic polystyrene emulsion with a solvent and adds a titanium source and a chelating agent for a hydrolysis reaction, and coats titanium dioxide on the surface of the cationic polystyrene microspheres, thereby producing Nano-core-shell titanium dioxide microspheres with controllable particle size and shell thickness are obtained, and then nano-hollow titanium dioxide microspheres are further prepared. The invention directly obtains nano-core-shell titanium dioxide microspheres with controllable particle size and shell thickness through a one-step method, greatly simplifies the preparation steps, and solves the problem that polystyrene microspheres are prone to adhesion deformation during the drying process, which affects the nano-core-shell Technical issues in the morphology of titanium dioxide microspheres.

The invention discloses a semiconductor structure and a forming method thereof. The forming method comprises the steps of providing a to-be-etched layer; forming an initial mask layer on the to-be-etched layer; forming a graphical structure exposing a part of the initial mask layer on the initial mask layer; forming a barrier layer on the surface of the side wall of the graphical structure; takingthe graphical structure and the barrier layer as masks, carrying out ion doping processing on the initial mask layer, and forming a doped region and an undoped region in the initial mask layer; and removing the graphical structure and the barrier layer; after removing the graphical structure and the barrier layer, removing the undoped region, forming a mask layer on the surface of the to-be-etched layer , forming a first opening exposing the top surface of the to-be-etched layer in the mask layer. The barrier layer is formed on the surface of the side wall of the graphical structure, so thatdoped ions can be effectively prevented from entering the graphical structure to enter the undoped region, so that the undoped region will not be decreased; since the consistency of the undoped regionand the graphical structure is effectively improved by using the barrier layer, and the accuracy of pattern transfer is improved.

The invention provides a preparation method of a metal interconnection structure. The method comprises that a lower dielectric layer with an interconnection line is provided; an etching terminal detection layer rich in nitrogen, a porous interlayer dielectric layer, a low K buffer layer and a metal hard mask layer are formed on the lower dielectric layer successively; a photoresist layer with an open-mounted pattern is formed on the metal hard mask layer, and the cross sectional width of an opening is greater than that of the interconnection line; the metal hard mask layer and the low K bufferlayer are etched to form an opening structure; femto second laser etching is carried out on the porous interlayer dielectric layer by taking the opening structure as a mask; during detection, when the etching terminal detection layer rich in nitrogen is reached by etching, third etching is carried out, and a nitrogen reduction gas is input in the etching process; after that the interconnection line in the lower portion is exposed, nitrogen is input continuously to over etching the lower dielectric layer further and form an opening structure; and a barrier layer, a crystal seed layer and a metal layer are formed successively in the opening structure, and the metal interconnection structure is formed.

The invention relates to steamed dumpling moulding equipment. The steamed dumpling moulding equipment comprises a rack and a circular rail arranged on the rack, wherein a wrapper connecting station, astuffing injecting station and a material pushing station are sequentially arranged on the circular rail, a wrapper conveying device is arranged at the wrapper connecting station, a stuffing supplying device is arranged at the stuffing injection station, a wrapper connecting plate which can move around on the circular rail is arranged on the circular rail, a moulding groove is formed in the wrapper connecting plate, a through hole is formed in the moulding groove, a telescopic rod is arranged at the bottom of the wrapper connecting plate, a connecting plate is fixed at the telescopic end of the telescopic rod, the connecting plate is connected with the bottom of a lifting body, and the top of the lifting body is movably arranged in the through hole. By arranging the lifting body which canblock the through hole at the bottom of the through hole, the telescopic rod of a telescopic type can fix a position of the lifting body, an upward supporting force can be provided for a wrapper material when stuffing is poked, and stuffing of a steamed dumpling can be tightly poked into a wrapper.

The invention discloses a preparation method of a hexagonal wurtzite structure copper-zinc-tin-sulfur nano-crystal. The preparation method is characterized in that copper-source nano-particles serve as raw materials, a tin source, a sulfur source and a zinc source are added, the pH is adjusted, a reaction is conducted in a reaction still for 24 h at the temperature of 150-190 DEG C, and then the hexagonal wurtzite structure copper-zinc-tin-sulfur nano-crystal is obtained. According to the preparation method of the hexagonal wurtzite structure copper-zinc-tin-sulfur nano-crystal, reaction conditions are mild, high-temperature treatment is not needed, cost is low, a vacuum environment is not needed, an organic solvent is not used, environment friendliness is achieved, and popularization is easy. The obtained product is of a hexagonal wurtzite structure, and the selection range of a copper-zinc-tin-sulfur solar cell light absorption layer material is widened.

The invention discloses an installation method of a booster fan for a building smoke exhaust system, and relates to the technical field of building installation. According to the technical scheme, S1,preparation before installation is conducted, specifically, an installation rod is arranged and rotationally connected with a fixed pulley, the fixed pulley is located on the outer side of a buildingand located over the installation position of the booster fan, a lifting rope of a lifting device is wound around the fixed pulley, and the two sides, in the axial direction of the fixed pulley, of the installation rod are both provided with guide ropes; S2, booster fan lifting is conducted, specifically, the lifting rope of the lifting device is connected to the booster fan needing to be installed, the two sides of the booster fan are in sleeving connection with the guide ropes through climbing hooks correspondingly, the lifting device is started to drive the booster fan to move upwards to acorresponding boosting air feeding opening along the two guide ropes; and S3, booster fan installation is conducted, specifically, the booster fan is dragged into the boosting air feeding opening, and the booster fan is installed and fixed through expansion bolts. By arranging the fixed pulley and the lifting device, the time for carrying the booster fan is saved, so that installation of the booster fan is more efficient.

The invention provides a method of preparing a semiconductor structure having a porous dielectric layer. The method comprises: a lower dielectric layer having interconnect lines is provided; a nitrogen-rich etch stop detection layer, a porous inter-layer dielectric layer, a low-k buffer layer, a metal hard mask layer, and a photoresist layer with an opening pattern are formed on the lower dielectric layer successively; first etching is carried out on the metal hard mask layer and the low-k buffer layer below by using the opening pattern of the photoresist as a mask; the rest of photoresist isremoved; second etching is carried out on the porous inter-layer dielectric layer below by using the opening as a mask, wherein the second etching employs femtosecond laser etching and the edge of theexposed hole structure is melted partially to seal the exposed hole structure when the porous inter-layer dielectric layer is etched by using femtosecond laser; third etching is carried out and hydrogen gas is introduced during the etching; and after exposure of the lower interconnect lines, hydrogen gas is continuously led to obtain an open structure in the porous inter-layer dielectric layer.

The invention belongs to the technical field of materials for the material nuclear industry, and particularly relates to a chip anti-radiation packaging material and an anti-radiation packaging process. The chip anti-radiation packaging material is formed by doping wide bandgap semiconductor particles in a plastic packaging material, and the weight ratio of the wide bandgap semiconductor particles is 10-75%. The chip anti-radiation packaging process comprises the following steps: firstly, growing an anti-radiation layer on the back surface of a copper substrate, welding a chip on the front surface of the copper substrate, and bonding the chip with a pin of the copper substrate; then weighing a plastic packaging material and the doped particles, putting the plastic packaging material and the doped particles into a mold with a preset stirring temperature, and uniformly stirring, so as to obtain a plastic packaging material composite material after the stirring time is ended; and finally, carrying out injection molding and press sealing on the uniformly stirred plastic packaging composite material, and carrying out pin electroplating and burr and flash removal on the plastic packaged chip. The radiation-proof performance of the whole chip and the reliability in the space environment are improved, and meanwhile, the radiation-proof capability of the back of a chip device is improved.