Manufacturing method of silicon-based germanium detector with low dark current
The invention relates to a germanium detector and a manufacturing method, which can be applied to circuits, electrical components, semiconductor devices, etc., and can solve the problems of fast corrosion rate, difficulty in controlling germanium corrosion amount, influence of germanium doping concentration, etc., and achieve the effect of stable corrosion effect.
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[0026] In order to enable those skilled in the art to better understand the technical solutions in the embodiments of the present invention, and to make the above-mentioned purposes, features and advantages of the embodiments of the present invention more obvious and understandable, the following describes the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings For further detailed explanation.
[0027] In the description of the present invention, unless otherwise specified and limited, it should be noted that the term "connection" should be understood in a broad sense, for example, it can be a mechanical connection or an electrical connection, or it can be the internal communication of two elements, it can be Directly connected or indirectly connected through an intermediary, those skilled in the art can understand the specific meanings of the above terms according to specific situations.
[0028] Such as figure 2 As...
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