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Preparation method of TiO2-dopted film

A thin-film and seed layer technology, which is applied in semiconductor/solid-state device manufacturing, organic semiconductor devices, electric solid-state devices, etc., can solve problems such as complex processes and achieve the effect of improving performance

Active Publication Date: 2016-08-24
ZHENGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] For existing high temperature synthesis doped TiO 2 Material and the process complexity problem that needs to carry out secondary film formation, the purpose of the present invention is to propose a kind of novel doped TiO 2 Film Preparation Method

Method used

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  • Preparation method of TiO2-dopted film
  • Preparation method of TiO2-dopted film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Step S1--Preparation of TiO 2 film:

[0029] (1) Add 1L of pure water into a clean beaker, and then put the beaker into a water bath;

[0030] (2) Add a certain amount of TiCl dropwise to the stirring water bath beaker 4 Liquid feedstock, to obtain TiCl 4 solution;

[0031] (3) NbCl 5 Dissolve in 100μL of concentrated hydrochloric acid (36%), stir evenly and add to the TiCl prepared in step (2) 4 in solution;

[0032] (4) Clean the FTO conductive glass sequentially with deionized water, acetone, absolute ethanol, and deionized water for 10 minutes;

[0033] (5) Dry the washed FTO conductive glass with nitrogen, dry it at 100°C for 10 minutes, and then treat it with ozone plasma for 15 minutes;

[0034] (6) Put the cleaned FTO conductive glass into the NbCl-doped glass obtained in step (3) 5 TiCl 4 in solution;

[0035] (7) Control the temperature of the solution in the beaker at 70°C with a water bath, and grow the film for 1 hour;

[0036] (8) Clean the FTO ...

Embodiment 2

[0052] NbCl in step S1 (3) of embodiment 1 5 Change to WCl 6 , and the other steps remain unchanged, the efficiency of the battery can never be doped (0%W:TiO 2 ) from 12.24% to 0.3% doped (0.3%W:TiO 2 ) followed by 14.87%.

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Abstract

The invention belongs to the photoelectric film technology field, and particularly discloses a preparation method of a TiO2-dopted film. <{EN2}>The method comprises the steps of (1) preparing a 100-400 mM TiCl4 aqueous solution while stirring; (2) dissolving metal-doped salt into a dissolved solvent according to an object dope proportion, and adding the mixture to the solution prepared in step (1) after stirring uniformly; (3) putting a substrate into the solution obtained in step (2), and controlling the solution temperature at 70-150 DEG C for 10min-5h; (4) taking out the substrate and cleaning with ethanol and water in order; and (5) controlling the temperature of the cleaned substrate at 100-150 DEG C and annealing for 30min-3h. The resultant on the substrate is the TiO2-dopted film. <{EN3}>The compact TiO2-dopted film can be obtained directly from the solution; the whole process can be carried out at a low temperature in normal atmosphere; the film can be formed on the substrate at one time; finally, the invention provides a TiO2 film that is dopted with different elements at a low temperature; and the performance of a perovskite solar cell is greatly improved.

Description

technical field [0001] The invention belongs to the field of photoelectric thin film technology, in particular to a doped TiO 2 The method of film preparation. Background technique [0002] TiO 2 It is a typical N-type semiconductor, which is widely used because of its stable performance, simple preparation process and low cost. As an N-type semiconductor, it is mainly caused by the oxygen vacancies formed by itself. Typical TiO 2 Has three structures: anatase, rutile and brookite, but in TiO 2 There are generally only two structures in thin films: rutile and anatase. TiO 2 The band gap is 3.2eV, the band gap is relatively wide, and it does not absorb visible light, so it is widely used in the window layer of photovoltaic devices. [0003] TiO 2 The preparation methods mainly include physical methods, chemical methods and comprehensive methods. Among them, the physical methods are mainly vapor phase physical deposition method, reactive plasma sputtering method, evapo...

Claims

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Application Information

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IPC IPC(8): H01L51/48H01L51/44H01L51/46
CPCH10K30/80H10K30/00H10K2102/00Y02E10/549
Inventor 邵国胜张懿强梁超李鹏伟
Owner ZHENGZHOU UNIV