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Preparation and application of In-Sn composite oxide semiconductor ethanol sensor

A composite oxide and semiconductor technology, applied in instruments, scientific instruments, measuring devices, etc., can solve the problems of low sensitivity and low detection limit of sensors, and achieve the effects of high sensitivity, low detection limit and simple method.

Inactive Publication Date: 2016-08-31
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

One of the main factors limiting the practicality of this type of sensor is the high detection limit and low sensitivity of the sensor.

Method used

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  • Preparation and application of In-Sn composite oxide semiconductor ethanol sensor
  • Preparation and application of In-Sn composite oxide semiconductor ethanol sensor
  • Preparation and application of In-Sn composite oxide semiconductor ethanol sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] The In-Sn composite oxide semiconductor with a molar ratio of In / Sn in the reactant of 1:2 is used as a sensitive material to make an ethanol sensor. The manufacturing process is as follows:

[0038] (1) First, 0.9g SnCl 2 2H 2 O, 0.586g InCl 3 4H 2 O, 5ml ethylenediamine, 4.41gNa 3 C 6 h 5 o 7 2H 2 0. Dissolve 10ml of NaOH (0.4M) solution in 20ml of water while stirring, and stir for 30 minutes to form a homogeneous solution;

[0039] (2) Put the mixed solution of (1) into a 45ml polytetrafluoroethylene kettle and seal it, put it in an oven at 180°C for 12 hours, cool down to room temperature naturally after the end, collect the samples with ethanol and deionized water and centrifuge them and place them in the culture Keep the dish at 80°C for 12 hours and collect the samples;

[0040] (3) Calcining the above-mentioned nanometer gas-sensitive material at 500°C for 2 hours to obtain a gas-sensitive material, mixing the sensitive material with deionized water in...

Embodiment 2

[0043] The In-Sn composite oxide semiconductor with a molar ratio of In / Sn in the reactant of 2:2 is used as a sensitive material to make an ethanol sensor. The manufacturing process is as follows:

[0044] (1) First, 0.9g SnCl 2 2H 2 O, 1.173g InCl 3 4H 2 O, 5ml ethylenediamine, 5.88gNa 3 C 6 h 5 o 7 2H 2 0. Dissolve 10ml of NaOH (0.4M) solution in 20ml of water while stirring, and stir for 30 minutes to form a homogeneous solution;

[0045] (2) Put the mixed solution of (1) into a 45ml polytetrafluoroethylene kettle and seal it, put it in an oven at 180°C for 12 hours, cool down to room temperature naturally after the end, collect the samples with ethanol and deionized water and centrifuge them and place them in the culture Keep the dish at 80°C for 12 hours and collect the samples;

[0046] (3) Calcining the above-mentioned nanometer gas-sensitive material at 500°C for 2 hours to obtain a gas-sensitive material, mixing the sensitive material with deionized water in...

Embodiment 3

[0049] The In-Sn composite oxide semiconductor with the In / Sn molar ratio of the element in the reactant is 2:3 is used as the sensitive material to make the ethanol sensor, and the manufacturing process is as follows

[0050] (1) First, 0.9g SnCl 2 2H 2 O, 1.759g InCl 3 4H 2 O, 5ml ethylenediamine, 7.35gNa 3 C 6 h 5 o 7 2H 2 0. Dissolve 10ml of NaOH (0.4M) solution in 20ml of water while stirring, and stir for 30 minutes to form a homogeneous solution;

[0051] (2) Put the mixed solution of (1) into a 45ml polytetrafluoroethylene kettle and seal it, put it in an oven at 180°C for 12 hours, cool down to room temperature naturally after the end, collect the samples with ethanol and deionized water and centrifuge them and place them in the culture Keep the dish at 80°C for 12 hours and collect the samples;

[0052] (3) Calcining the above-mentioned nanometer gas-sensitive material at 500°C for 2 hours to obtain a gas-sensitive material, mixing the sensitive material wit...

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Abstract

An In-Sn composite oxide semiconductor ethanol sensor prepared by a one-step hydrothermal method, a preparation method and an application of the ethanol sensor in detecting concentration of ethanol in drunk driving and an atmospheric environment are disclosed belong to the field of gas sensor technology. The sensor is composed of commercially available Al2O3 insulating ceramic tube with its outside surface carrying two annular gold electrodes, an In-Sn composite oxide semiconductor sensitive material which coats outside surfaces of the annular gold electrodes and the Al2O3 insulating ceramic tube, and a nickel-cadmium alloy heating coil which passes through the Al2O3 insulating ceramic tube. The sensor has good linearity to low concentration (lower limit of detection is 10 ppm) of ethanol. With the characteristics, the In-Sn composite oxide semiconductor ethanol sensor can be greatly applied in detecting alcohol in drunk driving and an atmospheric environment. And driver's driving safety and environmental safety can be further judged by detection of ethanol concentration.

Description

technical field [0001] 1. The present invention belongs to the technical field of gas sensors, and in particular relates to an In-Sn composite oxide semiconductor ethanol sensor prepared by a one-step hydrothermal method, a preparation method and its application in detecting the concentration of ethanol in drunk driving and atmospheric environment . Background technique [0002] Distinguished from the way of use, ethanol sensors are divided into disposable ethanol sensors and multiple reusable sensors. Commercially available breath alcohol testers are sensors that are reused many times. The research hotspots are more inclined to the development of sensor miniaturization, rapidity, accuracy and precision. Various new materials and new technologies emerge in an endless stream, and are also widely used in ethanol sensors. [0003] Ethanol is an important industrial raw material, which is widely used in chemical industry, food industry, daily chemical industry, medical and hea...

Claims

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Application Information

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IPC IPC(8): G01N27/12
CPCG01N27/12G01N27/125
Inventor 王庆吉林君李旭
Owner JILIN UNIV
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