Magnetic tunnel junction structure and tunneling magneto resistance element

A technology of magnetic tunnel junction and tunnel magnetoresistance, which is applied in the field of magnetoelectronics, can solve the problems of improving the sensitivity of TMR sensors, and achieve the effects of improving signal-to-noise ratio and sensitivity, reducing junction resistance, and suppressing magnetic noise

Inactive Publication Date: 2016-09-14
NANJING UNIV OF TECH +1
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  • Claims
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Problems solved by technology

However, the CoFe magnetic layer has positive magnetostriction, which will bring magnetic noise, which is not conducive to the further improvement of the sensitivity of the TMR sensor.

Method used

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  • Magnetic tunnel junction structure and tunneling magneto resistance element
  • Magnetic tunnel junction structure and tunneling magneto resistance element
  • Magnetic tunnel junction structure and tunneling magneto resistance element

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Embodiment Construction

[0033] The technical scheme of the present invention is described in detail below in conjunction with accompanying drawing:

[0034] In order to improve the sensitivity of the existing TMR device, the idea of ​​the present invention is realized by effectively suppressing the magnetic noise existing in the TMR structure. The present invention improves specifically through the following aspects:

[0035] 1. Introduce an ultra-thin metal Mg layer to form an insulating barrier layer of the Mg / MgO / Mg sandwich superlattice structure:

[0036] The existing TMR structure chooses MgO as the insulating barrier layer because it has extremely small crystal dislocations with magnetic transition metal alloys (such as FeCo), thereby reducing spin-dependent electron scattering and electron scattering at the interface between the insulating layer and the magnetic layer. Extend the mean free shell of spin-dependent electrons. Another reason is that electrons can only tunnel through the spin-u...

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Abstract

The invention discloses a magnetic tunnel junction structure, and belongs to the technical field of magnetic electronics. The magnetic tunnel junction structure comprises the improvements as follows: an ultra-thin metal Mg layer is imported to form an insulating barrier layer with an Mg/MgO/Mg sandwich superlattice structure; the superlattice structure formed by two kinds of ferromagnetic materials with opposite magnetostriction characteristics is used as the free layer of a pinning type TMR (tunneling magneto resistance) structure; and an additional pinning layer capable of realizing the pinning effect on the micro magnetic domain on the edge of the free layer can be imported to the side wall of the free layer. The invention also discloses a tunneling magneto resistance element, and a tunneling magneto resistance magnetic head, a tunneling magneto resistance sensor and a magnetic storage unit which applies the tunneling magneto resistance element. Compared with the prior art, electromagnetic noise in the MTJ (magnetic tunnel junction) element can be effectively lowered, and the sensitivity of the TMR sensor can be greatly improved.

Description

technical field [0001] The invention relates to a magnetic tunnel junction structure, belonging to the technical field of magnetoelectronics. Background technique [0002] Biomolecular recognition has a wide range of applications in RNA strand recognition, gene detection, bacterial diagnosis, new drug discovery, DNA defects and lethal agents in biological warfare, food safety, and early diagnosis and detection of major diseases represented by malignant tumors. Magnetic biomolecular recognition, detection and monitoring is a new type of biomolecular measurement technology developed in recent years. The basic principle of magnetic nanoparticle molecular recognition is to use high-performance magnetic field sensors to measure the fringe field of magnetic nanoparticles labeled biomolecules under magnetization. The fringing field emanating from a single magnetic nanoparticle is about 2 Oe, which is on the order of magnitude similar to the geomagnetic field of 0.5 Oe. Considerin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/02H01L43/08H01L43/10H01L43/12
CPCH10N50/80H10N50/85H10N50/01H10N50/10
Inventor 章伟杨楠胡雪峰
Owner NANJING UNIV OF TECH
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