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a cu 3 bis 3 Film Preparation Method

A technology of thin film and precursor solution, which is applied in the field of preparation of Cu3BiS3 thin film, can solve the problems of not obvious progress, difficulty in battery preparation, high equipment cost, etc., achieve low cost, reduce annealing temperature and annealing time, and simple composition

Active Publication Date: 2017-06-06
CHANGAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Existing Cu 3 BY 3 Thin film preparation methods include sputtering method, thermal evaporation method, alloy post-sulfurization method, etc. These physical methods have problems such as high equipment cost and difficulty in preparing large-area batteries. These preparation methods have not significantly advanced Cu 3 BY 3 Rapid Advances in Batteries

Method used

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  • a cu <sub>3</sub> bis <sub>3</sub> Film Preparation Method
  • a cu <sub>3</sub> bis <sub>3</sub> Film Preparation Method
  • a cu <sub>3</sub> bis <sub>3</sub> Film Preparation Method

Examples

Experimental program
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Effect test

Embodiment 1

[0026] Cu in this example 3 BY 3 The preparation method of film comprises the following steps:

[0027] Step 1. Preparation of precursor solution: add 3.2mmol of copper acetate, 1mmol of bismuth acetate and 1mmol of thiuram into 2mL of N,N-dimethylformamide, ultrasonically dissolve and mix well to prepare a precursor solution;

[0028] Step 2. Film production: spin-coat the precursor solution on the FTO glass by spin-coating method, the spin-coating parameters are 1500rpm spin-coating for 20s, then dry at 300°C for 2min, repeat the spin-coating and drying process several times to obtain the precursor film;

[0029] Step 3, annealing: anneal the precursor film at 300 ° C for 30 min in an atmosphere of S element to obtain Cu 3 BY 3 film.

[0030] figure 1 For the Cu prepared in this embodiment 3 BY 3 The XRD pattern of the film, from figure 1 It can be seen that, except for the diffraction peak of FTO glass, the rest of the diffraction peaks correspond to Cu 3 BY 3 Pha...

Embodiment 2

[0032] Cu in this example 3 BY 3 The preparation method of film comprises the following steps:

[0033] Step 1. Preparing a precursor solution: Add 0.7 mmol of copper nitrate, 0.2 mmol of bismuth nitrate and 0.2 mmol of thiuram to 2 mL of N,N-dimethylformamide, and ultrasonically dissolve and mix uniformly to prepare a precursor solution.

[0034] Step 2. Film formation: spin-coat the precursor solution on the FTO glass by spin-coating method, the spin-coating parameter is 2000rpm spin-coating for 20s, then dry at 300°C for 2min, repeat this process several times to obtain the precursor film;

[0035] Step 3, annealing: anneal the precursor film at 400°C for 10h in an atmosphere of S element to obtain Cu 3 BY 3 film.

[0036] image 3 For the Cu prepared in this embodiment 3 BY 3 The XRD pattern of the film, from image 3 It can be seen that the film prepared in this example is Cu 3BY 3 pure phase.

Embodiment 3

[0038] Cu in this example 3 BY 3 The preparation method of film comprises the following steps:

[0039] Step 1. Preparation of precursor solution: add 1.4 mmol of copper chloride, 0.5 mmol of bismuth chloride and 0.5 mmol of thiuram to 2 mL of dimethyl sulfoxide, dissolve and mix uniformly by ultrasonic to prepare a precursor solution;

[0040] Step 2. Film formation: spin-coat the precursor solution on the molybdenum film on the surface of the glass substrate by spin-coating. The spin-coating parameter is 1500rpm for 20s, and then dry at 200°C for 5min. Repeat this process several times to obtain the precursor film ;

[0041] Step 3, annealing: anneal the precursor film at 300°C for 3 hours in a hydrogen sulfide atmosphere to obtain Cu 3 BY 3 film.

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Abstract

The invention provides a Cu 3 BY 3 The preparation method of the film comprises the following steps: 1. Dissolving the sulfur source, the copper source and the bismuth source in a solvent, and mixing them uniformly to obtain a precursor solution, wherein the sulfur source is thiuram; 2. forming a film from the precursor solution by a liquid phase method , to obtain a precursor film after drying; three, annealing, to obtain Cu 3 BY 3 film. The preparation process of the present invention is simple, the composition of the precursor solution is simple, the equipment requirements are low, and the prepared film is Cu 3 BY 3 Pure phase, the selection window of its annealing process parameters is large.

Description

technical field [0001] The invention belongs to the technical field of thin film materials, in particular to a Cu 3 BY 3 The method of film preparation. Background technique [0002] In order to solve the serious energy crisis existing in today's society, human beings have gradually increased the use of clean energy such as solar energy. Solar cells are an efficient way to use the sun's energy. Among the second-generation thin-film solar cells, only GIGS cells and CdTe cells have been practically used. But these two thin-film batteries have their own problems. For CIGS solar cells, the metal In in the material has less reserves and is more expensive, and there may be a problem of raw material supply in large-scale applications; for CdTe solar cells, the reserves of Te element are also less, and the toxicity of Cd will cause potential problems. Environmental Pollution. [0003] Therefore, low-cost, environmentally friendly, and abundant thin-film solar cell absorber mat...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/032
CPCH01L31/032H01L31/18Y02P70/50
Inventor 柯三民侯兆阳
Owner CHANGAN UNIV
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