Novel NTC thermistor material based on nickel oxide

A thermistor and oxide technology, applied in the direction of resistors with negative temperature coefficient, resistors, non-adjustable metal resistors, etc., can solve the problems of structure relaxation, low volatilization temperature, volatilization of raw material components, etc., and achieve material The effect of simple composition, low sintering temperature and abundant raw materials

A thermistor and oxide technology, applied in the direction of resistors with negative temperature coefficient, resistors, non-adjustable metal resistors, etc., can solve the problems of structure relaxation, low volatilization temperature, volatilization of raw material components, etc., and achieve material The effect of simple composition, low sintering temperature and abundant raw materials

CN105967656AInactive Publication Date: 2016-09-28CENT SOUTH UNIV
11 Cites 12 Cited by

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Novel NTC thermistor material based on nickel oxide
  • Novel NTC thermistor material based on nickel oxide
  • Novel NTC thermistor material based on nickel oxide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] This embodiment according to the molecular formula Ni 1-x-y Y x Mg y O is dosed, where x=0.01, y=0.01. The initial raw material is selected from basic nickel carbonate NiCO 3 2Ni(OH) 2 4H 2 O, Yttrium trioxide Y 2 o 3 , Magnesium oxide MgO. Materials were prepared according to the following experimental process steps:

[0021] (1) The initial raw material is Ni 0.98 Y 0.01 Mg 0.01 O formula ingredients, weigh NiCO 3 2Ni(OH) 2 4H 2 O30.7205g, Y 2 o 3 0.2823g, MgO 0.1007g;

[0022] (2) The raw materials taken in the previous step are dissolved in dilute nitric acid respectively;

[0023] (3) Mix the two solutions prepared in the previous step together, and use a magnetic stirring heater to stir and mix evenly, heat and dry;

[0024] (4) Calcining the powder obtained in the previous step at a temperature of 900° C. and keeping it warm for 2 hours;

[0025] (5) The powder synthesized in the previous step is granulated and pressed into a green body; the g...

Embodiment 2

[0031] This embodiment according to the molecular formula Ni 1-x-y Y x Mg y O was dosed, where x=0.02, y=0.01. The initial raw material is selected from basic nickel carbonate NiCO 3 2Ni(OH) 2 4H 2 O, Yttrium trioxide Y 2 o 3 , Magnesium oxide MgO. Materials were prepared according to the following experimental process steps:

[0032] (1) The initial raw material is Ni 0.97 Y 0.02 Mg 0.01 O formula ingredients, weigh NiCO 3 2Ni(OH) 2 4H 2 O30.4070g, Y 2 o 3 0.5646g, MgO 0.1007g;

[0033] (2) The preparation process is the same as steps (2)-(8) in Example 1.

[0034] The properties of the prepared materials are shown in Table 1. figure 1 with figure 2 shown.

Embodiment 3

[0036] This embodiment according to the molecular formula Ni 1-x-y Y x Mg y O was dosed where x=0.03, y=0.003. The initial raw material is selected from basic nickel carbonate NiCO 3 2Ni(OH) 2 4H 2 O, Yttrium trioxide Y 2 o 3 , Magnesium oxide MgO. Materials were prepared according to the following experimental process steps:

[0037] (1) The initial raw material is Ni 0.967 Y 0.03 Mg 0.003 O formula ingredients, weigh NiCO 3 2Ni(OH) 2 4H 2 O30.3130g, Y 2 o 3 0.8468g, MgO 0.0302g;

[0038] (2) The preparation process is the same as steps (2)-(8) in Example 1.

[0039] The properties of the prepared materials are shown in Table 1. figure 1 with figure 2 shown.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
electrical resistivityaaaaaaaaaa
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a semiconductor ceramic material, and especially relates to a thermistor material which can prepare a thermistor element with negative temperature coefficient (NTC) resistance. The NTC material employs NiO as a base of main compositions, room temperature resistance value and material constant value of the thermistor element are adjusted by adding a trace amount of doping elements. Simple oxides are used as main components in the NTC thermistor material; the material can be sintered into a ceramic body at 1100 DEG C, and is adapted to be sintered and moulded into temperature-sensitive ceramic elements, film temperature-sensitive elements, and low temperature co-sintered laminated temperature-sensitive elements. The thermistor material has the characteristics of good stability, good consistency, and good repeatability, and has adjustable room temperature resistance value, material constant, resistance temperature coefficient and other electrical characteristics; the thermistor material is suitable for temperature measurement, temperature control and line compensation, as well as protection of circuits and electronic components, and the fields of apparatus and application of measurements of flow velocity, flow, and ray.

Description

technical field [0001] The invention relates to an NTC thermistor material for preparing a thermistor element with a negative temperature coefficient (NTC) effect of resistance. Applicable to temperature measurement, temperature control and line compensation, as well as protection of circuits and electronic components, as well as instruments and applications for flow velocity, flow, and ray measurement. Background technique [0002] Negative temperature coefficient (NTC) thermosensitive ceramics are materials whose resistance decreases exponentially with increasing temperature. NTC thermistor has the characteristics of high temperature measurement accuracy, good interchangeability and high reliability, and is widely used in temperature sensing and control of household appliances, vehicles and industrial production equipment. [0003] Among the many NTC material systems, the most common and most widely used are semiconductor thermosensitive ceramics prepared from two or more...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
28 Sep 2016
Publication
CN105967656A
IPC
C04B35/01; C04B35/622; H01C7/04
CPC
C04B35/01; C04B35/622; C04B2235/3206; C04B2235/3225; C04B2235/3279; H01C7/043
Inventors
马志远; 李志成