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Reflective contact for Gan-based LEDs

A technology of LED components and optical reflection, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as reducing silver reflection and increasing the overall manufacturing cost of LED components

Active Publication Date: 2016-10-05
ALPAD CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as disclosed by Kondoh et al., titanium dioxide (TiO 2 ) reduces the reflection of the silver (Ag) it surrounds
In addition, depositing additional titanium dioxide (TiO 2 ) layer requires additional mask patterning, deposition, and etching steps, increasing the overall manufacturing cost of the LED assembly of Kondoh et al.
[0012] Therefore, there remains an unmet need for LED assemblies having improved reflective contacts with reflectivity greater than 90% in the visible wavelength range that do not aggregate after annealing

Method used

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  • Reflective contact for Gan-based LEDs
  • Reflective contact for Gan-based LEDs
  • Reflective contact for Gan-based LEDs

Examples

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Embodiment Construction

[0031] Figure 6A A cross-sectional view of a vertical LED assembly 600 according to an embodiment of the present invention is shown. Figure 6B Shows that the vertical LED assembly 600 corresponds to Figure 6A An enlarged cross-sectional view of area BB shown in. Figure 6C for Figure 6A A transmission electron microscope (TEM) image of an enlarged cross-sectional view of the vertical LED assembly 600. Such as Figure 6A As shown in -B, the LED 601 includes a light emitting layer 606 provided between the first semiconductor layer 604 and the second semiconductor layer 608. The first semiconductor layer 604 and the second semiconductor layer 608 include gallium nitride (GaN). The first semiconductor layer 604 is P-type gallium nitride (p-GaN), and the second semiconductor layer 608 is N-type gallium nitride (n-GaN). P-type gallium nitride (p-GaN) can be formed by doping gallium nitride (GaN) with any suitable p-type dopant such as magnesium (Mg), and N-type gallium nitride (n...

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Abstract

The invention relates to reflective contact for Gan-based LEDs. A method for forming a light emitting diode (LED) assembly with a reflective contact and an LED assembly formed by the method is disclosed. In one embodiment, the method includes forming an LED on a surface of a substrate, the LED comprising a light emitting layer disposed between a first layer comprising a compound semiconductive material having a first conductivity type, and a second layer comprising the compound semiconductive material having a second conductivity type, the compound semiconductive material comprising a group III element and a group V element. The method further includes forming an oxidized region extending inwards of a surface of the first layer opposite the second layer. In one embodiment, the oxidized region is formed by oxygen (O2) plasma ashing the surface of the first layer.

Description

Technical field [0001] The present invention generally relates to semiconductor light emitting diode (LED) devices and assemblies. Background technique [0002] Generally, light emitting diodes (LEDs) start from semiconductor growth substrates, typically III-V compounds. The epitaxial semiconductor layer is grown on the semiconductor growth substrate to form the N-type and P-type semiconductor layers of the LED. The light-emitting layer is formed at the interface between the N-type and P-type semiconductor layers of the LED. After the epitaxial semiconductor layer is formed, electrical contacts are connected to the N-type and P-type semiconductor layers. The individual LEDs are cut into small pieces and mounted to the package by wire bonding. The encapsulant is deposited on the LED, and the LED is sealed with a protective lens that also helps light extraction. When a voltage is applied to the electrical contacts, current will flow between the contacts, causing photons to be e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/36H01L33/40H01L33/00
CPCH01L33/36H01L33/40H01L33/405H01L2933/0016H01L33/025H01L33/32
Inventor 佐藤泰介
Owner ALPAD CORP