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Two-dimensional nano molybdenum sulfide sheet layer/binary oxide laminated structure type resistive random access memory

A binary oxide and two-dimensional nanotechnology, applied in the field of microelectronics and nanomaterials, to achieve the effect of simple equipment, large size, and easy control of material components

Inactive Publication Date: 2016-10-12
TIANJIN UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But so far, there are no literature and patent reports on the two-dimensional nanomolybdenum sulfide sheet as the insertion layer of the resistive switch device to adjust the performance of the resistive switch device.

Method used

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  • Two-dimensional nano molybdenum sulfide sheet layer/binary oxide laminated structure type resistive random access memory
  • Two-dimensional nano molybdenum sulfide sheet layer/binary oxide laminated structure type resistive random access memory
  • Two-dimensional nano molybdenum sulfide sheet layer/binary oxide laminated structure type resistive random access memory

Examples

Experimental program
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Embodiment 1

[0030] A resistive switching device with a two-dimensional nanomolybdenum sulfide sheet layer / binary oxide stack structure, such as figure 1 Shown by Si / SiO 2 The substrate 1, the lower electrode 2, the resistive switch layer and the upper electrode 5 are sequentially stacked, wherein the resistive switch layer is a laminated structure of binary oxide 3 and two-dimensional nanomolybdenum sulfide sheet layer 4, and the material of the lower electrode is 100nm Thick TiN, binary oxide is 25nm HfO 2 The thin film, the two-dimensional nano-molybdenum sulfide sheet layer is a single layer, and the bottom electrode material is Cu with a thickness of 15nm.

[0031] The preparation method of the two-dimensional nano-molybdenum sulfide sheet layer / binary oxide stack structure resistance switch device, the steps are as follows:

[0032] 1) Si / SiO 2 Deposit 100nm TiN as the bottom electrode by magnetron sputtering for the substrate;

[0033] 2) Uniformly coat a layer of photoresist on...

Embodiment 2

[0042] A two-dimensional nano-molybdenum sulfide layer / binary oxide stack structure resistive switch device, the structure is basically the same as that of Example 1, the difference is that: the two-dimensional nano-molybdenum sulfide layer is multi-layered, the thickness is 5nm, prepared The method is the micromechanical exfoliation method. Its preparation and testing steps are the same as in Example 1. The number of two-dimensional nanomolybdenum sulfide sheets used is different)

Embodiment 3

[0044] A two-dimensional nano-molybdenum sulfide layer / binary oxide stack structure resistance switch device, the structure is basically the same as that of Example 1, the difference is that the binary oxide is 25nmTaO 2 film. Its preparation and testing steps are the same as in Example 1.

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Abstract

The invention discloses a two-dimensional nano molybdenum sulfide sheet layer / binary oxide laminated structure type resistive random access memory and a fabrication method therefor, and provides a novel resistive random access memory. The resistive random access memory is formed by superposing a lower electrode, a resistive random layer and an upper electrode in sequence, wherein the resistive random layer is composed of a two-dimensional nano molybdenum sulfide sheet layer and a binary oxide laminated structure. According to the resistive random access memory and the fabrication method, the inserted two-dimensional nano molybdenum sulfide sheet layer and binary oxide laminated structure are taken as the resistance change function layer, so that the formation and fracture of oxygen vacancy conductive filaments are adjusted while excellent performance of a separate binary oxide resistive random access memory is kept; and meanwhile, the generation of excessive oxygen vacancies is suppressed in a set process, the resistance value of a low resistance state is increased, and the reset current of the device is reduced. Compared with the separate binary oxide resistive random access memory, the resistive random access memory provided by the invention has better consistency and lower power consumption. The application fields of the two-dimensional nano molybdenum sulfide sheet layer are further enriched and a new direction is provided for further improving the performance of the resistive random access memory.

Description

technical field [0001] The invention relates to the field of application of nanometer materials and the field of microelectronic technology, in particular to a two-dimensional nanometer molybdenum sulfide sheet / binary oxide stack structure resistive switch device and a preparation method thereof. Background technique [0002] With the rapid development of computer technology and Internet technology in recent years, non-volatile memory devices play an increasingly important role in the semiconductor industry. At present, flash memory (Flash) is still the mainstream of non-volatile memory in the market, but with the continuous advancement of semiconductor technology nodes, the feature size below 22nm, the Flash technology based on the traditional floating gate structure is suffering from serious technical challenges. bottleneck. Resistive memory, because of its many advantages such as fast erasing and writing speed, high storage density, high repeated erasing and writing time...

Claims

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Application Information

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IPC IPC(8): H01L45/00B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H10N70/841H10N70/8822H10N70/021H10N70/8833
Inventor 张楷亮李悦冯玉林王芳方明旭唐登轩苗银萍马峻
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
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