A kind of INOI chip with embedded double-layer membrane and preparation method thereof

Abstract

The invention discloses an insulation substrate LiNbO3 (LNOI) wafer embedded with a dual-layer film and a fabrication method of the LNOI wafer. The oval structure of the wafer sequentially comprises a silicon or LiNbO3 substrate (1), a silicon dioxide buffer layer (2), a gold electrode layer (3), a semiconductor organic polymer layer (4) and a LiNbO3 thin film layer (5) from substrate to top, wherein the gold electrode layer (3) and the semiconductor organic polymer layer (4) are an embedded dual-layer film. Compared with the prior art, the wafer has the advantages that the waveguide loss is greatly reduced, the waveguide performance is favorable, an LNOI material forms a current loop to play a very important role in convenience, and the feasibility of forming an optical or microelectronic device by the LNOI material is remarkably improved. By the wafer, integrated optical circuits and devices based on an LNOI platform are directly push to go forwards in a practical direction, and a support can be provided for development of a next-generation optoelectronic hybrid integrated chip.

Description

technical field [0001] The invention relates to the technical field of integrated optoelectronics, in particular to an LNOI wafer structure embedded with Au and a semiconductor organic polymer double-layer film and a manufacturing method thereof. Background technique [0002] Lithium niobate (LiNbO3) is currently known as the ferroelectric material with the highest Curie temperature (1210oC) and the largest spontaneous polarization (0.70C / m). And nonlinear optics and other characteristics, it is the ferroelectric material with the most photonics performance and the best comprehensive index that people have discovered so far, and is widely used in acoustics, optics, optical communication, optical integration and other fields. [0003] Microelectronics technology represented by VLSI has developed to a very high level. One of the directions to further improve the performance of integrated circuits is to introduce light with faster propagation speed and larger information capaci...

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Problems solved by technology

[0005] In order to solve the technical problems faced in the preparation process of LNOI optical waveguide in the prior art, the present invention proposes a kind of LNOI wafer embedded with double-layer film and its preparation method. The wafer structure adopts new insulating substrate material and composite structure , which solves the problem of constituting the current loop that restricts the periodic polarization of LNOI materials

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