Inline method of flexible copper indium gallium selenide thin film solar cell module

Abstract

The invention discloses a flexible copper indium gallium selenium thin film solar cell module inline method, comprising the following steps: step 1, etching at least one pretreatment channel on a transparent conductive layer by laser etching; the bottom surface of the pretreatment channel is the upper surface of the high-resistance layer; step 2, using laser etching to etch the first channel, the second channel, and the third channel on one side of each pretreatment channel; the first channel One side of the channel communicates with the pretreatment channel; the bottom surface of the first channel is the upper surface of the substrate; the second channel is located between the first channel and the third channel; the second channel The bottom surface of the channel is the upper surface of the back electrode layer; the bottom surface of the third channel is located between the upper surface of the high resistance layer and the upper surface of the back electrode layer; step 3, pouring into the first channel and the pretreatment channel and curing the insulating material; step 4, printing silver paste by screen printing and curing; step 5, curing the electrode material.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for inlining flexible copper indium gallium selenium thin film solar cell components. Background technique [0002] Flexible Copper Indium Gallium Selenium Cu(In,Ga)Se 2 (referred to as CIGS) thin-film solar cells have the characteristics of high mass specific power, rollable, flexible unfolding, and portability, and have a wide range of applications. [0003] In practical applications, the output voltage of solar cells is usually greater than the open-circuit voltage of a single cell. Separate a large-area thin-film solar cell into several independent sub-cells and connect them in series to obtain a higher output voltage. [0004] In the publicly available inline method of flexible copper indium gallium selenide thin film solar cell modules, either the process steps are interspersed between the three scribing lines, or the scribing process requires overlaying, whic...

AI Technical Summary

Problems solved by technology

[0004] In the publicly available inline method of flexible copper indium gallium selenide thin film solar cell modules, either the process steps are interspersed between the three scribing lines, or the scribing process requires overlaying, which will make accurate positioning difficult and the components will die. The area area increases, the light-receiving area decreases, and the photoelectric conversion efficiency decreases, and the production process steps are cumbersome and time-consuming, and the production efficiency is low

There are still many technical difficulties in using the all-laser method for depth selective etching to complete the three scribe lines, especially the first scribe line that acts as the bottom electrode of the segregation cell. The layer, absorbing layer and back electrode are all removed, exposing the substrate, and the laser scribing will cause melting. The material recrystallized after melting in the channel has good electrical conductivity, and it is very easy to cause the connection of the positive and negative electrodes of the sub-battery, causing a short circuit of the battery. or electric leakage, the reliability of the component preparation process is poor, and the production yield is low

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