GaN-based light-emitting diode epitaxial wafer and preparation method thereof

Abstract

The invention discloses a GaN-based light-emitting diode epitaxial wafer and a preparation method thereof, and belongs to the technical field of photoelectron manufacture. The epitaxial wafer comprises a substrate, a buffer layer, a non-doped GaN layer, an N-type contact layer, a stress release layer, an active layer, a P-type electron blocking layer and a P-type contact layer. The stress release layer, comprising a first sublayer, a second sublayer and a third sublayer, is arranged between the N-type contact layer and the active layer, wherein the second sublayer comprises InxGa1-xN layers and N-type doped second GaN layers laminated alternatively, so that the stress formed due to lattice mismatch of a bottom layer can be effectively released, the piezoelectric polarization effect is reduced, and anti-static performance and luminous efficiency of the epitaxial wafer are improved. The first sublayer, the second sublayer and the third sublayer are N-type doped layers, thereby facilitating current expanding, reducing resistance at the two sides of the stress release layer and increasing capacitance at the two sides of the stress release layer; and more electrons are accumulated, so that a better electron blocking effect is achieved, electric leakage channels are reduced, and furthermore, the antistatic capability is further improved.

Description

technical field [0001] The invention relates to the field of optoelectronic manufacturing technology, in particular to an epitaxial wafer and a preparation method of a gallium nitride-based light-emitting diode. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) has the advantages of small size, long life, low power consumption, etc., and is currently widely used in automobile signal lights, traffic signal lights, display screens and lighting equipment. [0003] During the growth process of epitaxial wafers of light-emitting diodes, stress often occurs due to lattice mismatch, resulting in poor crystal quality, decreased antistatic properties, and reduced luminous efficiency. In order to improve the antistatic properties and luminous efficiency of epitaxial wafers, a layer of InGaN shallow quantum wells is usually grown before growing the active layer to release the stress. [0004] However, InGaN shallow quantum wells can only reduce the lattice...

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Problems solved by technology

[0004] However, InGaN shallow quantum wells can only reduce the lattice mismatch between the active layer and cannot release the stress formed before the growth of InGaN shallow quantum wells, and the antistatic properties and luminous efficiency of epitaxial wafers are very limited.

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