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A broadband infrared filter for temperature detection and its preparation method

An infrared filter and broadband technology, which is applied in the field of infrared filters, can solve the problems of low passband transmittance, poor sensitivity, and insufficient cut-off band, and achieve simple process, meet performance requirements, and excellent signal-to-noise ratio Effect

Active Publication Date: 2018-11-06
镇江爱豪科思电子科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the 8000nm-13000nm broadband infrared filter currently used for temperature detection has a low passband transmittance, and the cutoff band is not wide enough, so the measurement accuracy, stability and anti-interference ability need to be improved, and the sensitivity is poor. , cannot meet the needs of market development

Method used

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  • A broadband infrared filter for temperature detection and its preparation method
  • A broadband infrared filter for temperature detection and its preparation method

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Embodiment 1

[0023] Such as figure 1 As shown, the broadband infrared filter for temperature detection provided in this embodiment is:

[0024] (1) Single crystal Si with a size of Φ50.8 is used as the substrate, the silicon is polished on both sides, the thickness is 300±10μm, and the crystal orientation .

[0025] (2) Select zinc sulfide ZnS and single crystal germanium Ge as coating materials, and deposit multilayer interference films on both surfaces of the substrate.

[0026] (3) One of the film system structure adopts: Sub / 0.2H (0.5LH0.5L) 7 0.2H0.2L0.42(0.5HL0.5H) 7 0.2L / Air, center wavelength λ 1 =15500nm.

[0027] (4) The structure of the other film system adopts: Sub / 0.45(HL) 7 0.7(HL) 8 (HL) 6 / Air, center wavelength λ 2 =4000nm.

[0028] The meanings of the symbols in the film system are: Sub is the substrate, Air is the air, H and L respectively represent a 1 / 4 wavelength optical thickness of the film layer Ge (high refractive index material layer) and the film layer ZnS (low refracti...

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Abstract

The invention relates to an infrared filter, in particular to a broadband infrared filter for temperature detection and a preparation method thereof. Single crystals Si are selected as a substrate material, and the refractive index n is equal to 3.42881; Ge is selected as a high refraction index material, and the refraction index n is equal to 4.16422; ZnS is selected as a low refraction index material, the refraction index n is equal to 2.2, and an intervening cut-off film system A-face film and an intervening cut-off film system B-face film are deposited on the two surfaces of the substrate respectively. According to the broadband infrared filter of 8,000 nm to 13,000 nm, the wave lengths of the two ends of a passband are located between 8,000+ / -1% nm and 13,000+ / -1% nm, the transmittance of a cut-off area is smaller than 0.12%, and the transmittance of a transmission area can reach 90% or above. The signal to noise ratio is greatly increased, other interference is inhibited well, and the precision and efficiency of instrument temperature detection are improved.

Description

Technical field [0001] The invention relates to an infrared filter, in particular to a broadband infrared filter for temperature detection and a preparation method thereof. Background technique [0002] Because infrared temperature measurement technology has the characteristics of fast response, accuracy, convenience and long service life, it has been widely used in metallurgy, electronics, petrochemical, transportation, energy, rubber, food and other industries. It has become a corporate fault detection, product quality control and An important means to improve economic efficiency. The main principle of infrared temperature measurement is to use any object to emit infrared radiation, so that it can be remote, non-contact, accurate, real-time, fast, and online monitoring and diagnosis of faults without power failure, sampling, and disassembly. At the same time, it can reduce the damage to equipment, avoid the loss caused by shutdown and production, save manpower and financial re...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B5/28
CPCG02B5/281G02B5/285
Inventor 刘桂武邵海成侯海港
Owner 镇江爱豪科思电子科技有限公司