Preparation method of adsorbent for trichlorosilane purification

A technology of trichlorosilane and adsorbent, which is applied in the field of preparation of adsorbent for trichlorosilane purification, can solve the problems of poor impurity removal effect, high production cost, complicated operation process and the like, achieves fast adsorption speed, Good effect, high purity effect

Inactive Publication Date: 2016-12-14
王金桢
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The existing trichlorosilane purification technology has the disadvantages of repeated purification, complex operation process, high production cost, and poor effect of removing impurities. The product purity needs to be improved

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] In 2000L reactor, add 1000Kg water, 100Kg styrene, 3Kg5-ethylidene-2-norbornene, 0.5Kg dicarbonyl bis(cyclopentadienyl)titanium, 0.5Kg potassium persulfate, 1Kg dodecyl Sodium benzenesulfonate, 0.03Kg 1-[1-[2-(7,10-dioxabicyclo[4.4.0]dec-1,3,5-trien-9-yl)-2-hydroxy-ethyl ]-4-piperidinyl]-3H-benzimidazol-2-one, 1Kg octadecyl vinyl ether, heated up to 100°C, reacted for 12 hours, filtered the product, and dried to obtain trichlorosilane purification Adsorbent.

Embodiment 2

[0024] Add 1000Kg water, 100Kg styrene, 1Kg5-ethylidene-2-norbornene, 0.1Kg dicarbonyl bis(cyclopentadienyl)titanium, 0.2Kg potassium persulfate, 0.5Kg dodecane in 2000L reactor Sodium phenylsulfonate, 0.01Kg1.5Kg1-[1-[2-(7,10-dioxabicyclo[4.4.0]dec-1,3,5-trien-9-yl)-2-hydroxyl -Ethyl]-4-piperidinyl]-3H-benzimidazol-2-one, 0.5Kg octadecyl vinyl ether, heated up to 80°C, reacted for 10h, filtered the product, and dried to obtain trichloro Adsorbent for hydrogen silicon purification.

Embodiment 3

[0026] In 2000L reactor, add 1000Kg water, 100Kg styrene, 5Kg5-ethylidene-2-norbornene, 1Kg dicarbonyl bis(cyclopentadienyl)titanium, 0.8Kg potassium persulfate, 1.5Kg dodecyl Sodium benzenesulfonate, 0.05Kg1.5Kg1-[1-[2-(7,10-dioxabicyclo[4.4.0]dec-1,3,5-trien-9-yl)-2-hydroxy- Ethyl]-4-piperidinyl]-3H-benzimidazol-2-one, 2Kg octadecyl vinyl ether, heat up to 110°C, react for 15 hours, filter the product, and dry to obtain trichlorosilane Adsorbent for purification.

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PUM

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Abstract

The invention provides a preparation method of an adsorbent for trichlorosilane purification, comprising: dispersing suitable styrene in water, adding 5-cyclohexylidene-2-norbornene, dicarbonyl bis(cyclopentadienyl) titanium, potassium persulfate, sodium dodecyl benzene sulfonate, 1-[1-[2-(7,10-diazabicyclo[4,4,0]deca-1,3,5-triene-9-yl)-2-hydroxyl-ethyl]-4-piperidinyl]-3H-benzimidazole-2-one, and octadecyl vinyl ether proportionally, heating, reacting at a suitable temperature, and after reacting, filter and drying a product to obtain the adsorbent for trichlorosilane purification.

Description

technical field [0001] The invention relates to a method for preparing an adsorbent, in particular to a method for preparing an adsorbent for purifying trichlorosilane. Background technique [0002] Trichlorosilane is the raw material for the manufacture of polysilicon. Polysilicon has semiconductor properties and is an extremely important excellent semiconductor material. It is widely used in the electronics industry to manufacture basic materials for semiconductor radios, tape recorders, refrigerators, color TVs, video recorders, and electronic computers. It is the electronic information basic material of semiconductor devices such as contemporary artificial intelligence, automatic control, information processing, and photoelectric conversion. However, trace impurities have a great impact on the quality of trichlorosilane products. [0003] CN104003402A discloses a method for purifying trichlorosilane. The method comprises the following steps: heating the crude trichloro...

Claims

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Application Information

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IPC IPC(8): C08F212/08C08F232/08C08F232/06C08F236/22C08F216/18B01J20/26C01B33/107
CPCC08F212/08B01J20/264C01B33/10784C08F232/08C08F232/06C08F236/22C08F216/18
Inventor 张玲
Owner 王金桢
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