Gallium nitride-based light-emitting diode and manufacturing method thereof

Abstract

The invention provides a gallium nitride-based light-emitting diode and a manufacturing method thereof, and provides a growth substrate; a light-emitting epitaxial layer is fabricated on the growth substrate, which sequentially includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer from bottom to top; Etch an opening structure from the second semiconductor layer, and extend to the first semiconductor layer, so that part of the first semiconductor layer is exposed; make a first metal electrode and a second metal electrode layer, respectively covering the exposed first semiconductor layer and the second On the semiconductor layer; make a metal adhesion layer, and form openings, which are respectively formed on the first metal electrode and the second metal electrode layer; deposit a semiconductor protective layer on the above structure, and form openings, exposing part of the metal adhesion layer And the surface of the metal electrode layer is used as the package wiring area.

Description

technical field [0001] The invention relates to a semiconductor element, in particular to a gallium nitride-based light-emitting diode and a manufacturing method thereof. Background technique [0002] In conventional LED chips, silicon dioxide (SiO 2 ) as the surface insulating layer, with chromium / platinum / gold (Cr / Pt / Au) metal stack as the electrode structure (such as figure 1 shown), or insert an aluminum (Al) reflectivity layer to form Cr / Al / Pt / Au as a reflective electrode structure. In this electrode structure, Au is used as the packaging wire metal, but Au and semiconductor protective layer materials (such as SiO 2 ) Poor adhesion, that is, SiO that is in contact with Au at the edge of the electrode during the process 2 The layer is easy to fall off, or it is pulled off by the pulling force during the packaging and bonding process, which cannot form an effective sidewall protection of the insulating layer, resulting in abnormalities such as Cr migration, Al oxidatio...

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Problems solved by technology

However, the high reliability of LED devices must be considered in combination with chip technology and packaging operations. This patent leaks Au as a surface electrode by etching Ti and W metals. If a dry etching process (ICP) is used, Au is easily damaged by etching and forms black on the surface. point, resulting in the package bonding gold wire not sticking abnormally, but the Au layer leaked from the side wall of the metal electrode still cannot be combined with SiO 2 The insulating layer is well adhered; on the other hand, the SiO 2 Attached to Ni metal, SiO is easily picked up by push and pull force during package bonding process 2 insulating layer, resulting in SiO 2 Shedding loses its protective effect, so the chip fails during use or aging, such as figure 2 shown

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