Preparation method of electronic-grade ultrafine composite silica micropowder for integrated circuit substrate

An integrated circuit-based, silicon micropowder technology, applied in the direction of circuit substrate materials, circuits, printed circuits, etc., to achieve the effects of improving compatibility, benefiting human health and environmental protection, and reducing production costs

Active Publication Date: 2016-12-21
JIANGSU NOVORAY NEW MATERIAL CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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  • Preparation method of electronic-grade ultrafine composite silica micropowder for integrated circuit substrate
  • Preparation method of electronic-grade ultrafine composite silica micropowder for integrated circuit substrate
  • Preparation method of electronic-grade ultrafine composite silica micropowder for integrated circuit substrate

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Embodiment 1

[0025] Embodiment 1, a preparation method of electronic-grade ultrafine composite silicon micropowder for integrated circuit substrate, the steps are as follows:

[0026] (1) Add fused silica micropowder with silicon dioxide content of more than 99.7%, particle size D50=3.6±0.3μm, D100≤14μm, add 150kg each time into a high-speed mixer, stir at high speed and heat up for 5 minutes, and then add emulsifying dispersant Hexa 450ml of base disilazane was stirred at high speed for 5min, the material was discharged through an 80-mesh vibrating screen, and passed through a 10,000Gs magnetic separator to remove metal impurities, and component A was prepared for use;

[0027] (2) Add the two products of 4-70 mesh alkali-free glass sand and alkali-free glass flakes with a length of not more than 0.50cm in a mass ratio of 1:2, at a feeding frequency of 6HZ, into a continuous running ball mill, and the grinding medium in the ball mill is: Alumina balls, the ratio is: ￠38:￠32:￠19=8:12:10, t...

Embodiment 2

[0029] Embodiment 2, a preparation method of electronic-grade ultrafine composite silicon micropowder for integrated circuit substrate, the steps are as follows:

[0030] (1) Add fused silica micropowder with silicon dioxide content of more than 99.7%, particle size D50=3.6±0.3μm, D100≤14μm, add 180kg each time into a high-speed mixer, stir at high speed and heat up for 5-10min, and then add emulsifying dispersant 550ml of hexamethyldisilazane was stirred at high speed for 10min, the material was discharged through an 80-mesh vibrating screen, and passed through a 10000Gs magnetic separator to remove metal impurities, and component A was prepared for use;

[0031] (2) Add the two products of 4-70 mesh alkali-free glass sand and alkali-free glass flakes with a length of not more than 0.50cm in a mass ratio of 1:2 and a feeding frequency of 10HZ into a continuous running ball mill. The grinding medium in the ball mill is: Alumina balls, the ratio is: ￠38:￠32:￠19=8:12:10, the tot...

Embodiment 3

[0033] Embodiment 3, a preparation method of electronic-grade ultrafine composite silicon micropowder for integrated circuit substrate, the steps are as follows:

[0034] (1) Add fused silica micropowder with silicon dioxide content of more than 99.7%, particle size D50=3.6±0.3μm, D100≤14μm, add 165kg each time into a high-speed mixer, stir at a high speed for 5-10min, and then add an emulsifying dispersant 500ml of hexamethyldisilazane was stirred at high speed for 8min, the material was discharged through an 80-mesh vibrating screen, and passed through a 10000Gs magnetic separator to remove metal impurities, and component A was prepared for use;

[0035] (2) Add the two products of 4-70 mesh alkali-free glass sand and alkali-free glass flakes with a length of not more than 0.50cm in a mass ratio of 1:2 and a feeding frequency of 8HZ into a continuous running ball mill. The grinding medium in the ball mill is: Alumina balls, the ratio is: ￠38:￠32:￠19=8:12:10, the total weight...

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Abstract

The present invention is a preparation method of electronic-grade ultrafine composite silicon micropowder for integrated circuit substrates. The steps are as follows: add molten silicon micropowder into a high-speed mixer to heat up at high speed, and then add emulsifying dispersant hexamethyldisilazane at high speed. Stir and pass through a magnetic separator to obtain component A; put the two products of non-alkali glass sand and non-alkali glass flakes into a continuous running ball mill at a mass ratio of 1:2 for grinding, and transport them to a high-speed classifier through airflow to obtain components B: Add the two products of components A and B into the two-dimensional mixer according to the mass ratio of 1.6-1.8:0.2, and run for 30-40 minutes; the composite silicon micropowder is obtained from the output. The product prepared by the method of the present invention effectively reduces the thermal expansion coefficient, water absorption rate, internal stress, shrinkage rate and low hardness of the board during the application process of the integrated circuit substrate, thereby improving the reliability, processing performance and stability of the large-scale integrated circuit substrate , reducing the production cost of the integrated circuit substrate.

Description

technical field [0001] The invention relates to a preparation method of silicon micropowder, in particular to a preparation method of electronic-grade ultrafine composite silicon micropowder for integrated circuit substrates. Background technique [0002] With the rapid development of microelectronics technology, integrated circuits have become one of the main driving forces of national economic development. The development of functions and environmental protection has put forward higher and higher heat resistance, high-speed signal transmission and high reliability requirements for large-scale integrated circuit substrates. With the full implementation of EU directives WEEE and RoHS, it marks that the global electronics industry has entered a lead-free era. As the main filler for integrated circuit substrates, traditional silica micropowder has been difficult to meet the requirements of low expansion coefficient, green environmental protection, low cost and low dielectric ...

Claims

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Application Information

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IPC IPC(8): H05K1/03H01L23/14H01L23/492
CPCH05K1/0306H01L23/14H01L23/492
Inventor 王松宪汪维桥
Owner JIANGSU NOVORAY NEW MATERIAL CO LTD
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