Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Graphene transfer method

A graphene and melting point technology, applied in the field of material science, can solve the problems of long time consumption, polymer residues, affecting the performance and application of graphene, and achieve the effect of simple conditions and overcoming uncontrollability.

Active Publication Date: 2017-01-04
WUHAN UNIV
View PDF3 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

PMMA and other pollutants remaining on graphene after transfer will affect the performance and application of graphene, and it takes a long time, and the growth substrate cannot be reused
At present, the commonly used transfer method is the bubbling method, but the graphene transferred by the bubbling method also has polymer residues.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Graphene transfer method
  • Graphene transfer method
  • Graphene transfer method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] Embodiment 1, fast slip transfer graphene

[0048] 1) Choose a thickness of 50 μm and a size of 1×1 cm 2 The tungsten sheet was used as the growth substrate (metal substrate), and ultrasonicated in acetone, ethanol, and ultrapure water for 20 minutes each.

[0049] 2) Place 20 mg gallium on a tungsten sheet under heating at 40 °C and make it adhere to it.

[0050] 3) In hydrogen gas (flow rate of 30 sccm) and argon gas (flow rate of 300 sccm), the growth substrate obtained in step 2) was heated from room temperature to the growth temperature of 1020 °C for 35 minutes in a tube furnace, and then the Carbon source methane (flow rate is 10 sccm), growth time is 70 min, and then cool down naturally, when the temperature drops to 700 °C, open the lid to cool down naturally, when the temperature is lower than 200 °C, turn off the hydrogen, when the temperature is lower than 100 °C Turn off the protective gas argon at °C, take out the sample, that is, obtain the single-layer...

Embodiment 2

[0054] Embodiment 2, fast slip transfer graphene

[0055] 1) Choose a thickness of 50 μm and a size of 1×1 cm 2 The tungsten sheet was used as the growth substrate (metal substrate), and ultrasonicated in acetone, ethanol, and ultrapure water for 20 minutes each.

[0056] 2) Place 20mg of gallium on a tungsten sheet under heating at 40 °C and make it adhere to it.

[0057] 3) In hydrogen gas (flow rate of 30 sccm) and argon gas (flow rate of 300 sccm), the growth substrate obtained in step 2) was heated from room temperature to the growth temperature of 1020 °C for 35 minutes in a tube furnace, and then the Carbon source methane (flow rate is 10 sccm), growth time is 70 min, and then cool down naturally, when the temperature drops to 700 °C, open the lid to cool down naturally, when the temperature is lower than 200 °C, turn off the hydrogen, when the temperature is lower than 100 °C Turn off the protective gas argon at °C, take out the sample, that is, obtain the single-lay...

Embodiment 3

[0060] Embodiment 3, fast slip transfer graphene

[0061] 1) Choose a thickness of 50 μm and a size of 1×1 cm 2 The molybdenum foil used as the growth substrate (metal substrate) was ultrasonicated in acetone, ethanol, and ultrapure water for 20 minutes each.

[0062] 2) Place 10 mg gallium on the molybdenum foil under heating at 40 °C and make it adhere to it.

[0063] 3) In hydrogen gas (flow rate of 30 sccm) and argon gas (flow rate of 250 sccm), the growth substrate obtained in step 2) was heated from room temperature to the growth temperature of 800 °C for 35 min in a tube furnace, and carbon Source methane (flow rate of 10 sccm), grow for 30 min, and then cool down naturally. When the temperature drops to 700 °C, open the lid to cool down naturally. When the temperature is lower than 200 °C, turn off the hydrogen, and when the temperature is lower than 100 °C At C, the protective gas argon is turned off, and the sample is taken out, that is, the single-layer graphene p...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a graphene transfer method and belongs to the technical field of material science. The graphene transfer method comprises 1, pretreating a high-melting point metal as a metal base, 2, putting a low-melting point metal or alloy on the metal base and carrying out heating to obtain a metal base with the low-melting point metal or alloy, 3, carrying out graphene growth to obtain a metal base with the graphene, and 4, putting the metal base with the graphene on a heating table, carrying out heating at a temperature higher than a melting point of a low-melting point metal or alloy, putting the target substrate on graphene to be transferred and slipping the graphene to the target substrate. The method is suitable for any substrate such as a silicon chip, quartz, hafnium oxide, beryllia and a plastic film. The method has a fast transfer speed, realizes thorough graphene transferring, has simple conditions, realizes recycle of a metal substrate and is especially suitable for industrial production.

Description

technical field [0001] The invention relates to the technical field of material science, in particular to a method for transferring graphene. [0002] Background technique [0003] In 2004, physicists Andre Heim and Konstantin Novoselov of the University of Manchester successfully obtained graphene in experiments. Graphene has attracted widespread attention in the scientific community due to its excellent properties, and has become a A hot area of ​​study in today's world. The first time people successfully separated graphene was the mechanical exfoliation method, which usually requires sticking tape to the graphite surface, and then using external force to peel off the graphene sheets attached to the tape; or rubbing the graphite surface with another material Graphite flakes are slid off the bulk graphite. This method of obtaining graphene has the advantages of simple process and low cost, making it a common method for preparing graphene. However, the size of graphene...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B31/04
Inventor 付磊卢文静王娇曾梦琪邵苗苗
Owner WUHAN UNIV
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com