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A LED epitaxial growth method matching azo film

A technology of epitaxial growth and thin film, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of high production cost, expensive price, and harmful to human body

Active Publication Date: 2018-11-02
XIANGNENG HUALEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the In 2 o 3 The price is expensive, which leads to high production costs; moreover, the In material is toxic and harmful to the human body during the preparation and application process; in addition, the atomic weight of Sn and In is large, and it is easy to penetrate into the substrate during the film formation process, poisoning the substrate Materials, especially in liquid crystal display devices, are seriously polluted

Method used

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  • A LED epitaxial growth method matching azo film
  • A LED epitaxial growth method matching azo film
  • A LED epitaxial growth method matching azo film

Examples

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Embodiment 1

[0052] The invention uses VEECO MOCVD to grow high-brightness GaN-based LED epitaxial wafers. Using high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 As N source, metal-organic source trimethylgallium (TMGa), metal-organic source triethylgallium (TEGa), trimethylindium (TMIn) as indium source, N-type dopant is silane (SiH 4 ), trimethylaluminum (TMAl) as the aluminum source, and the P-type dopant as magnesium dicene (CP 2 Mg), the substrate is (0001) sapphire, and the reaction pressure is between 100Torr and 1000Torr. The specific growth method is as follows (for the epitaxial structure, please refer to figure 1 ):

[0053] The present invention provides a method for growing an LED epitaxial contact layer matching an AZO thin film current spreading layer, which includes: step 101, processing the substrate; step 102, growing a low-temperature GaN nucleation layer; step 103, growing a high-temperat...

Embodiment 2

[0059] The invention uses VEECO MOCVD to grow high-brightness GaN-based LED epitaxial wafers. Using high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 As N source, metal-organic source trimethylgallium (TMGa), metal-organic source triethylgallium (TEGa), trimethylindium (TMIn) as indium source, N-type dopant is silane (SiH 4 ), trimethylaluminum (TMAl) as the aluminum source, and the P-type dopant as magnesium dicene (CP 2 Mg), the substrate is (0001) sapphire, and the reaction pressure is between 100Torr and 1000Torr. The specific growth method is as follows (for the epitaxial structure, please refer to figure 1 ):

[0060] 1. Treat the substrate, specifically:

[0061] H at 1050°C-1150°C 2 atmosphere, the sapphire is annealed and the substrate surface is cleaned.

[0062] 2. Growth of low-temperature GaN nucleation layer, specifically:

[0063] Cool down to 500°C-620°C, feed NH 3 and TMGa, ...

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Abstract

This application discloses a LED epitaxial growth method matching AZO membrane, which successively includes: disposing substrate, growing low temperature GaN nucleating layer, growing high temperature GaN buffer layer, growing non-doped u-GaN layer, growing stable doping amount n-GaN layer, growing multiple quantum well luminescent layer, growing p type LGaN layer, growing high temperature p type GaN layer, growing In Chi Ga1- ChiN:Zn / In Chi Ga1- ChiN:Si contact layer, lowering the temperature and cooling. For such plan, design the last outward contact layer of LED as In Chi Ga1- Chi N:Zn / In Chi Ga1- Chi N:Si structure to match ZnO:AL(AZO) transparent conducting thin film current expanding layer, which effectively decreases contact resistance so that it is beneficial to lower the working voltage of LED chips.

Description

technical field [0001] This application relates to the technical field of LED epitaxial design application, in particular, relates to an LED epitaxial growth method matching AZO film. Background technique [0002] With the development of semiconductor, computer, solar energy and other industries, a new functional material --- transparent conducting oxide film (transparent conducting oxide, referred to as TCO film) has emerged and developed. This kind of film has optoelectronic properties such as wide band gap, high light transmittance in the visible spectrum region and low resistivity, and has broad application prospects in the field of semiconductor optoelectronic devices, solar cells, flat-panel displays, and special function window coatings. Among them, the preparation technology is the most mature and the most widely used is In 2 o 3 Base (In 2 o 3 : Sn, referred to as ITO) film. However, due to the In 2 o 3 The price is expensive, which leads to high production c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/14H01L33/00
CPCH01L33/0075H01L33/14
Inventor 林传强徐平
Owner XIANGNENG HUALEI OPTOELECTRONICS
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