Driving circuit and driving circuit board

Abstract

The invention provides a driving circuit and a driving circuit board. The input end of the driving circuit is connected with a first node, and is used for inputting a group of pulse modulation signals; the first output end of the driving circuit is connected with a silicon carbide unipolar device, and is used for outputting a first path of driving signal; the second output end of the driving circuit is connected with a silicon bipolar device, and is used for outputting a second path of driving signal; the silicon carbide unipolar device is connected in parallel with the silicon bipolar device. In the driving circuit, specific pulse driving signals required by the silicon carbide unipolar device and the silicon bipolar device which are connected in parallel are implemented by a hardware circuit; compared with the prior art, the driving circuit and the driving circuit board have the advantages that a processing mode of a timing unit and a processor is adopted, so that burden of the processor is reduced, the design of a controller is simplified, and the system stability is improved.

Description

technical field [0001] The invention relates to the technical field of electronic circuits, in particular to a driving circuit and a driving circuit board. Background technique [0002] In the 1200V class, the power devices are mainly insulated gate bipolar transistors (IGBTs), which have the advantages of low cost, high power, and good switching characteristics. Silicon carbide (SiC) materials have the characteristics of large band gap, high breakdown electric field and high thermal conductivity. Compared with silicon (Si) materials, 4H-SiC can provide 3.3 times the thermal conductivity of the former and 2.5 times the former The saturated electron mobility and 10 times the breakdown electric field strength of the former are considered to be ideal materials for the preparation of high-temperature, high-frequency, and high-power devices. With the maturity of silicon carbide device manufacturing technology, silicon carbide metal field effect transistor (MOSFET) products of 12...

AI Technical Summary

Problems solved by technology

[0005] However, the simple parallel connection of Si IGBT and SiC MOSFET cannot give full play to the respective advantages of the devices, and appropriate special pulse width modulation forms such as figure 2 As shown, this type of PWM driving pulse requires the participation of the timer unit of the processor, which is similar to the way of adding a dead zone in the half-bridge drive, but it is different from the generation of the dead zone. It is more flexible and changeable, and cannot be used Conventional dead zone joining method

Moreover, since a hybrid device requires two irregularly modulated PWM signals, it will consume 2 advanced timing units of the processor, 4 timing units are required to form a half-bridge circuit, and 8 timing units are required for a two-phase full bridge and a three-phase full bridge respectively. 1 and 12 advanced timer units, when the hybrid device needs to be expanded in parallel, the required drive signal needs to be doubled, and since the conventional PWM signal dead zone addition method cannot be used, all these drive signals need a processor Participate in part of the calculation, which greatly consumes the computing resources of the processor, which is not conducive to the design of the controller

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