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Nanometer aperture structure based disordered gain medium preparing method

A gain medium and nano-porosity technology, applied in active medium materials, laser parts, electrical components, etc., can solve the problems of unfavorable large-scale promotion of nano-active optical devices, complex processes, expensive equipment, etc. Uniform appearance and low cost effect

Inactive Publication Date: 2017-01-11
FOSHAN UNIVERSITY
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Problems solved by technology

However, the equipment required by these technologies is expensive, costly, and complicated, which is not conducive to the large-scale promotion of nano-active optical devices, and the preparation process of nano-porous structures can solve the above problems

Method used

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  • Nanometer aperture structure based disordered gain medium preparing method
  • Nanometer aperture structure based disordered gain medium preparing method
  • Nanometer aperture structure based disordered gain medium preparing method

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Embodiment Construction

[0022] The preferred embodiments of the present invention will be described below in conjunction with the accompanying drawings. It should be understood that the preferred embodiments described here are only used to illustrate and explain the present invention, and are not intended to limit the present invention.

[0023] The preparation of disordered gain medium based on nanoporous structure, the specific steps are as follows:

[0024] 1. The diameter of the selected silicon wafer is 1 inch, and the crystal orientation is [111] type, indicating that the unevenness is less than 1 micron. Rinse the substrate repeatedly with deionized water to remove physically adsorbed dust on the substrate; boil the substrate in concentrated sulfuric acid to remove organic impurities and metal oxides on the surface of the substrate; repeatedly rinse the substrate with deionized water; Then ultrasonically clean with acetone to remove all kinds of grease; boil the substrate in ammonia water to r...

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Abstract

The invention provides a nanometer aperture structure based disordered gain medium preparing method, which adopts a simply operative spin coating and film forming method. In the method, methanol and THF are used as mixed solvent; PMMA and PS are used as film base materials. Through the spin-coating method, a phase separation structure is formed in the film. After removal of PS with selective solvent of cyclohexane, a two-dimensional disordered dielectric sample consisting of PMMA and air nanometer apertures is obtained. The nanometer aperture structure based disordered gain medium obtained by this method has uniform sized and good dispersion performance provided dispersion units. Through the change in preparing technology parameters to further control the parameters of the size, the shape, and the filling rate, it is possible to realize the control of random laser output modes.

Description

technical field [0001] The invention belongs to the technical field of preparation of organic nanomaterials, in particular to a preparation method of a disordered gain medium based on a nanoporous structure. Background technique [0002] Random laser refers to the stimulated emission phenomenon formed by the multiple scattering of photons in the disordered gain medium. Its oscillation mode is determined by the multiple scattering process and outputs a non-directional correlated light. Since the path of photons in the medium is random, the name "Random Laser" was first proposed in 1995. Subsequently, scientists from various countries have observed random laser radiation phenomena in various disordered gain media, and their understanding of the complex physical processes that occur in disordered gain media has gradually become clear. Due to its unique physical mechanism and wide application prospects, random laser has received extensive attention in the fields of laser physic...

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Application Information

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IPC IPC(8): H01S3/16
CPCH01S3/169
Inventor 吕健滔樊婷
Owner FOSHAN UNIVERSITY
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