Humidity sensor device based on perovskite nanosheet array and its preparation method

A nanosheet array, humidity sensor technology, applied in instruments, scientific instruments, measuring devices, etc., to achieve the effects of fast response speed, large specific surface area, and wide response range

Inactive Publication Date: 2020-04-07
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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However, most of these studies focus on iodine-based and bromine-based hybrid perovskite materials, while the systematic research and application of chlorine-based perovskite materials are rarely reported.

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  • Humidity sensor device based on perovskite nanosheet array and its preparation method
  • Humidity sensor device based on perovskite nanosheet array and its preparation method
  • Humidity sensor device based on perovskite nanosheet array and its preparation method

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Embodiment Construction

[0031] The present invention is a perovskite (CH 3 NH 3 PbCl x I 3-x ) A humidity sensing device of a nanosheet array and a preparation method thereof, including a substrate, a buffer layer, a perovskite grain layer, a perovskite nanosheet array, and an electrode. Among them, the buffer layer, the perovskite grain layer, the perovskite nanosheet array are arranged on the substrate, and the two ends are electrodes. The substrate of the present invention is a glass substrate, but not limited to a glass substrate; the buffer layer is poly 3,4-ethylenedioxythiophene-polystyrene sulfonic acid (PEDOT:PSS), which can be formed by the wettability of the precursor lead salt film. Good alternative materials; perovskite nanosheet arrays are lead acetate (PbAc 2 ) film placed in methyl ammonium chloride and methyl ammonium iodide (CH 3 NH 3 Cl x I 3-x ) in an isopropanol solution, and finally, electrodes are plated on both ends of the perovskite nanosheet array, not limited to sil...

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Abstract

The invention discloses a perovskite (CH3NH3PbClxI3-x) nanosheet array-based humidity sensor and a production method thereof. The production method comprises the following steps: carrying out a chemical solution reaction technology to form a buffer layer poly(3,4-ethylenedioxythiophene)-polystyrenesulfonate (PEDOT:PSS) on a glass substrate, drop-casting a lead acetate (PbAc2) film, placing the annealed PbAc2 film in a methylammonium chloride and methylammonium iodide (CH3NH3ClxI1-x) mixed isopropanol solution, and carrying out a reaction to prepare a perovskite nanosheet structure array; and annealing the produced nanosheet array, and carrying out vapor deposition of silver electrodes on two ends of the annealed nanosheet array through a hot evaporation technology in order to produce the perovskite humidity sensor. The production method has the advantages of low cost and simple process, and the perovskite nanosheet array-based humidity sensor has the advantages of high stability and sensitive response, and can be used to detect water vapor and other polar gases.

Description

technical field [0001] The invention relates to a humidity sensing device, in particular to a humidity sensing device of a perovskite nanosheet array and a preparation method thereof. Background technique [0002] Organic-inorganic hybrid perovskites (CH 3 NH 3 wxya 3 , X=Cl, Br, I) The carrier diffusion length of the material can reach the order of microns, and has long carrier lifetime, very high carrier mobility and strong wide band gap absorption, low Ur The Urbach energy indicates that the energy level disorder of the material is very low. These excellent photoelectric properties make it widely and in-depth research in the field of photoelectric conversion such as solar cells, light-emitting diodes, lasers and detectors. In addition, due to their novel photoelectric physical properties, nanomaterials have received continuous attention in recent years. Among them, perovskite nanostructures have higher stability, and luminescence based on perovskite quantum dots, nanow...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/12
CPCG01N27/121G01N27/125
Inventor 任宽宽曲胜春王智杰刘孔卢树弟岳世忠
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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