Semiconductor structure forming method

Abstract

The invention provides a semiconductor structure forming method which comprises the following steps: providing a substrate with a well region, wherein a first type of ions are disposed in the well region; using a first anti-punch-through-injection process to inject the first type of ion into the well region wherein the depth of the first anti- punch-through injection process is less than the distance from the bottom of the well region to the top surface of the substrate, forming an anti-punch-through region in the well region; using a second anti- punch-through-injection process to inject carbon ions into the well region to form a carbon doped region in the well region wherein the doped concentration of the carbon ions is greater than that of the first type of ion in the anti-punch-through region and the carbon doped region surrounds the anti-punch-through region; and using a third anti-punch-through-injection process to inject nitrogen ions into the well region wherein the third anti-punch-through-injection depth is less than those of the first anti- punch-through -injection and the second anti-punch-through-injection, forming a nitrogen doped region between the anti- punch-through regions and the top part of the substrate. According to the semiconductor structure forming method, it is possible to improve the performances of a semiconductor device.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing towards higher element density and higher integration. As the most basic semiconductor device, transistors are currently being widely used. Therefore, with the increase of component density and integration of semiconductor devices, the gate size of planar transistors is getting shorter and shorter. The ability of traditional planar transistors to control channel current Weakened, resulting in short channel effect, resulting in leakage current, and ultimately affecting the electrical performance of semiconductor devices. [0003] In order to overcome the short-channel effect of the transistor and suppress the leakage current, a Fin Field Effect Transistor (Fin FET) is proposed i...

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Problems solved by technology

[0004] However, as the size of semiconductor devices shrinks and the degree of integration increases, the feature size of FinFETs also shrinks accordingly, making the short channel of FinFETs increasingly serious and poor in performance.

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