Improved method of semiconductor integrated general operational amplifier without resistor and amplifier thereof

An operational amplifier, semiconductor technology, applied in differential amplifiers, DC-coupled DC amplifiers, improving amplifiers to reduce temperature/power supply voltage changes, etc., can solve problems affecting circuit function and performance, large chip area, and power consumption, etc. Achieve the effects of improved security, increased integration density, and reduced power consumption

Pending Publication Date: 2017-03-08
贵州煜立电子科技有限公司
View PDF11 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Resistive elements in integrated circuits occupy a large chip area, generate power consumption (especially static power consumption), poor precision, and current changes caused by power supply voltage fluctuations, thereby affecting circuit functions and performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Improved method of semiconductor integrated general operational amplifier without resistor and amplifier thereof
  • Improved method of semiconductor integrated general operational amplifier without resistor and amplifier thereof
  • Improved method of semiconductor integrated general operational amplifier without resistor and amplifier thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.

[0023] Such as figure 1 As shown, according to the general operational amplifier principle and composition structure, the non-resistive semiconductor integrated general operational amplifier of the present invention is composed of a pre-stage, an intermediate stage, and a final stage circuit. according to Figure 1-Figure 5 The circuit structure of the preamplifier, figure 1 : J1, J2, Q3, Q4 form a source follower-common base differential amplifier, J1, J2 are JFETs with high input impedance (10MΩ). figure 2 : Q1, Q2, Q3, and Q4 form an emitter follower-common base differential amplifier. CRD1 and CRD2 are used as the active load of the pre-stage output to obtain high gain; CRD3 is the fixed current bias of the pre-stage.

[0024] intermediate stage amplifier, figure 1 From Q3, Q4, Q5, Q6 ( figure 2 Middle Q5, Q6, Q7, Q8) form a Darlin...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an improved method of a semiconductor integrated general operational amplifier without a resistor and an amplifier thereof. A two-terminal device CRD (Current Regulator Diode), which is compatible with a bipolar process, directly replaces all kinds of constant current source circuits which are always used currently in a circuit. The semiconductor integrated general operational amplifier without the resistor is composed of a pre-stage circuit, an intermediate-stage circuit and a final-stage circuit. No resistance elements exist in a new circuit, and the whole circuit is simple in structure, standard in form, the pre-stage circuit and the intermediate-stage circuit are symmetric, the number of used components is greatly reduced, the size of a CRD device is much smaller than that of an integrated resistor, the integration density is improved and the power consumption is reduced; no negative feedbacks exist in the whole circuit, and the transient response of the circuits is improved greatly; and for final output, over-current protection is not required, so that even if an output end is short-circuited, the whole circuit is not damaged, thereby improving the security.

Description

technical field [0001] The invention relates to a novel general operational amplifier integrated circuit device based on the principle of semiconductor integrated circuit technology, in particular to an improved method and an amplifier for a non-resistive semiconductor integrated general operational amplifier. Background technique [0002] A general-purpose operational amplifier is a widely used analog integrated circuit. The core devices widely used in this type of integrated circuits are bipolar transistors (bipolar technological process) and MOS transistors (MOS technological process). Among them, the bipolar transistor is a current-controlled device, and a resistor is required in the circuit to limit and control the current. Even though MOS transistors are voltage-controlled devices, it is inevitable to use resistors in the circuit to achieve reasonable bias and load. [0003] The design and use of resistors in analog integrated circuits has become the norm in this fie...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/30H03F3/45
Inventor 刘桥
Owner 贵州煜立电子科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap