Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A method for realizing isolation of semiconductor devices

A device isolation and semiconductor technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of voids or cracks in trenches, high side profile requirements, etc., and achieve fast filling rate, excellent gap filling ability, low cost effect

Active Publication Date: 2019-04-02
PEKING UNIV
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, HARP-SACVD has high requirements on the filled side profile. Unideal side profiles such as U-shaped grooves will cause voids or cracks inside the grooves. These deficiencies are difficult to improve by improving process conditions

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for realizing isolation of semiconductor devices
  • A method for realizing isolation of semiconductor devices
  • A method for realizing isolation of semiconductor devices

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0045] The present invention will be described in detail below in conjunction with the accompanying drawings and specific examples.

[0046] Isolation of nanoscale silicon-based devices can be achieved according to the following steps:

[0047] 1) ALD on (100) bulk silicon substrate SiO 2 , Si 3 N 4 The stacked structure acts as a hard mask layer, such as figure 1 shown;

[0048] 2) Electron beam lithography defines the pattern of the active region, wherein the line width is 40nm, the minimum line spacing is 30nm, and the maximum line spacing is 0.5μm. Such as figure 2 shown;

[0049] 3) Anisotropically etching the hard mask layer, transferring the pattern defined by photolithography to the hard mask, exposing the silicon substrate;

[0050] 4) Remove the photoresist, such as image 3 shown;

[0051] 5) Anisotropic dry etching of silicon Transfer the pattern of the hard mask to the silicon substrate to form the active area of ​​the silicon, such as Figure 4 ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for achieving isolation of a semiconductor device. According to the method, a thermal oxidation technology is combined with a deposition technology; an active region of the semiconductor device is firstly formed; a high depth-to-width ratio gap is filled to form narrow STI isolation; and a low depth-to-width ratio gap is finally filled to form wide STI isolation. The method has the advantages that the method has excellent gap filling ability for a micron-scale gap or the high depth-to-width ratio gap with a sub-45nm technology node, the filling quality is good and no hole or crack is generated; the filling rate is high, stable and controllable; an etching damage of an HDP-CVD to a substrate is avoided; and the method does not depend on the shape and form of the section of the gap, and is completely compatible with a bulk silicon CMOS process, simple in process and low in cost.

Description

technical field [0001] The invention belongs to the technical field of ultra-large-scale integrated circuit manufacturing, and relates to a method for realizing the isolation of semiconductor devices in integrated circuits. Background technique [0002] The different technological eras of integrated circuits are marked by the characteristic dimensions of the devices they process. With the rapid development of the integrated circuit industry, the characteristic dimensions of semiconductor devices have shrunk from the submicron scale to the nanometer scale. Correspondingly, the spacing between devices also become very small. In Intel's 14nm node process, the spacing between Fin bars is only 42nm. Filling such narrow gaps with high aspect ratios to form device isolation is a great challenge to traditional chemical vapor deposition (CVD). [0003] Since the traditional CVD method has a faster filling rate at the top of the gap than in the middle of the gap, when filling a high ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/762
CPCH01L21/762H01L21/76202H01L21/76224
Inventor 黎明陈珙杨远程樊捷闻张昊黄如
Owner PEKING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com