Lead process array etching method

Abstract

The invention discloses a lead process array etching method comprising the following steps: using a metal etching liquid to etch metal multilayer films; removing metal residuals; etching a semiconductor layer. The method can prevent metal residuals so as to solve N+ residual problems, and thus improving product yield rate.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a wire process array etching method. Background technique [0002] The microcircuits of semiconductor devices and liquid crystal display devices are formed on the substrate by conductive metal films such as aluminum, aluminum alloys, copper and copper alloys, or insulating films such as silicon dioxide films and silicon nitride films, and uniformly apply photolithography. Then through the patterned film, image after light irradiation, image the required pattern photoresist, use dry etching or wet etching, and display the pattern on the metal film or insulating film under the photoresist, It is completed by a series of photolithography processes such as stripping and removing unnecessary photoresist. [0003] Among them, the metal used for the source / drain, especially copper alloy, has low impedance and no environmental problems compared with the aluminum chrome wiring in the pr...

AI Technical Summary

Problems solved by technology

However, new metals also have some problems. For example, copper has low adhesion to glass substrates and insulating films, and is easy to diffuse into silicon oxide films. Therefore, titanium, molybdenum, etc. are usually used as the lower film metal to form metal multilayer film

[0004] After adopting the metal multilayer film, the manufacture of the Harima transistor has the problem of low yield rate, which brings troubles to those skilled in the art.

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