A kind of porous film electrode material and preparation method thereof
A technology of electrode material and porous film, applied in the field of porous film electrode material and its preparation, and porous film negative electrode material, can solve the problems of high cost, complex preparation of nanostructures, poor cycle performance of lithium-ion battery negative electrode, etc., to achieve easy operation and simplification The method of preparation, the effect of facilitating quality control
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[0036] The preparation method of the porous film electrode material of lithium ion battery in the present invention generally comprises the following steps:
[0037] (a) Disperse the silicon powder in a certain amount of ethanol, and process it with ultrasonic stirring to form a homogeneous liquid A;
[0038](b) dissolving the organic polymer (such as polymethyl methacrylate PMMA) in an organic solvent (dimethylformamide DMF) to form a homogeneous solution B;
[0039] (c) uniformly mixing a certain proportion of A and B to form a uniform liquid C, and ultrasonically stirring for a certain period of time;
[0040] (d) Add a certain amount of GO solution into C, and ultrasonically disperse to form a homogeneous liquid D;
[0041] (e) Pour the homogeneous liquid D into a petri dish, and dry it in a blast drying oven to form a thin film. The temperature of the drying oven is 40-200°C;
[0042] (f) Sintering the film obtained above in an inert atmosphere at a temperature of 100-1...
Embodiment 1
[0047] Weigh 54mg of Si powder and ultrasonically disperse it into 20mL ethanol to form solution A, dissolve 17mg PMMA into 10mL DMF to form solution B, mix the above solutions A and B evenly to form solution C, and uniformly mix 54mg GO aqueous solution with solution C to form solution D. Pour solution D into a petri dish, put it in an oven at 80°C and dry it to obtain a film, and put the obtained film in Ar / H 2 , heat treatment at 500 °C to obtain porous Si@rGO films.
Embodiment 2
[0049] Weigh 54mg of Si powder and ultrasonically disperse it into 20mL ethanol to form solution A, dissolve 11mg PMMA into 10mL DMF to form solution B, mix the above solutions A and B evenly to form solution C, and uniformly mix 54mg GO aqueous solution with solution C to form solution D. Pour solution D into a petri dish, put it in an oven at 80°C and dry it to obtain a film, and put the obtained film in Ar / H 2 , heat treatment at 500 °C to obtain porous Si@rGO films.
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