A mems infrared light source and manufacturing method thereof

A technology of an infrared light source and a manufacturing method, which is applied in the field of infrared light sources, can solve the problems of small temperature measurement range, poor linearity, and large influence, and achieves a large temperature measurement range, improved detection accuracy and resolution, and mature production technology Effect

Active Publication Date: 2019-02-05
SOI MICRO CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In view of this, the present invention provides a MEMS infrared light source and its manufacturing method to solve the problem of poor linearity, small temperature measurement range and low precision when the infrared light source integrates the temperature sensor on the chip of the infrared light source in the prior art. Poor and greatly affected by the external environment

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A mems infrared light source and manufacturing method thereof
  • A mems infrared light source and manufacturing method thereof
  • A mems infrared light source and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0059] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0060] An infrared light source provided in the prior art, a patterned first metal film is made on the support film as a temperature sensor, and two points distributed at both ends are used as output lead points; a patterned second metal film is made on the insulating layer As a heating source, the two points distributed up and down serve as connection points. The infrared light source chip adopts a temperature sensor composed of a platinum wire thermistor, wh...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an MEMS (Microelectromechanical systems) infrared source and a manufacture method thereof, wherein the MEMS infrared source comprises a substrate, a support layer, a metal electrode, a thermocouple bar structure layer, a heating resistor layer, an isolation protective layer and a radiating layer; the thermocouple bar structure layer forms, in an infrared source internal chip, a thermopile coupled temperature sensor, and the thermopile coupled temperature sensor is used to monitor radiation temperature changes of the infrared source in real time; as the manufacture process of the thermopile coupled temperature sensor is mature, measuring precision is high, a temperature measuring range is wide, high sensitivity and stability are achieved, detection precision and resolution of an NDIR (non-dispersive infrared) system can be effectively improved, and the applicable prospect in the field of NDIR gas sensing is promising; as each of the structures of the MEMS infrared source can be made by using CMOS (complementary metal oxide semiconductor) or MEMS technology, it is convenient for the source to be compatible with the manufacture technology of the MEMS infrared source internal chip, and the difficulty in the manufacture technology of the MEMS infrared source is relieved.

Description

technical field [0001] The invention relates to the technical field of infrared light sources, in particular to a MEMS (Micro Electro Mechanical Systems, Micro Electro Mechanical Systems) infrared light source and a manufacturing method thereof. Background technique [0002] Infrared technology is widely used in national defense, information technology and communication, pollution monitoring, temperature control, medicine and other fields. As an important part of the application of infrared technology, the research of infrared light source has received more and more attention. An important application of infrared light sources is infrared gas sensors. [0003] At present, MEMS infrared light sources are widely used in NDIR (non-dispersive infrared, non-dispersive infrared) systems, heating the black body radiation layer by heating the Joule heat generated by the heating resistor, so that the black body radiation layer emits thermal radiation infrared light, infrared light ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): B81B7/02B81C1/00
CPCB81B7/02B81B2201/0292B81C1/00023
Inventor 明安杰刘卫兵孙西龙毛海央陈大鹏
Owner SOI MICRO CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap