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Preparation method of silicon nitride ceramic substrate

A technology of silicon nitride ceramics and silicon nitride powder is applied in the field of preparation of silicon nitride ceramic substrates, which can solve the problems of high cost of silicon nitride substrates, affecting product yield and high local temperature, and improving performance and yield. , The effect of avoiding product cracks and slowing down the reaction speed

Inactive Publication Date: 2017-05-10
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above existing technologies all use air pressure or hot pressing sintering, and the raw material is silicon nitride powder, which makes the cost of silicon nitride substrate high
In order to reduce production costs, under the premise of ensuring mechanical properties and thermal conductivity, low-cost high-purity silicon powder can be used as the main raw material, and silicon nitride ceramics can be prepared by sintering in a flowing nitrogen atmosphere. In the substrate process, silicon nitride substrates are prepared by silicon powder tape casting and high-temperature nitriding, which is prone to melting silicon due to excessive local temperature due to exothermic reactions, which affects the yield of products

Method used

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  • Preparation method of silicon nitride ceramic substrate
  • Preparation method of silicon nitride ceramic substrate

Examples

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Effect test

Embodiment 1

[0032] The preparation method of silicon nitride ceramic substrate is as follows:

[0033] A: 15.75g silicon powder (median particle size is 10μm), 68.25g silicon nitride powder (median particle size is 0.2μm), 5.7g zirconia powder (ZrO 2 ), 2g magnesium oxide powder (MgO) and 8.3g gadolinium oxide powder (Gd 2 o 3 ) mixes, adds 1.68g castor oil, then adds 120g dehydrated alcohol-butanone mixed solvent (the mass ratio of dehydrated alcohol and butanone is 1:2), carries out ball milling for the first time with silicon nitride ball as ball milling medium, The ball milling rate is 80 rpm, the time is 24h; then add 4.2g adhesive polyvinyl butyral and 6.72g plasticizer for the second ball milling, the ball milling rate is 80 rpm, the time is 24h, wherein , the plasticizer is dioctyl sebacate and diisobutyl phthalate with a mass ratio of 1:1. After the ball milling is completed, it is defoamed under the condition of a vacuum of 0.1Pa to obtain a dynamic viscosity of 3000mPa at 25°...

Embodiment 2

[0038] The preparation method of silicon nitride ceramic substrate is as follows:

[0039] A: 47.25g silicon powder (median particle size is 6.5μm), 36.75g silicon nitride powder (median particle size is 0.2μm), 5.7gZrO 2 powder, 2g MgO powder and 8.3g Gd 2 o3 Powder mixing, add 1.68g castor oil, then add 150g dehydrated alcohol-butanone mixed solvent (the mass ratio of dehydrated alcohol and butanone is 1:2), carry out ball milling for the first time with silicon nitride ball as ball milling medium, The ball milling rate is 100 rpm, the time is 20h; then add 14.28g adhesive polyvinyl butyral and 10.5g plasticizer for the second ball milling, the ball milling rate is 100 rpm, the time is 24h, wherein , the plasticizer is dioctyl sebacate and diisobutyl phthalate with a mass ratio of 1:1. After the ball milling is completed, it is defoamed under the condition of a vacuum of 0.1Pa to obtain a dynamic viscosity of 20000mPa at 25°C. S slurry, the dynamic viscosity at 25°C is mea...

Embodiment 3

[0044] The preparation method of silicon nitride ceramic substrate is as follows:

[0045] A: 47.25g silicon powder (median particle size is 6.5μm), 36.75g silicon nitride powder (median particle size is 0.2μm), 5.7gZrO 2 powder, 2g MgO powder and 8.3g Gd 2 o 3 Powder mixing, add 1.68g castor oil, then add 150g dehydrated alcohol-butanone mixed solvent (the mass ratio of dehydrated alcohol and butanone is 1:2), carry out ball milling for the first time with silicon nitride ball as ball milling medium, The ball milling rate is 100 rpm, the time is 20h; then add 14.28g adhesive polyvinyl butyral and 10.5g plasticizer for the second ball milling, the ball milling rate is 100 rpm, the time is 24h, wherein , the plasticizer is dioctyl sebacate and diisobutyl phthalate with a mass ratio of 1:1. After the ball milling is completed, it is defoamed under the condition of a vacuum of 0.1Pa to obtain a dynamic viscosity of 30000mPa at 25°C. S slurry, the dynamic viscosity at 25°C is m...

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Abstract

The invention discloses a preparation method of a silicon nitride ceramic substrate. The preparation method comprises steps as follows: silica powder, silicon nitride powder, a sintering aid and a dispersing agent are mixed, a solvent is added, all components are subjected to ball milling for the first time, then an adhesive and a plasticizer are added, all components are subjected to the ball milling the second time and subjected to vacuum defoamation, slurry is obtained, and a mass ratio of the silica powder to the silicon nitride powder is (1:10)-(10:1); the slurry is subjected to tape casting and dried, a biscuit is obtained and subjected to vacuum adhesive discharging, and a green body is obtained; the green body is sintered, and the silicon nitride ceramic substrate is obtained. The silicon nitride powder and the cheap silica powder are adopted as main raw materials, the silicon nitride ceramic substrate is prepared with a tape casting technology, and the silicon nitride ceramic substrate with low cost and excellent comprehensive performance is obtained.

Description

technical field [0001] The invention belongs to the technical field of ceramic substrate materials, and relates to a preparation method of a silicon nitride ceramic substrate. [0002] technical background [0003] Semiconductor power modules are one of the most important power devices in the field of power electronics, and are used in electric vehicles, rail transit and other fields. Among them, the copper-clad substrate used to package the power module is an indispensable key basic material, and the insulating layer in the copper-clad substrate is usually a ceramic material. At present, the widely used insulating substrate materials are mainly alumina and aluminum nitride, but the bending strength and fracture toughness of alumina and aluminum nitride ceramic substrates are relatively low, which makes it easy to Cracking affects the reliability of the entire power module. At the same time, when the semiconductor power module is used on mobile facilities with frequent vibra...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/584C04B35/65
CPCC04B35/584C04B35/591C04B35/65C04B2235/6562C04B2235/6565C04B2235/6567C04B2235/6586C04B2235/96C04B2235/9607
Inventor 黄荣厦李文杰吴有亮叶顺达林华泰
Owner GUANGDONG UNIV OF TECH
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