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Method for preparing silicon dioxide passivation layer through thermal decomposition

A silicon dioxide and passivation layer technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, climate sustainability, etc., can solve the problem of large thermal damage to silicon wafers, high energy consumption, and expensive growth and deposition equipment for alumina and other problems to achieve the effect of preventing falling off, improving binding force and stability, and promoting compatibility

Active Publication Date: 2017-05-10
EGING PHOTOVOLTAIC TECHNOLOGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Current research shows that silicon dioxide and aluminum oxide are the best rear passivation materials, but traditional silicon dioxide needs to be formed by high-temperature thermal oxidation of silicon wafers, which requires high energy consumption and requires at least a heating temperature of 650°C, which is harmful to silicon wafers. The thermal damage itself is relatively large, and the growth and deposition equipment of alumina is also very expensive

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] Using the scheme of this application, carry out passivation treatment on silicon wafers with the same material and specifications as those in the above-mentioned blank control, and the specific operations are as follows:

[0015] (1) Metasilicate (H 2 SiO 3 ), shellac, and ethanol are mixed according to the mass ratio of 1:8:4 and then fully stirred to obtain a viscous glue;

[0016] (2) Apply the viscous glue obtained in step (1) evenly on the surface of the diffused silicon chip and fully dry it at 80°C, then place the silicon chip in a nitrogen atmosphere at 350°C for 22 minutes, Natural cooling is to complete the passivation of the silicon wafer surface.

Embodiment 2

[0024] Using the scheme of this application, carry out passivation treatment on silicon wafers of the same material and specifications as in the blank control, the specific operations are:

[0025] (1) Metasilicate (H 2 SiO 3 ), shellac, and ethanol are mixed according to the mass ratio of 1:6:6 and then fully stirred to obtain a viscous glue;

[0026] (2) Apply the viscous glue obtained in step (1) evenly on the surface of the diffused silicon chip and fully dry it at 80°C, then place the silicon chip in a nitrogen atmosphere at 320°C for 24 minutes, Natural cooling is to complete the passivation of the silicon wafer surface.

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Abstract

The invention belongs to the field of new energy, and particularly relates to a method for preparing a silicon dioxide passivation layer through thermal decomposition. The method comprises the steps of evenly brushing a viscous glue solution which is mixing mixture of metasilicic acid, shellac and a diluent on the surface of a diffused silicon wafer, drying, putting the silicon wafer into a high-temperature inert gas environment for a period of time, thus completing passivation of the surface of the silicon wafer. The compatibility of silicon dioxide obtained through metasilicic acid decomposition and a silicon wafer substrate is promoted by the shellac in the heat decomposition process, falling of the generated silicon dioxide is prevented, and the binding force and the stability of the passivation layer are improved.

Description

technical field [0001] The invention belongs to the field of new energy, and in particular relates to a method for preparing a silicon dioxide passivation layer by pyrolysis. Background technique [0002] A solar cell is a semiconductor device that can convert the sun's light energy into heat energy. Since it does not need water, oil, fuel and other resources when working, it only needs light to generate electricity, so it is called contemporary clean and pollution-free renewable energy. resources, and the installation and maintenance are simple, long service life, unattended, and more and more widely used in various fields. [0003] Due to the existence of a large number of surface defects in polycrystalline silicon solar cells, the performance of the cells is affected. In order to obtain higher photoelectric conversion efficiency, it is necessary to perform a silicon dioxide passivation process on the surface of the cells. Current research shows that silicon dioxide and a...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0216
CPCH01L31/02167H01L31/1868Y02P70/50
Inventor 孙铁囤汤平姚伟忠
Owner EGING PHOTOVOLTAIC TECHNOLOGY CO LTD