A kind of giant dielectric low-loss CCTO-based ceramic material and preparation method thereof

Abstract

The invention relates to a CaCu3Ti4O12-based ceramic dielectric material with giant dielectric constant and low dielectric loss. The CaCu3Ti4O12-based ceramic dielectric material with giant dielectric constant and low dielectric loss consists of a main material and a grain boundary layer modifier M. The chemical composition of the main material is Ca1-xAxCuyTi4-zBzO12, wherein an A-bit doping element is one or more of Mg, La, Cr and Ni and replaces Ca; a B-bit doping element is one or more of Al, Zr, Nb and Ta and replaces Ti; x is greater than or equal to 0 and smaller than or equal to 0.2; y is greater than or equal to 2.9 and smaller than or equal to 3.1; and z is greater than or equal to 0 and smaller than or equal to 0.3. The grain boundary layer modifier M is a combination of one or more of the following components in parts by mass: 0-10 parts of SiO2, 0-5 parts of Bi2O3, 0-6 parts of ZnO, 0-5 parts of CaTiO3 and 0-5 parts of MgTiO3. By A-bit and B-bit co-doping and a grain boundary layer modification, the dielectric constant of the material is improved, and the dielectric loss is reduced.

Description

technical field [0001] The invention relates to the technical field of dielectric materials, in particular to a CaCu material with a giant dielectric constant and low dielectric loss 3 Ti 4 o 12 Base ceramic materials and methods for their preparation. Background technique [0002] In recent years, with the development of the electronic information industry, higher and higher requirements have been put forward for the miniaturization, high performance and integration of electronic components. The development and research of ultra-high dielectric constant materials is of great significance for the miniaturization of capacitors, resonators, filters and memories. Calcium copper titanate (CaCu 3 Ti 4 o 12 , referred to as CCTO) has a perovskite-like structure and is a kind of ultra-high dielectric constant (>10 4 ) dielectric material, and the high dielectric constant has a very small temperature dependence, and its dielectric constant is close to a constant from room ...

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Problems solved by technology

From the results, the single A-site or B-site doping either does not achieve the purpose of reducing the dielectric loss to a sufficient extent, or obviously damages the original ultra-high dielectric constant characteristics of CCTO ceramics, resulting in the dielectric loss of the modified material. very low electrical constant

For example Hu et al. (Hu Y, Jeng T S, Liu J S, Effect of the MgOsubstitution for CuO on the properties of CaCu 3 Ti 4 o 12 ceramics, CeramicsInternational, vol38, p3459-3464, 2012) Using Mg for A-site doping increases the dielectric constant while significantly increasing the dielectric loss

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