Low-melting-point inorganic binder slurry for aluminum material, and preparation method of low-melting-point inorganic binder slurry

An inorganic binder, low melting point technology, applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve problems such as large expansion coefficient, high softening temperature, poor dielectric properties, etc., and achieve high printing Accuracy, the effect of meeting the printing accuracy

Inactive Publication Date: 2017-05-17
DONGGUAN COREHELM ELECTRONICS MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the glass frits currently produced on the market mainly have the following problems: 1. High softening temperature; 2. Excessive expansion coefficient; 3. Poor dielectric properties

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Embodiment 1, a low-melting-point inorganic binder slurry for aluminum substrates, including the following materials by weight, specifically:

[0025] SiO 2 -Bi 2 o 3 -B 2 o 3 -Al 2 o 3 Low melting point inorganic binder 65%

[0026] Nano-alumina inorganic additive 5%

[0027] Organic phase 30%.

[0028] Among them, the particle size range of the low-melting inorganic binder is 0.5μm-3μm, the softening temperature is about 350°C, and the melting temperature is 400-500°C; the particle size range of the nano-alumina inorganic additive is 5-50nm.

[0029] In addition, for the organic phase, it contains: solvent (terpineol 15%, diethylene glycol butyl ether acetate 5%, dibutyl phthalate 6%); resin (ethyl cellulose 3%); Organic additives (leveling agent 0.5%, defoamer 0.4%, surfactant 0.1%).

[0030] It should be further pointed out that the low-melting-point inorganic binder slurry for aluminum substrates in Example 1 can be prepared by the following preparation m...

Embodiment 2

[0033] Embodiment 2, a low-melting-point inorganic binder slurry for aluminum substrates, including the following materials by weight, specifically:

[0034] SiO 2 -Bi 2 o 3 -B 2 o 3 -Al 2 o 3 Low melting point inorganic binder 75%

[0035] Nano-alumina inorganic additive 2%

[0036] Organic phase 22%.

[0037] Among them, the particle size range of the low-melting inorganic binder is 0.5μm-3μm, the softening temperature is about 350°C, and the melting temperature is 400-500°C; the particle size range of the nano-alumina inorganic additive is 5-50nm.

[0038]In addition, for the organic phase, it contains: solvent (terpineol 12%, diethylene glycol butyl ether acetate 3.5%, dibutyl phthalate 4%); resin (ethyl cellulose 2%); Organic additives (leveling agent 0.3%, defoamer 0.2%, surfactant 0.1%).

[0039] It should be further pointed out that the low-melting-point inorganic binder slurry for aluminum substrates in Example 2 can be prepared by the following preparation ...

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PUM

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Abstract

The invention discloses low-melting-point inorganic binder slurry for an aluminum material, and a preparation method of the low-melting-point inorganic binder slurry. The low-melting-point inorganic binder slurry comprises materials with the following parts by weight: 60-85% of SiO2-Bi2O3-B2O3-Al2O3 low-melting-point inorganic binder, 1-15% of nano-alumina inorganic additive, and 20-40% of an organic phase. The low-melting-point inorganic binder slurry for the aluminum material can meet packaging and insulation requirements for the aluminum material as well as high requirements for printing precision, film quality and printing efficiency, can achieve low-temperature sealing, and has good dielectric insulation performance and construction performance. The preparation method comprises the following processing steps: a. preparing the organic phase; and b. preparing the low-melting-point inorganic binder slurry. Through the preparation method, the low-melting-point inorganic binder slurry for the aluminum material can be effectively produced and prepared.

Description

technical field [0001] The invention relates to the technical field of electronic materials, in particular to a low melting point inorganic binder slurry for an aluminum substrate and a preparation method thereof. Background technique [0002] The traditional casting process has very high requirements on the ceramic slurry. Due to the limitation of equipment precision, the thickness of the diaphragm is generally 10-20 μm. Thick film technology integrates electronic materials, multilayer wiring technology, surface micro-assembly and planar integration technology, and is widely used in various miniaturized and planarized electronic components. Thick film technology has a long history of application in electronic packaging technology and circuit applications, especially in the manufacture of military products and aerospace products with high reliability requirements and small batches. [0003] In order to make aluminum-based electronic devices work stably, it is necessary to u...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/29H01L21/48
CPCH01L21/4803H01L23/291H01L23/295
Inventor 刘建苏冠贤张晓飞
Owner DONGGUAN COREHELM ELECTRONICS MATERIAL TECH CO LTD
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