Method for manufacturing boron-containing diamond compact
A technology of boron diamond and composite sheet, which is applied in the field of preparation of superhard materials, can solve the problems of difficult to stabilize the quality of boron-containing diamond composite sheet, different degree of uniformity, and poor stability of boron-containing diamond, so as to improve comprehensive performance and anti-oxidation Sexual improvement, high density effect
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Embodiment 1
[0041] The binding agent that adopts in the present embodiment comprises following raw material components and parts by weight:
[0042] Co powder 97 parts by weight
[0043] TiC powder 2 parts by weight
[0044] 1 part by weight of Ni powder.
[0045] In this example:
[0046] In step 1), the concentration of the boric acid aqueous solution is 3%.
[0047] In step 1), the mass volume ratio of the diamond powder and the boric acid aqueous solution is 500g / L.
[0048] In step 2), the drying temperature is 200°C.
[0049] The mass ratio of diamond micropowder and binding agent is 1 in step 3).
[0050] In step 4), the cemented carbide substrate is WC-Co cemented carbide.
[0051] In step 4), the high temperature is 1400° C., and the high pressure is 7.5 MPa.
[0052] In this embodiment, the thickness of the boron-containing diamond layer is 0.5-1.5 mm; the thickness of the cemented carbide matrix layer is 5-10 mm.
Embodiment 2
[0054] The binding agent that adopts in the present embodiment comprises following raw material components and parts by weight:
[0055] Co powder 98 parts by weight
[0056] TiC powder 0.5 parts by weight
[0057] Ni powder 1.5 parts by weight.
[0058] In this example:
[0059] In step 1), the concentration of the boric acid aqueous solution is 10%.
[0060] In step 1), the mass volume ratio of the diamond powder to the boric acid aqueous solution is 600g / L.
[0061] In step 2), the drying temperature is 300°C.
[0062] The mass ratio of diamond micropowder and bonding agent is 2 in step 3).
[0063]In step 4), the cemented carbide substrate is WC-Co cemented carbide.
[0064] In step 4), the high temperature is 1500° C., and the high pressure is 6 MPa.
[0065] In this embodiment, the thickness of the boron-containing diamond layer is 0.5-2.5 mm; the thickness of the cemented carbide matrix layer is 5-10 mm.
Embodiment 3
[0067] The binding agent that adopts in the present embodiment comprises following raw material components and parts by weight:
[0068] Co powder 99 parts by weight
[0069] TiC powder 0.5 parts by weight
[0070] Ni powder 0.5 parts by weight.
[0071] In this example:
[0072] In step 1), the concentration of the boric acid aqueous solution is 15%.
[0073] In step 1), the mass volume ratio of the diamond powder to the boric acid aqueous solution is 700g / L.
[0074] In step 2), the drying temperature is 400°C.
[0075] The mass ratio of diamond micropowder and bonding agent is 3 in step 3).
[0076] In step 4), the cemented carbide substrate is WC-Co cemented carbide.
[0077] In step 4), the high temperature is 1600° C., and the high pressure is 7 MPa.
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