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Preparation method of large-particle-size low-viscosity silica solution for polishing sapphire

A technology with large particle size and low viscosity, which is applied in chemical instruments and methods, polishing compositions containing abrasives, and other chemical processes. It can solve problems such as high surface roughness, affecting product quality, and low production efficiency. High polishing efficiency, easy control of particle size, avoiding the effect of poor stability

Inactive Publication Date: 2017-05-31
福建三邦硅材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The common problems in the chemical mechanical polishing process are: low production efficiency due to low polishing rate, high surface roughness affecting product quality, etc., which need to be solved urgently

Method used

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  • Preparation method of large-particle-size low-viscosity silica solution for polishing sapphire
  • Preparation method of large-particle-size low-viscosity silica solution for polishing sapphire

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] A preparation method for sapphire polishing with large particle size and low viscosity silica sol, comprising the following steps:

[0023] (1) Take a certain amount of sodium hydroxide and join in water to make a 3wt% sodium hydroxide solution;

[0024] (2) adding 10 parts by weight of silicon powder to 24 parts by weight of water, and activating at 65°C for 30 minutes to obtain activated silicon powder;

[0025] (3) Add 0.8 parts by weight of dibenzofuran to 15 parts by weight of ethanol, stir and mix evenly, and heat to 45°C for 40 minutes to obtain a dibenzofuran solution;

[0026] (4) In 20 parts by weight of water, add 4 parts by weight of glycerol, stir and mix evenly, and heat to 70°C, then slowly add the activated silicon powder and the dibenzofuran solution, supplemented with 50KHz ultrasonic treatment, and dropwise adding the sodium hydroxide solution, the dropping speed and the dropping amount of the sodium hydroxide solution are based on maintaining the pH...

Embodiment 2

[0029] A preparation method for sapphire polishing with large particle size and low viscosity silica sol, comprising the following steps:

[0030] (1) Take a certain amount of sodium hydroxide and join in water to make a 3wt% sodium hydroxide solution;

[0031] (2) adding 10 parts by weight of silicon powder to 24 parts by weight of water, and activating at 65°C for 30 minutes to obtain activated silicon powder;

[0032] (3) Add 0.8 parts by weight of dibenzofuran to 15 parts by weight of ethanol, stir and mix evenly, and heat to 45°C for 40 minutes to obtain a dibenzofuran solution;

[0033] (4) In 20 parts by weight of water, add 4 parts by weight of glycerol, stir and mix evenly, and heat to 70°C, then slowly add the activated silicon powder and the dibenzofuran solution, and add dropwise The sodium hydroxide solution, the rate of addition and the amount of addition of the sodium hydroxide solution are based on maintaining the pH of the reaction system to be 9 to 10;

[0...

Embodiment 3

[0036] A preparation method for sapphire polishing with large particle size and low viscosity silica sol, comprising the following steps:

[0037] (1) Take a certain amount of sodium hydroxide and join in water to make 4wt% sodium hydroxide solution;

[0038] (2) adding 10 parts by weight of silicon powder to 21 parts by weight of water, and activating at 68°C for 20 minutes to obtain activated silicon powder;

[0039] (3) Add 1 part by weight of dibenzofuran into 15 parts by weight of ethanol, stir and mix evenly, and heat to 40°C for 30 minutes to obtain a dibenzofuran solution;

[0040] (4) In 20 parts by weight of water, add 5 parts by weight of glycerol, stir and mix evenly, and heat to 60°C, then slowly add the activated silicon powder and the dibenzofuran solution, and dropwise The sodium hydroxide solution, the rate of addition and the amount of addition of the sodium hydroxide solution are based on maintaining the pH of the reaction system to be 9 to 10;

[0041] (5...

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Abstract

The invention belongs to the technical field of hard material polishing, and concretely relates to a preparation method of a large-particle-size low-viscosity silica solution for polishing sapphire. The method comprises the following steps of (1) preparing a sodium hydroxide solution; (2) preparing activated silica powder; (3) preparing a dibenzofuran solution; (4) in water, adding glycerol, then slowly adding the activated silica powder and the dibenzofuran solution, and meanwhile, dropwise adding the sodium hydroxide solution; (5) after feeding the materials, continuously reacting, performing vacuum suction filtration after natural cooling, and obtaining the large-particle-size low-viscosity silica solution. The silica solution obtained through the invention has large grain size, the grinding effect of the silica solution on the sapphire can be remarkably improved, the polishing efficiency is improved, the silica solution is low in viscosity and difficult to agglomerate, the surface damage and the roughness of the sapphire are reduced, and the surface quality of the sapphire is ensured.

Description

technical field [0001] The invention belongs to the technical field of hard material polishing, and in particular relates to a preparation method of large-particle-diameter and low-viscosity silica sol for sapphire polishing. Background technique [0002] Sapphire, the main component is Al 2 o 3 , is a multifunctional oxide crystal with excellent optical, physical and chemical properties. Compared with other natural gemstones, sapphire has the characteristics of high hardness, high melting point, good light transmission, excellent thermal conductivity and electrical insulation, good wear resistance and stable corrosion resistance, so it is widely used in optoelectronics, communications, Defense and other fields. In the field of optoelectronics, sapphire is often used as a substrate material for LEDs because of its good high temperature stability and mechanical properties, and the surface quality of sapphire materials has a very important impact on the performance and qual...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02C09K3/14
CPCC09G1/02C09K3/1463
Inventor 朱华建洪坤土
Owner 福建三邦硅材料有限公司
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