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Halogen self-doped bismuth oxyhalide semiconductor nano luminescent material

A nano-luminescent material, bismuth oxyhalide technology, applied in the directions of luminescent materials, nano-optics, nano-technology, etc., can solve the problems of complex process, reduced particle morphology and size, low luminous efficiency, etc., and achieves the effect of a simple preparation method

Active Publication Date: 2017-05-31
KUNMING UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The purpose of the present invention is to propose a halogen self-doped bismuth oxyhalide semiconductor activated by rare earth ions in view of the shortcomings of the existing rare earth doped bismuth oxyhalide semiconductor nanomaterials with low luminous efficiency and conventional rare earth doped nanocrystal luminescence enhancement methods. Nano-luminescent materials; this material utilizes the design and synthesis of halogen atoms beyond the conventional stoichiometric ratio in bismuth oxyhalide crystals to realize the self-doping behavior of halogen ions; different from ordinary semiconductors and crystals, bismuth oxyhalides have a two-dimensional layered Crystal structure, this two-dimensional structure can form a strong polarized electric field inside the atomic layer, and can also accommodate excess halogen ions to achieve high-concentration self-doping behavior; when halogen ions are self-doped in the bismuth oxyhalide layered structure , on the one hand, it can further reduce the particle morphology and size, and at the same time, it can also increase the interlayer excitation electric field of the two-dimensional atomic layer; this material can use the local field enhancement effect of its own internal electric field formed by self-doping to improve the Ion Luminescence Efficiency

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  • Halogen self-doped bismuth oxyhalide semiconductor nano luminescent material

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Embodiment 1

[0029] Embodiment 1: The halogen self-doped bismuth oxyhalide semiconductor nano-luminescent material activated by the rare earth ion, its chemical formula can be Bi 0.99 Er 0.01 OCl 1.2 , where x= 0.01, y=1.2;

[0030] The preparation method of above-mentioned material is as follows:

[0031] (1) According to the molar ratio of Bi ion: Er ion: Cl ion = 0.99: 0.01: 1.8, with Bi(NO 3 ) 3 ·5H 2 O, Er 2 (NO 3 ) 3 , NH 4 Cl is used as a raw material to weigh the drug, dissolved in ethylene glycol solvent, and stirred evenly; since self-doping requires excessive Cl, the actual NH 4 The dosage ratio of Cl is 1.8, which is greater than the target component;

[0032] (2) Adjust the pH value to 6 with 0.5mol / L ammonia water, stir for 0.5h, then transfer to a hydrothermal kettle with a polytetrafluoroethylene liner, the filling degree is 0.8, then raise the temperature to 160°C, and keep warm for 12 Hour;

[0033] (3) The material obtained in step (2) was washed three times ...

Embodiment 2

[0034] Embodiment 2: The halogen self-doped bismuth oxyhalide semiconductor nano-luminescent material activated by the rare earth ion, its chemical formula can be Bi 0.99 Re 0.01 OCl 2 , wherein, Re is Er, x=0.01, y=2;

[0035] The preparation method of above-mentioned material is as follows:

[0036] (1) According to the molar ratio of Bi ion: Er ion: Cl ion = 0.99: 0.01: 3, Bi(NO 3 ) 3 ·5H 2 O, Er(NO 3 ), NH 4 Cl is used as a raw material to weigh the drug, dissolved in ethylene glycol solvent, and stirred evenly; since self-doping requires excessive Cl, the actual NH 4 The dosage ratio of Cl is 3, which is greater than the target component;

[0037] (2) Adjust the pH value to 4 with ammonia water at a concentration of 1mol / L, stir for 1 hour, then transfer to a hydrothermal kettle with a polytetrafluoroethylene liner, the filling degree is 0.8, then raise the temperature to 200°C, and keep it warm for 5 hours;

[0038] (3) The material obtained in step (2) was wash...

Embodiment 3

[0039] Embodiment 3: The halogen self-doped bismuth oxyhalide semiconductor nano-luminescent material activated by the rare earth ion, its chemical formula can be Bi 0.99 Eu 0.01 OCl 4 , where x= 0.01, y=4;

[0040] The preparation method of above-mentioned material is as follows:

[0041] (1) According to the molar ratio of Bi ion:Eu ion:Cl ion=0.99︰0.01︰6, with Bi(NO 3 ) 3 ·5H 2 O, Eu (NO 3 ) 3 , NH 4 Cl is used as raw material, dissolved in ethylene glycol solvent, and stirred evenly; since self-doping requires excess Cl, the actual NH 4 The dosage ratio of Cl is 6, which is greater than the target component;

[0042] (2) Adjust the pH value to 6 with a sodium hydroxide solution with a concentration of 1mol / L, stir for 2 hours, then transfer to a hydrothermal kettle with a polytetrafluoroethylene liner, the filling degree is 0.8, and then heat up to 100°C, Keep warm for 15 hours;

[0043] (3) The material obtained in step (2) was washed three times with deionized...

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Abstract

The invention discloses a halogen self-doped bismuth oxyhalide semiconductor nano luminescent material. According to the material, the luminous efficiency of halogen ion self-doped enhanced rare-earth ions is utilized and a chemical formula of the material is Bi1-xRexOMy, wherein x is equal to 0.0025 to 0.1, y is equal to 1.2 to 4, Re is one or more of Tb, Ce, Nd, Dy, Sm, Pr, Lu, Eu, Tm, Yb, Gd, Ho, Er and La and M is one of Cl, Br and I; an interlayer electric field of two-dimensional atom layers is improved through a self-doping behavior of halogen ions in a bismuth oxyhalide semiconductor, and the luminescent efficiency of the rare-earth ions is enhanced; a preparation method of the material is low in cost, simple in process, moderate in condition and low in energy, does not need complicated equipment and has industrial and market application and popularization prospect.

Description

technical field [0001] The invention relates to a halogen self-doped bismuth oxyhalide semiconductor nano-luminescent material activated by rare earth ions, in particular to a material which further reduces particle size on the nanometer scale and improves luminous efficiency. Background technique [0002] Due to their unique electronic structure, semiconductor materials are widely used in the fields of microelectronics and optoelectronics as the material basis for manufacturing semiconductor devices. On the other hand, the unique 4f electronic configuration of rare earth elements makes them have complex and rich energy level structures and spectral characteristics. Doping rare earth elements into semiconductor materials by appropriate methods will inevitably produce many new functional properties. In recent years, rare earth-doped semiconductor materials have attracted extensive attention due to their promising applications in optoelectronic devices, solid-state laser mater...

Claims

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Application Information

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IPC IPC(8): C09K11/74B82Y20/00B82Y30/00B82Y40/00
CPCC09K11/7701C09K11/7732C09K11/776C09K11/777B82Y20/00B82Y30/00B82Y40/00
Inventor 宋志国徐祖元胡锐张相周邱建备杨正文尹兆益
Owner KUNMING UNIV OF SCI & TECH