Physical vapor deposition (PVD) cavity structure for improving sheet resistance uniformity of metal oxide thin film

Abstract

The invention provides a physical vapor deposition (PVD) cavity structure for improving the sheet resistance uniformity of a metal oxide thin film. The PVD cavity structure comprises a cavity, a driving device, a magnetic part, a target material, an upper baffle, a lower baffle, a wafer and the like. The upper baffle is in an inverted conical barrel shape, the outer edge of the upper baffle is erected on an opening of the cavity, and the bottom end of the upper baffle is lower than the upper surface of a base pressing ring. The cavity is provided with an oxygen inlet, a gas inlet ring is installed at the oxygen inlet and is divided into an outer ring body and an inner ring body, the outer ring body is provided with a gas inlet, two gas outlets are separated, two separated branches of holes are connected with the inner ring body, and the holes of the inner ring are symmetrically distributed. According to the cavity structure, gas cannot be immediately pumped away from the gap between the upper baffle and the lower baffle after entering the cavity, gas flow generates a vector in the direction toward the center in the gas pumping process, and the reactant gas concentration at the center of the wafer is improved; and due to the fact that mixed gas feeding is changed into independent gas feeding, gas flow distribution is uniform, dispersivity is good, the oxygen inlet and the argon inlet are separated, oxygen can be better stirred by argon, and oxygen distribution is more uniform.

Description

technical field [0001] The present invention relates to [0002] The technical field, in particular, relates to a PVD cavity structure for improving the square resistance uniformity of a metal oxide film. Background technique [0003] Physical vapor deposition (physical vapor deposition, PVD) technology is widely used in the field of semiconductors, and the method includes vacuum evaporation, sputtering coating, molecular beam epitaxy, and the like. Metal thin film materials in MEMS manufacturing are mostly prepared by PVD sputtering. In PVD technology, a PVD chamber is usually used for thin film deposition. In thin film deposition, magnetron sputtering (magnetic component ron Sputtering) technology is used for the deposition of metal thin films to form metal contacts and metal interconnections. In a vacuum environment, magnetron sputtering bombards the target (target) with ionized inert gas ions through the joint action of voltage and magnetic field, causing the target t...

AI Technical Summary

Problems solved by technology

[0007] The disadvantage of the prior art is that the square resistance uniformity of the metal oxide is poor, and the uniformity is greater than 20%.

Images