Copper etching liquid with little lateral etching

Abstract

The invention belongs to the technical field of semiconductor machining and relates to copper etching liquid with little lateral etching. According to a formula, the copper etching liquid comprises 1-15 wt% of hydrogen peroxide, 1-25 wt% of inorganic acid, 1-20 wt% of organic acid, 1-30 wt% of salts, 0.5-2 wt% of a surface active agent and the balance deionized water. The surface active agent is one of polydimethylsiloxane, methoxypolyethylene glycol, polyoxyethylene polyoxypropylene, polyoxyethylene poly(propylene oxide alkyl ether) and tetramethyl decynediol. The copper etching liquid is even in etching, the lateral etching phenomenon is reduced, foam is avoided, and the stability is good.

Description

technical field [0001] The invention relates to the technical field of semiconductor processing, in particular to a copper etchant with small side erosion. Background technique [0002] Etching is the chemical removal of unwanted metal to a certain depth. Etching technology is widely used in decoration, circuit boards, precision machining and electronic parts processing and other fields. [0003] At the beginning of etching, the surface of the metal plate is protected by graphics, and the rest of the metal surface is in contact with the etching solution. At this time, the etching proceeds vertically to the depth. When the metal surface is etched to a certain depth, new metal surfaces appear on both sides of the bare, and at this time, the etchant not only etches in the vertical direction but also on both sides. As the etching depth increases, the etched area of ​​the metal surfaces on both sides also increases. The final result of side erosion is that the lines or dots of...

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Problems solved by technology

[0004] At present, most metal copper etching solutions on the market have problems such as large side erosion, formation of a large amount of foam, or poor stability.

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