LED epitaxial wafer grown on glass substrate and preparation method thereof

Abstract

The invention discloses an epitaxial wafer growing on a glass substrate. The epitaxial wafer comprises an aluminum metal layer growing on the glass substrate, a silver metal layer growing on the aluminum metal layer, an AlN buffer layer growing on the silver metal layer, a GaN buffer layer growing on the AlN buffer layer, a non-doped GaN layer growing on the GaN buffer layer, an n-type doped GaN film growing on the non-doped GaN buffer layer, an InGaN / GaN multiple-quantum trap growing on the n-type doped GaN film and a p-type doped GaN film growing on the InGaN / GaN multiple-quantum trap. The invention further discloses a preparation method of the LED epitaxial wafer growing on the glass substrate. The LED epitaxial wafer growing on the glass substrate has the advantages of low defect density, good crystallization quality and excellent light emitting performance.

Description

technical field [0001] The invention relates to an LED epitaxial wafer and a preparation method thereof, in particular to an LED epitaxial wafer grown on a glass substrate and a preparation method thereof. Background technique [0002] Light-emitting diode (LED), as a new type of solid-state lighting source and green light source, has outstanding features such as small size, low power consumption, environmental protection, long service life, high brightness, low heat and colorful, and is widely used in outdoor lighting, commercial lighting and decoration Engineering and other fields have a wide range of applications. At present, under the background of the increasingly serious problem of global warming, saving energy and reducing greenhouse gas emissions has become an important issue faced by the whole world. A low-carbon economy based on low energy consumption, low pollution, and low emissions will become an important direction of economic development. In the field of lig...

AI Technical Summary

Problems solved by technology

Although the luminous efficiency of LED has surpassed that of fluorescent lamps and incandescent lamps, the luminous efficiency of commercial LEDs is still lower than that of sodium lamps (150lm / W), and the price per lumen / watt is relatively high.

At present, most GaN-based LEDs are based on epitaxial growth on sapphire and SiC substrates. Large-scale sapphire and SiC substrates are expensive, resulting in high LED manufacturing costs.

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