Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of structure-controllable CdS nanometer materials

A technology of nanomaterials and reactors, which is applied in the field of preparation of CdS nanomaterials, can solve problems that are rarely reported, and achieve the effects of good repeatability, strong photocatalytic activity, and high success rate

Inactive Publication Date: 2017-06-13
SOUTHWEAT UNIV OF SCI & TECH
View PDF14 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Although the various product structures mentioned above have been obtained in the solution method, and the dimensions of the various shapes of the products are all controlled in the nanometer and micrometer ranges, the complex structures (for example, two-branched, four-branched) of synthetic CdS crystals , multi-branched CdS nanostructures, etc.) are rarely reported

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of structure-controllable CdS nanometer materials
  • Preparation method of structure-controllable CdS nanometer materials
  • Preparation method of structure-controllable CdS nanometer materials

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0033] The preparation method of the CdS nanomaterial with controllable structure of the present invention specifically comprises the following steps:

[0034] Step (1), Cd(Ac) 2H 2 O and R 1 NHCSNHR 2 Added to the liner of the reactor, where Cd(Ac)·2H 2 O and R 1 NHCSNHR2 The molar ratio is 1:1~10. And as long as there is a corresponding container, it can be prepared in large quantities;

[0035] Step (2), add the mixed binary system solution of diethylenetriamine DETA and deionized water into the inner tank of the reactor, and the mixed binary system solution of diethylenetriamine DETA and deionized water added to the inner tank of the reactor The volume of the system solution accounts for 75% to 85% of the inner tank volume of the reactor. The volume ratio of diethylenetriamine DETA to deionized water is 50:1~1:10.

[0036] Satisfied: 1~6mmol of Cd(Ac)·2H is added to every 100mm of the mixed binary system solution of diethylenetriamine DETA and deionized water 2 O. ...

Embodiment 1

[0041] One-step synthesis of CdS nanomaterials by solvothermal method, firstly take 1 mmol of Cd(Ac) 2H 2 O and NH 2 CSNHCH 3 Add it into the inner tank of the reaction kettle, the volume of the inner tank is 50mL, take the mixed binary system solution of diethylenetriamine (DETA) and deionized water in different proportions, and add it to the inner tank, the volume added is to fill the inner tank 80% of the volume, the ratio of diethylenetriamine (DETA) to deionized water is: (a) 33:4; (b) 7:1; (c) 1:1; (d) 2:5; ( d) 1:7; put the reaction kettle into an oven and react at 180°C for 12 hours, then take it out and cool it down to room temperature naturally; the obtained product is centrifuged, washed with distilled water and absolute ethanol, the centrifugation rate is 6000r / min, and the centrifugation time is 5min , distilled water and absolute ethanol were washed 3 to 5 times each; the cleaned product was vacuum-dried at 60° C. for 6 hours to obtain CdS nanomaterials. R in ...

Embodiment 2

[0050] One-step synthesis of CdS nanomaterials by solvothermal method, firstly take 2 mmol of Cd(Ac) 2H 2 O and NH 2 CSNH (NO 2 ) into the inner tank of the reaction kettle, the volume of the inner tank is 50mL, and the mixed binary system solution of diethylenetriamine (DETA) and deionized water in different proportions is added to the inner tank, and the added volume is filled to the inner tank 80% of the gallbladder volume, the ratio of diethylenetriamine (DETA) to deionized water is: (a) 33:4; (b) 7:1; (c) 1:1; (d) 2:5; (d) 1:7; put the reaction kettle into an oven and react at 180°C for 12 hours, then take it out and cool it down to room temperature naturally; the obtained product is centrifuged, washed with distilled water and absolute ethanol, and the centrifugation rate is 8000r / min, and the centrifugation time is After 10 minutes, wash with distilled water and absolute ethanol for 3 to 5 times respectively; the cleaned product was vacuum-dried at 60° C. for 10 hours...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a preparation method of structure-controllable CdS nanometer materials. According to the method, Cd(Ac) 2H2O and R1NHCSNHR2 are used as reactants; DETA and DIW two-ingredient solution in different proportion ratio are used as a growth solvent system; solvent heat reaction is performed to obtain the CdS nanometer material with different appearances. The preparation method provided by the invention is mild; the operation is simple and convenient; the success rate is high; the repeatability is high; the product purity is high; the mass preparation can be realized. The novel structure CdS nanometer materials grow through the DETA and DIW two-ingredient solution; the flower-shaped, line-shaped and tree-shaped structures are respectively realized; in addition, the CdS nanometer materials have strong optical catalysis activity, and can be applied to catalytic degradation of organic pollutants.

Description

technical field [0001] The invention belongs to the technical field of nanomaterial preparation and relates to a preparation method of a CdS nanometer material with controllable structure. Background technique [0002] As a very important and typical semiconductor material among II-VI semiconductor materials, CdS has been extensively and intensively studied in the past few decades. CdS is a semiconductor material with a direct band gap, and its band gap emission energy is 2.4eV at room temperature. It has been widely used in photoelectric conversion in solar cells, light-emitting diodes in flat panel display systems, and other materials based on its nonlinear characteristics. manufactured optics. In the past few years, a lot of research work has focused on controlling the size and morphology of CdS nanocrystals, and many new methods have been developed to prepare CdS-based structures, especially one-dimensional CdS nano- and micro-structures. For example, Lieber's group ha...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01G11/02B82Y40/00B01J27/04
CPCC01G11/02B01J27/04B82Y40/00C01P2002/72C01P2002/84C01P2004/03C01P2004/04C01P2006/80
Inventor 姚卫棠陈鑫段涛竹文坤张友魁
Owner SOUTHWEAT UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com